公开(公告)号：US20200111797A1

公开(公告)日：2020-04-09

申请号：US16150412

申请日：2018-10-03

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  G11C11/402 ,  H01L23/538 ,  H01L23/49

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US20220344350A1

公开(公告)日：2022-10-27

申请号：US17862659

申请日：2022-07-12

Applicant: Micron Technology, Inc.

Inventor： Hong Li ,  Ramaswamy Ishwar Venkatanarayanan ,  Sanh D. Tang ,  Erica L. Poelstra

IPC: H01L27/108 ,  H01L23/49 ,  H01L23/538 ,  G11C11/402 ,  H01L29/78 ,  H01L29/66

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

公开(公告)号：US10998440B2

公开(公告)日：2021-05-04

申请号：US16596407

申请日：2019-10-08

Applicant: Micron Technology, Inc.

Inventor： Kamal M. Karda ,  Ramanathan Gandhi ,  Hong Li ,  Haitao Liu ,  Durai Vishak Nirmal Ramaswamy ,  Sanh D. Tang ,  Scott E. Sills

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

Abstract: A device comprises a vertical transistor. The vertical transistor comprises a semiconductive pillar, at least one gate electrode, a gate dielectric material, and void spaces. The semiconductive pillar comprises a source region, a drain region, and a channel region extending vertically between the source region and the drain region, the channel region comprising a semiconductive material having a band gap greater than 1.65 electronvolts. The at least one gate electrode laterally neighbors the semiconductive pillar. The gate dielectric material is laterally between the semiconductive pillar and the at least one gate electrode. The void spaces are vertically adjacent the gate dielectric material and laterally intervening between the at least one gate electrode and each of the source region and the drain region of the semiconductive pillar. Related electronic systems and methods are also disclosed.

公开(公告)号：US20200235103A1

公开(公告)日：2020-07-23

申请号：US16831355

申请日：2020-03-26

Applicant: Micron Technology, Inc.

Inventor： Amirhasan Nourbakhsh ,  John K. Zahurak ,  Sanh D. Tang ,  Silvia Borsari ,  Hong Li

IPC: H01L27/108 ,  H01L29/66 ,  H01L29/78

Abstract: Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20200052113A1

公开(公告)日：2020-02-13

申请号：US16596423

申请日：2019-10-08

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762 ,  H01L23/49

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20190198668A1

公开(公告)日：2019-06-27

申请号：US15976720

申请日：2018-05-10

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L29/66

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20250142875A1

公开(公告)日：2025-05-01

申请号：US19011229

申请日：2025-01-06

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H10D30/63 ,  H01L21/02 ,  H01L21/308 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/764 ,  H01L23/49 ,  H01L23/528 ,  H10B12/00 ,  H10B63/00 ,  H10D30/01 ,  H10D62/10 ,  H10D62/17 ,  H10D84/01 ,  H10D84/03

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US11024735B2

公开(公告)日：2021-06-01

申请号：US16596423

申请日：2019-10-08

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762 ,  H01L23/49 ,  H01L21/764

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.

公开(公告)号：US20210098463A1

公开(公告)日：2021-04-01

申请号：US17119129

申请日：2020-12-11

Applicant: Micron Technology, Inc.

Inventor： Amirhasan Nourbakhsh ,  John K. Zahurak ,  Sanh D. Tang ,  Silvia Borsari ,  Hong Li

IPC: H01L27/108 ,  H01L29/78 ,  H01L29/66

Abstract: Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US10461185B2

公开(公告)日：2019-10-29

申请号：US15976720

申请日：2018-05-10

Applicant: Micron Technology, Inc.

Inventor： Sanh D. Tang ,  Hong Li ,  Erica L. Poelstra

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/10 ,  H01L23/528 ,  H01L29/06 ,  H01L21/308 ,  H01L21/311 ,  H01L27/108 ,  H01L27/24 ,  H01L21/762

Abstract: Some embodiments include an assembly having pillars of semiconductor material arranged in rows extending along a first direction. The rows include spacing regions between the pillars. The rows are spaced from one another by gap regions. Two conductive structures are within each of the gap regions and are spaced apart from one another by a separating region. The separating region has a floor section with an undulating surface that extends across semiconductor segments and insulative segments. The semiconductor segments have upper surfaces which are above upper surfaces of the insulative segments; Transistors include channel regions within the pillars of semiconductor material, and include gates within the conductive structures. Some embodiments include methods for forming integrated circuitry.