公开(公告)号：US20200350226A1

公开(公告)日：2020-11-05

申请号：US16400956

申请日：2019-05-01

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  David Ross Economy ,  Yongjun J. Hu ,  Kent H. Zhuang ,  Robert K. Grubbs

IPC: H01L23/373 ,  H01L23/535 ,  H01L21/02 ,  H01L21/768

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.

公开(公告)号：US20240268240A1

公开(公告)日：2024-08-08

申请号：US18634079

申请日：2024-04-12

Applicant: Micron Technology, Inc.

Inventor： Farrell M. Good ,  Robert K. Grubbs ,  Gurpreet S. Lugani

IPC: H10N70/00

CPC classification number: H10N70/063 ,  H10N70/826 ,  H10N70/882

Abstract: Techniques are described to form a liner to protect a material, such as a storage element material, from damage during subsequent operations or phases of a manufacturing process. The liner may be bonded to the material (e.g., a chalcogenide material) using a strong bond or a weak bond. In some cases, a sealant material may be deposited during an etching phase of the manufacturing process to prevent subsequent etching operations from damaging a material that has just been etched.

公开(公告)号：US20230023105A1

公开(公告)日：2023-01-26

申请号：US17881285

申请日：2022-08-04

Applicant: Micron Technology, Inc.

Inventor： Farrell M. Good ,  Robert K. Grubbs ,  Gurpreet S. Lugani

IPC: H01L45/00

Abstract: Techniques are described to form a liner to protect a material, such as a storage element material, from damage during subsequent operations or phases of a manufacturing process. The liner may be bonded to the material (e.g., a chalcogenide material) using a strong bond or a weak bond. In some cases, a sealant material may be deposited during an etching phase of the manufacturing process to prevent subsequent etching operations from damaging a material that has just been etched.

公开(公告)号：US11551926B2

公开(公告)日：2023-01-10

申请号：US17248376

申请日：2021-01-22

Applicant: Micron Technology, Inc.

Inventor： Farrell M. Good ,  Robert K. Grubbs

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/50 ,  C23C16/448

Abstract: A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.

公开(公告)号：US11417840B2

公开(公告)日：2022-08-16

申请号：US16731963

申请日：2019-12-31

Applicant: Micron Technology, Inc.

Inventor： Farrell M. Good ,  Robert K. Grubbs ,  Gurpreet S. Lugani

IPC: H01L45/00

Abstract: Techniques are described to form a liner to protect a material, such as a storage element material, from damage during subsequent operations or phases of a manufacturing process. The liner may be bonded to the material (e.g., a chalcogenide material) using a strong bond or a weak bond. In some cases, a sealant material may be deposited during an etching phase of the manufacturing process to prevent subsequent etching operations from damaging a material that has just been etched.