公开(公告)号：US20210202246A1

公开(公告)日：2021-07-01

申请号：US16729903

申请日：2019-12-30

Applicant: Micron Technology, Inc.

Inventor： Santanu Sarkar ,  Jerome A. Imonigie ,  Kent H. Zhuang ,  Josiah Jebaraj Johnley Muthuraj ,  Janos Fucsko ,  Benjamin E. Greenwood ,  Farrell M. Good

IPC: H01L21/02 ,  H01L21/762

Abstract: Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a structural material for a semiconductor device. The structural material includes an orthosilicate derived oligomer having a number of oxygen (O) atoms each chemically bonded to one of a corresponding number of silicon (Si) atoms and a chemical bond formed between an element from group 13 of a periodic table of elements (e.g., B, Al, Ga, In, and Tl) and the number of O atoms of the orthosilicate derived oligomer. The chemical bond crosslinks chains of the orthosilicate derived oligomer to increase mechanical strength of the structural material, relative to the structural material formed without the chemical bond to crosslink the chains, among other benefits described herein.

公开(公告)号：US20220020662A1

公开(公告)日：2022-01-20

申请号：US17492185

申请日：2021-10-01

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  David Ross Economy ,  Yongjun J. Hu ,  Kent H. Zhuang ,  Robert K. Grubbs

IPC: H01L23/373 ,  H01L23/535 ,  H01L21/768 ,  H01L21/02

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.

公开(公告)号：US11984382B2

公开(公告)日：2024-05-14

申请号：US17492185

申请日：2021-10-01

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  David Ross Economy ,  Yongjun J. Hu ,  Kent H. Zhuang ,  Robert K. Grubbs

IPC: H01L23/373 ,  H01L21/02 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/3736 ,  H01L21/02186 ,  H01L21/0234 ,  H01L21/768 ,  H01L23/535

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.

公开(公告)号：US20240347418A1

公开(公告)日：2024-10-17

申请号：US18640682

申请日：2024-04-19

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  David Ross Economy ,  Yongjun J. Hu ,  Kent H. Zhuang ,  Robert K. Grubbs

IPC: H01L23/373 ,  H01L21/02 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/3736 ,  H01L21/02186 ,  H01L21/0234 ,  H01L21/768 ,  H01L23/535

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.

公开(公告)号：US11158561B2

公开(公告)日：2021-10-26

申请号：US16400956

申请日：2019-05-01

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  David Ross Economy ,  Yongjun J. Hu ,  Kent H. Zhuang ,  Robert K. Grubbs

IPC: H01L23/373 ,  H01L23/535 ,  H01L21/768 ,  H01L21/02

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.

公开(公告)号：US20200350226A1

公开(公告)日：2020-11-05

申请号：US16400956

申请日：2019-05-01

Applicant: Micron Technology, Inc.

Inventor： Pengyuan Zheng ,  David Ross Economy ,  Yongjun J. Hu ,  Kent H. Zhuang ,  Robert K. Grubbs

IPC: H01L23/373 ,  H01L23/535 ,  H01L21/02 ,  H01L21/768

Abstract: Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.