ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED METHODS AND SYSTEMS

    公开(公告)号:US20210126193A1

    公开(公告)日:2021-04-29

    申请号:US16665679

    申请日:2019-10-28

    Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

    METHODS OF FORMING ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS

    公开(公告)号:US20220376176A1

    公开(公告)日:2022-11-24

    申请号:US17818313

    申请日:2022-08-08

    Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

    Electronic devices comprising metal oxide materials and related methods and systems

    公开(公告)号:US11444243B2

    公开(公告)日:2022-09-13

    申请号:US16665679

    申请日:2019-10-28

    Abstract: An electronic device comprising a stack structure comprising one or more stacks of materials and a metal oxide material adjacent to the stacks of materials. The materials of the stacks comprise one or more chalcogenide materials. The metal oxide material comprises aluminum oxide, aluminum silicate, hafnium oxide, hafnium silicate, zirconium oxide, zirconium silicate, or a combination thereof and the metal oxide material extends continuously from an upper portion of the one or more stacks of materials to a lower portion of the one or more stacks of materials. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

    METHODS OF FORMING A MICROELECTRONIC DEVICE, AND RELATED SYSTEMS AND ADDITIONAL METHODS

    公开(公告)号:US20220238324A1

    公开(公告)日:2022-07-28

    申请号:US17248376

    申请日:2021-01-22

    Abstract: A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.

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