公开(公告)号：US20200266071A1

公开(公告)日：2020-08-20

申请号：US16847902

申请日：2020-04-14

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kyle B. Campbell ,  Mario J. Di Cino ,  Aaron W. Freese ,  Alex Kogan ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311 ,  G11C11/22 ,  H01L21/027

Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

公开(公告)号：US20200035498A1

公开(公告)日：2020-01-30

申请号：US16043869

申请日：2018-07-24

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kyle B. Campbell ,  Mario J. Di Cino ,  Aaron W. Freese ,  Alex Kogan ,  Kevin R. Shea

IPC: H01L21/308 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  G11C11/22

Abstract: A method of forming an array comprising using two different composition masking materials in forming a pattern of spaced repeating first features of substantially same size and substantially same shape relative one another. A pattern-interrupting second feature of at least one of different size or different shape compared to that of the first features is within and interrupts the pattern of first features. The pattern of the first features with the pattern-interrupting second feature are translated into lower substrate material that is below the first features and the pattern-interrupting second feature. Material of the first features and of the pattern-interrupting second feature that is above the lower substrate material is removed at least one of during or after the translating. After the removing, the pattern-interrupting second feature in the lower substrate material is used as a reference location to reckon which of the two different composition masking materials was used to make first spaces between the first features in an analysis area in the material that was above the lower substrate material or which of the two different composition masking materials was used to make second spaces between the first features in the analysis area that alternate with the first spaces. Structure independent of method is disclosed.

公开(公告)号：US09196673B2

公开(公告)日：2015-11-24

申请号：US14147895

申请日：2014-01-06

Applicant: Micron Technology, Inc.

Inventor： Gurpreet Lugani ,  Kevin J. Torek

IPC: H01L21/20 ,  H01L21/302 ,  H01L21/461 ,  H01L49/02 ,  H01L27/108 ,  H01L21/311

CPC classification number: H01L27/10852 ,  H01G4/005 ,  H01G4/008 ,  H01G4/06 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/10894 ,  H01L28/40 ,  H01L28/60 ,  H01L28/75 ,  H01L28/91

Abstract: A method of forming capacitors includes providing first capacitor electrodes within support material. The first capacitor electrodes contain TiN and the support material contains polysilicon. The polysilicon-containing support material is dry isotropically etched selectively relative to the TiN-containing first capacitor electrodes using a sulfur and fluorine-containing etching chemistry. A capacitor dielectric is formed over sidewalls of the first capacitor electrodes and a second capacitor electrode is formed over the capacitor dielectric. Additional methods are disclosed.

Abstract translation: 形成电容器的方法包括在支撑材料内提供第一电容器电极。 第一电容器电极含有TiN，载体材料含有多晶硅。 使用含硫和含氟蚀刻化学法，相对于含TiN的第一电容器电极，选择性地对含多晶硅的支撑材料进行干式各向异性蚀刻。 在第一电容器电极的侧壁上形成电容器电介质，并且在电容器电介质上形成第二电容器电极。 公开了另外的方法。