摘要:
In a method of dicing a wafer, which comprises a plurality of individual circuit structures, a trench is first defined between at least two circuit structures on one face of the wafer. Subsequently, the trench is deepened down to a defined depth. Following this, one face of the wafer has fixed thereto a re-detachable intermediate support composed of a fixed intermediate support substrate and an adhesive medium which is applied to said intermediate support substrate and which can specifically be modified in terms of its adhesive strength, whereupon the wafer is dry-etched from the opposite face so that circuit chips are obtained which are connected to one another only via the intermediate support. Subsequently, the circuit chips are removed from the intermediate support. This method substantially reduces mechanical impairments that may occur during dicing of the circuit chips; on the one hand, this permits the production of circuit chips with a thickness of less than 50 &mgr;m and, on the other hand, it leads to mechanically substantially undamaged circuit chips.
摘要:
In a method for vertically integrating active circuit planes, a first substrate having at least one integrated circuit in a first main surface thereof and further having connecting areas for the integrated circuit as well as outer connecting areas on the first main surface is provided in a first step. A second substrate having at least one integrated circuit in a first main surface thereof and further having connecting areas for the integrated circuit as well as open or openable areas on the first main surface is provided. The first main surfaces of the first and second substrates are joined in such a way that the connecting areas of the first substrate are connected to those of the second substrate in an electrically conductive manner in such a way that the outer connecting areas of the first substrate are in alignment with the open or openable areas of the second substrate. Subsequently, the second substrate is thinned and the outer connecting areas are exposed through the open or openable areas. The resultant chips can be further processed making use of standard methods.
摘要:
In a method for contacting a circuit chip containing an integrated circuit of a thickness less than 50 &mgr;m, which has at least two pads on a first main surface, the circuit chip is first of all placed onto a main surface of a support substrate with a second main surface which faces this first main surface, in such a way that the entire thickness of the circuit chip protrudes from the surface of the support substrate. A structured metallic coating is then applied to the first main surface of the circuit chip and the surface of the support substrate by means of screen printing or stamping, in order to connect the pads of the circuit chip to a conductor structure located on the main surface of the support substrate. Alternatively, the screen printing or stamping process is used to apply a structured metallic coating to the first main surface of the circuit chip and the surface of the support substrate, in order to produce a peripheral conductor structure, which is connected to the pads of the circuit chip, on the main surface of the support substrate and on the first main surface of the circuit chip.