公开(公告)号：US08188495B2

公开(公告)日：2012-05-29

申请号：US12300302

申请日：2007-06-08

申请人： Noritaka Muraki ,  Munetaka Watanabe

发明人： Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length.The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.

摘要翻译： 本发明的目的是提供一种具有优异的光提取效率和高发射输出的氮化镓基化合物半导体发光器件，其中平面形状是矩形，其垂直和纵向各自具有不同的长度。 本发明的发光器件包括基板和形成在基板上的氮化镓基化合物半导体层，其中平面形状是矩形，其垂直和纵向侧各自具有不同的长度，并且氮化镓 - 基底化合物半导体层不垂直于基板的主表面。

公开(公告)号：US20090212319A1

公开(公告)日：2009-08-27

申请号：US12300302

申请日：2007-06-08

申请人： Noritaka Muraki ,  Munetaka Watanabe

发明人： Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L33/00 ,  H01L21/306

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length.The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.

摘要翻译： 本发明的目的是提供一种具有优异的光提取效率和高发射输出的氮化镓基化合物半导体发光器件，其中平面形状是矩形，其垂直和纵向各自具有不同的长度。 本发明的发光器件包括基板和形成在基板上的氮化镓基化合物半导体层，其中平面形状是矩形，其垂直和纵向侧各自具有不同的长度，并且氮化镓 - 基底化合物半导体层不垂直于基板的主表面。

公开(公告)号：US20090184329A1

公开(公告)日：2009-07-23

申请号：US11658352

申请日：2005-07-28

申请人： Hisayuki Miki ,  Noritaka Muraki ,  Munetaka Watanabe

发明人： Hisayuki Miki ,  Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L29/45 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079

摘要： An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage.The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.

摘要翻译： 本发明的目的是提供一种用于面朝上型芯片的透明正极，即使使用低驱动电压也能发出强光。 本发明的半导体发光装置用正极包括形成在半导体层上的透明电极和形成在透明电极上的焊盘电极，其中，焊盘电极具有至少与透明电极接触的反射层 。

公开(公告)号：US07498611B2

公开(公告)日：2009-03-03

申请号：US11659360

申请日：2005-07-27

申请人： Nobuo Eitoh ,  Noritaka Muraki ,  Hisayuki Miki ,  Munetaka Watanabe

发明人： Nobuo Eitoh ,  Noritaka Muraki ,  Hisayuki Miki ,  Munetaka Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.

摘要翻译： 用于氮化镓基化合物半导体发光器件的透明电极包括p型半导体层（5），在p型半导体层上由欧姆接触形成的接触金属层（1），电流扩散层 12），形成在所述接触金属层上，并且在所述透明电极的平面上的电阻率比接触金属低，并且形成在所述电流扩散层上的接合焊盘（13）。 透明电极在扩大p型半导体层的发光表面方面具有优点，降低了正向的工作电压，能够提供优异的粘合强度。

公开(公告)号：US07399994B2

公开(公告)日：2008-07-15

申请号：US11348486

申请日：2006-02-07

申请人： Noritaka Muraki ,  Munetaka Watanabe ,  Yasushi Ohono ,  Hisayuki Miki

发明人： Noritaka Muraki ,  Munetaka Watanabe ,  Yasushi Ohono ,  Hisayuki Miki

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

摘要： A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no Au in the whole region thereof. The metal layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component. The current diffusion layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component except for the case where the metal layer and the current diffusion layer have the same composition. It is possible to provide a white light-emitting device provided with the transparent electrode, a white light-emitting lamp using the white light-emitting device and a lighting fixture using the white light-emitting lamp.

摘要翻译： 用于发射波长为440nm以下的氮化镓系化合物半导体发光元件的透明电极包括与p型半导体层相邻设置的金属层和设置在金属上的电流扩散层 层。 透明电极在其整个区域基本上不含Au。 金属层含有选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。 除了金属层和电流扩散层具有相同组成的情况之外，电流扩散层包含选自由Pt，Ir，Ru和Rh组成的组中的任何一种元素作为主要成分。 可以提供一种设置有透明电极的白色发光装置，使用白色发光装置的白色发光灯和使用白色发光灯的照明器具。

公开(公告)号：US20070126008A1

公开(公告)日：2007-06-07

申请号：US10575365

申请日：2004-10-13

申请人： Munetaka Watanabe

发明人： Munetaka Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a positive electrode which has a three-layer structure comprising an ohmic electrode layer composed of rhodium which is in contact with the p-type semiconductor layer, an adhesion layer composed of titanium which is provided on the ohmic electrode layer and has a thickness of 10 Å or more, and a bonding pad layer provided on the adhesion layer and being composed of a metal selected from the group consisting of gold, aluminum, nickel, and copper, or composed of an alloy containing at least one of these metals.

摘要翻译： 本发明的目的是提供一种显示出优异的欧姆特性，优异的接合特性和高发射输出的倒装芯片型氮化镓化合物半导体发光器件。 本发明的倒装芯片型氮化镓系化合物半导体发光元件具有正极，该正极具有由与由p型半导体层接触的铑构成的欧姆电极层的三层结构， 设置在欧姆电极层上并具有10μm以上的厚度的钛，以及设置在粘合层上并由金，铝，镍和铜组成的组中的金属构成的焊盘层 ，或由含有这些金属中的至少一种的合金构成。

公开(公告)号：US08569735B2

公开(公告)日：2013-10-29

申请号：US12999530

申请日：2009-06-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

IPC分类号： H01L33/04 ,  H01L33/46 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/73265 ,  H01L2933/0016

摘要： A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

摘要翻译： 一种半导体发光元件，包括基板，层叠半导体层，其包括形成在基板上的发光层，形成在层叠半导体层的上表面上的一个电极（111）和形成在所述暴露表面上的另一电极 的半导体层，层叠半导体层从该半导体层被部分切断。 一个电极（111）包括形成为覆盖接合层的接合层（110）和接合焊盘电极（120）。 接合焊盘电极的最大厚度大于接合层电极的最大厚度，并且由一层或两层以上构成。 在接合层和接合焊盘电极的外周部（110d）和（120d）中形成有朝向外周逐渐变薄的斜面（110c），（117c）和（119c）。 还公开了一种用于制造元件和灯的方法。

公开(公告)号：US20110089401A1

公开(公告)日：2011-04-21

申请号：US12999530

申请日：2009-06-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

IPC分类号： H01L33/04 ,  H01L33/46 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/73265 ,  H01L2933/0016

摘要： A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

摘要翻译： 一种半导体发光元件，包括基板，层叠半导体层，其包括形成在基板上的发光层，形成在层叠半导体层的上表面上的一个电极（111）和形成在所述暴露表面上的另一电极 的半导体层，层叠半导体层从该半导体层被部分切断。 一个电极（111）包括形成为覆盖接合层的接合层（110）和接合焊盘电极（120）。 接合焊盘电极的最大厚度大于接合层电极的最大厚度，并且由一层或两层以上构成。 在接合层和接合焊盘电极的外周部（110d）和（120d）中形成有朝向外周逐渐变薄的斜面（110c），（117c）和（119c）。 还公开了一种用于制造元件和灯的方法。

公开(公告)号：US20070080365A1

公开(公告)日：2007-04-12

申请号：US10575090

申请日：2004-10-13

申请人： Munetaka Watanabe

发明人： Munetaka Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a negative electrode provided on the n-type semiconductor layer, and a positive electrode provided on the p-type semiconductor layer, the layers being successively provided atop the substrate in this order and being composed of a gallium nitride compound semiconductor, wherein the positive electrode has a three-layer structure comprising an ohmic electrode layer which is in contact with the p-type semiconductor layer, an adhesion layer which is provided on the ohmic electrode layer, and a bonding pad layer provided on the adhesion layer, each melting point of these layers being lowered in this order.

摘要翻译： 本发明的目的是提供一种显示出优异的欧姆特性，优异的接合特性和高发射输出的倒装芯片型氮化镓化合物半导体发光器件。 本发明的倒装芯片型氮化镓系化合物半导体发光元件包括基板，n型半导体层，发光层，p型半导体层，设置在n型半导体层上的负极 以及设置在p型半导体层上的正极，这些层依次依次设置在衬底上并且由氮化镓化合物半导体构成，其中正极具有包括欧姆电极层的三层结构 其与p型半导体层接触，设置在欧姆电极层上的粘附层和设置在粘合层上的接合焊盘层，这些层的每个熔点依次降低。