公开(公告)号：US08569735B2

公开(公告)日：2013-10-29

申请号：US12999530

申请日：2009-06-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

IPC分类号： H01L33/04 ,  H01L33/46 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/73265 ,  H01L2933/0016

摘要： A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

摘要翻译： 一种半导体发光元件，包括基板，层叠半导体层，其包括形成在基板上的发光层，形成在层叠半导体层的上表面上的一个电极（111）和形成在所述暴露表面上的另一电极 的半导体层，层叠半导体层从该半导体层被部分切断。 一个电极（111）包括形成为覆盖接合层的接合层（110）和接合焊盘电极（120）。 接合焊盘电极的最大厚度大于接合层电极的最大厚度，并且由一层或两层以上构成。 在接合层和接合焊盘电极的外周部（110d）和（120d）中形成有朝向外周逐渐变薄的斜面（110c），（117c）和（119c）。 还公开了一种用于制造元件和灯的方法。

公开(公告)号：US08188495B2

公开(公告)日：2012-05-29

申请号：US12300302

申请日：2007-06-08

申请人： Noritaka Muraki ,  Munetaka Watanabe

发明人： Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length.The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.

摘要翻译： 本发明的目的是提供一种具有优异的光提取效率和高发射输出的氮化镓基化合物半导体发光器件，其中平面形状是矩形，其垂直和纵向各自具有不同的长度。 本发明的发光器件包括基板和形成在基板上的氮化镓基化合物半导体层，其中平面形状是矩形，其垂直和纵向侧各自具有不同的长度，并且氮化镓 - 基底化合物半导体层不垂直于基板的主表面。

公开(公告)号：US20110089401A1

公开(公告)日：2011-04-21

申请号：US12999530

申请日：2009-06-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

IPC分类号： H01L33/04 ,  H01L33/46 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/73265 ,  H01L2933/0016

摘要： A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

摘要翻译： 一种半导体发光元件，包括基板，层叠半导体层，其包括形成在基板上的发光层，形成在层叠半导体层的上表面上的一个电极（111）和形成在所述暴露表面上的另一电极 的半导体层，层叠半导体层从该半导体层被部分切断。 一个电极（111）包括形成为覆盖接合层的接合层（110）和接合焊盘电极（120）。 接合焊盘电极的最大厚度大于接合层电极的最大厚度，并且由一层或两层以上构成。 在接合层和接合焊盘电极的外周部（110d）和（120d）中形成有朝向外周逐渐变薄的斜面（110c），（117c）和（119c）。 还公开了一种用于制造元件和灯的方法。

公开(公告)号：US20090212319A1

公开(公告)日：2009-08-27

申请号：US12300302

申请日：2007-06-08

申请人： Noritaka Muraki ,  Munetaka Watanabe

发明人： Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L33/00 ,  H01L21/306

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length.The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.

摘要翻译： 本发明的目的是提供一种具有优异的光提取效率和高发射输出的氮化镓基化合物半导体发光器件，其中平面形状是矩形，其垂直和纵向各自具有不同的长度。 本发明的发光器件包括基板和形成在基板上的氮化镓基化合物半导体层，其中平面形状是矩形，其垂直和纵向侧各自具有不同的长度，并且氮化镓 - 基底化合物半导体层不垂直于基板的主表面。

公开(公告)号：US20070200129A1

公开(公告)日：2007-08-30

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US20070080365A1

公开(公告)日：2007-04-12

申请号：US10575090

申请日：2004-10-13

申请人： Munetaka Watanabe

发明人： Munetaka Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide a flip-chip-type gallium nitride compound semiconductor light-emitting device exhibiting excellent ohmic characteristics, excellent bonding characteristics, and high emission output. The inventive flip-chip-type gallium nitride compound semiconductor light-emitting device comprises a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a negative electrode provided on the n-type semiconductor layer, and a positive electrode provided on the p-type semiconductor layer, the layers being successively provided atop the substrate in this order and being composed of a gallium nitride compound semiconductor, wherein the positive electrode has a three-layer structure comprising an ohmic electrode layer which is in contact with the p-type semiconductor layer, an adhesion layer which is provided on the ohmic electrode layer, and a bonding pad layer provided on the adhesion layer, each melting point of these layers being lowered in this order.

摘要翻译： 本发明的目的是提供一种显示出优异的欧姆特性，优异的接合特性和高发射输出的倒装芯片型氮化镓化合物半导体发光器件。 本发明的倒装芯片型氮化镓系化合物半导体发光元件包括基板，n型半导体层，发光层，p型半导体层，设置在n型半导体层上的负极 以及设置在p型半导体层上的正极，这些层依次依次设置在衬底上并且由氮化镓化合物半导体构成，其中正极具有包括欧姆电极层的三层结构 其与p型半导体层接触，设置在欧姆电极层上的粘附层和设置在粘合层上的接合焊盘层，这些层的每个熔点依次降低。

公开(公告)号：US08115212B2

公开(公告)日：2012-02-14

申请号：US11658352

申请日：2005-07-28

申请人： Hisayuki Miki ,  Noritaka Muraki ,  Munetaka Watanabe

发明人： Hisayuki Miki ,  Noritaka Muraki ,  Munetaka Watanabe

IPC分类号： H01L27/15 ,  H01L29/24

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079

摘要： An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage.The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.

摘要翻译： 本发明的目的是提供一种用于面朝上型芯片的透明正极，即使使用低驱动电压也能发出强光。 本发明的半导体发光装置用正极包括形成在半导体层上的透明电极和形成在透明电极上的焊盘电极，其中，焊盘电极具有至少与透明电极接触的反射层 。

公开(公告)号：US20080315237A1

公开(公告)日：2008-12-25

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。

公开(公告)号：US07402830B2

公开(公告)日：2008-07-22

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。

公开(公告)号：US20070187666A1

公开(公告)日：2007-08-16

申请号：US10592759

申请日：2005-03-15

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0095

摘要： An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having excellent heat resistance, which device is resistive to an increase in the forward operation voltage (VF) caused by mild heating performed after formation of the light-emitting device (e.g., heating to about 300° C. during mounting of the light-emitting device). The inventive gallium nitride compound semiconductor light-emitting device comprises a substrate; an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, the layers being successively provided atop the substrate and being formed of a gallium nitride compound semiconductor; a negative electrode provided on the n-type semiconductor layer at a certain portion thereof, the portion being exposed by partial, depthwise removal of the light-emitting layer and the p-type semiconductor layer altogether through reactive ion etching; and a positive electrode provided on the remaining p-type semiconductor layer, wherein the gallium nitride compound semiconductor light-emitting device is produced through reactive ion etching by use of silicon tetrachloride as the sole etching gas.

摘要翻译： 本发明的目的是提供一种耐热性优异的氮化镓系化合物半导体发光元件，其特征在于，能够抑制由形成发光后的温和加热引起的正向工作电压（VF）的上升 装置（例如，在安装发光装置期间加热至约300℃）。 本发明的氮化镓化合物半导体发光器件包括衬底; n型半导体层，发光层，p型半导体层，这些层被连续地设置在衬底上并由氮化镓化合物半导体形成; 设置在n型半导体层的某一部分的负极，该部分通过反应离子蚀刻部分地深度地去除发光层和p型半导体层而被曝光; 以及设置在剩余p型半导体层上的正极，其中通过使用四氯化硅作为唯一蚀刻气体通过反应离子蚀刻制造氮化镓系化合物半导体发光器件。