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公开(公告)号：US20210234519A1
公开(公告)日：2021-07-29
申请号：US17207879
申请日：2021-03-22
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi TANAKA , Kazuo WATANABE , Yusuke TANAKA , Satoshi ARAYASHIKI
Abstract: A power amplifier circuit includes a lower transistor having a first terminal, a second terminal connected to ground, and a third terminal, wherein a first power supply voltage is supplied to the first terminal, and an input signal is supplied to the third terminal; a first capacitor; an upper transistor having a first terminal, a second terminal connected to the first terminal of the lower transistor via the first capacitor, and a third terminal, wherein a second power supply voltage is supplied to the first terminal, an amplified signal is outputted to an output terminal from the first terminal, and a driving voltage is supplied to the third terminal; a first inductor that connects the second terminal of the upper transistor to ground; a voltage regulator circuit; and at least one termination circuit that short-circuits an even-order harmonic or odd-order harmonic of the amplified signal to ground potential.
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公开(公告)号：US20200304073A1
公开(公告)日：2020-09-24
申请号：US16821282
申请日：2020-03-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi TANAKA , Kazuo WATANABE , Satoshi ARAYASHIKI
Abstract: A power amplifier circuit includes an amplifier transistor having a first terminal supplied with a power supply voltage that changes in accordance with an amplitude level of an input signal, and a second terminal supplied with the input signal and a bias current, an amplified signal obtained by amplifying the input signal being outputted from the first terminal, a bias circuit that outputs the bias current from an output terminal thereof in accordance with a reference current supplied to an input terminal thereof, and a regulation circuit that generates a regulation current for regulating the bias current in accordance with a change in the power supply voltage. The regulation current increases with an increase in the power supply voltage, and decreases with a decrease in the power supply voltage. The regulation circuit extracts the regulation current from at least one of the reference current or the bias current.
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公开(公告)号：US20200212846A1
公开(公告)日：2020-07-02
申请号：US16721062
申请日：2019-12-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi TANAKA , Kazuo WATANABE , Satoshi ARAYASHIKI
Abstract: A power amplifier circuit includes a first transistor; a first bias circuit that supplies a first bias current or voltage; a capacitor; a first inductor; a second inductor; a second transistor; a second bias circuit that supplies a second bias current or voltage; a third inductor; a third transistor; a third bias circuit that supplies a third bias current or voltage; and a fourth inductor.
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公开(公告)号：US20170085279A1
公开(公告)日：2017-03-23
申请号：US15366355
申请日：2016-12-01
Applicant: MURATA MANUFACTURING CO., LTD.
Inventor： Hidenori OBIYA , Shinya HITOMI , Kiichiro TAKENAKA , Masahiro ITO , Satoshi ARAYASHIKI
CPC classification number: H04B1/04 , H04B1/525 , H04L27/2089 , H04L27/2691 , H04L27/364 , H04L27/367 , H04L2027/0018
Abstract: A transmission circuit includes a transmission signal generation unit, a control unit, and a transmission signal amplification unit. The transmission signal generation unit generates a transmission signal that has been modulated. The transmission signal amplification unit includes a power amplifier that amplifies the transmission signal. The control unit determines a supply voltage signal having an amplitude characteristic of a period identical to that of an envelope of the transmission signal and supplies the supply voltage signal to the power amplifier. The control unit determines an output timing of the supply voltage signal such that a phase difference between a phase of the envelope of the transmission signal and a phase of the supply voltage signal does not become zero.
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公开(公告)号：US20230223969A1
公开(公告)日：2023-07-13
申请号：US18180199
申请日：2023-03-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Fumio HARIMA , Takanori UEJIMA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Masayuki AOIKE
Abstract: A radio frequency module includes a module substrate including major surfaces that face each other; a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed; a second base part that is at least partially comprised of a second semiconductor material having a thermal conductivity lower than the thermal conductivity of the first semiconductor material and in which an amplifier circuit is formed; and an external connection terminal disposed on or over the major surface. The first base part and the second base part are disposed on or over the major surface out of the major surfaces; and the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode.
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Patent Agency Ranking
公开(公告)号：US20220271790A1
公开(公告)日：2022-08-25
申请号：US17663585
申请日：2022-05-16
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi SAKURAI , Satoshi ARAYASHIKI , Satoshi TANAKA , Kyoichi HIRAYAMA , Tomohito ITO , Kenta KURAHASHI
Abstract: A high-frequency module includes a transmission signal amplifier that outputs a transmission signal to an antenna terminal side; a reception signal amplifier that amplifies a reception signal supplied from an antenna terminal; a switch that selectively connects the antenna terminal to either an output of the transmission signal amplifier or an input of the reception signal amplifier; and a directional coupler that is provided on a transmission signal path and detects a signal level of the transmission signal. The transmission signal amplifier is controlled by a first control signal supplied from a first control circuit. The reception signal amplifier is controlled by a second control signal supplied from a second control circuit. The switch is controlled by a switch control signal supplied from the first control circuit. The directional coupler is controlled by a coupler control signal supplied from the first control circuit.
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公开(公告)号：US20220109411A1
公开(公告)日：2022-04-07
申请号：US17490798
申请日：2021-09-30
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Shunji YOSHIMI , Yuji TAKEMATSU , Yukiya YAMAGUCHI , Takanori UEJIMA , Satoshi GOTO , Satoshi ARAYASHIKI
IPC: H03F3/21 , H01L25/065 , H01L23/538 , H01L29/737 , H01L23/522
Abstract: A semiconductor devices comprises a first member including a first circuit partially formed by an elemental semiconductor element at a surface layer, a first conductive raised portion at the first member, and a second member smaller than the first member in plan view joined to the first member. The second member includes a second circuit partially formed by a compound semiconductor element. A second conductive raised portion is at the second member. A power amplifier includes a first-stage amplifier circuit included in the first or second circuit and a second-stage amplifier circuit included in the second circuit. The first circuit includes a first switch for inputting to the first-stage amplifier circuit a radio-frequency signal inputted to a selected contact, a control circuit to control the first- and second-stage amplifier circuits, and a second switch for outputting from a selected contact a radio-frequency signal outputted by the second-stage amplifier circuit.
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公开(公告)号：US20210211106A1
公开(公告)日：2021-07-08
申请号：US17211072
申请日：2021-03-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi ARAYASHIKI , Satoshi GOTO , Satoshi TANAKA , Yasuhisa YAMAMOTO
Abstract: Provided is a power amplification module that includes: a first transistor, a first signal being inputted to a base thereof; a second transistor, the first signal being inputted to a base thereof and a collector thereof being connected to a collector of the first transistor; a first resistor, a first bias current being supplied to one end thereof and another end thereof being connected to the base of the first transistor; a second resistor, one end thereof being connected to the one end of the first resistor and another end thereof being connected to the base of the second transistor; and a third resistor, a second bias current being supplied to one end thereof and another end thereof being connected to the base of the second transistor.
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公开(公告)号：US20210044262A1
公开(公告)日：2021-02-11
申请号：US17078876
申请日：2020-10-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Satoshi ARAYASHIKI , Kazuo WATANABE , Satoshi TANAKA
Abstract: A power amplifier circuit includes lower-stage and upper-stage differential amplifying pairs, a combiner, first and second inductors, and first and second capacitors. First and second signals are input into the lower-stage differential amplifying pair. The upper-stage differential amplifying pair outputs first and second amplified signals. The combiner combines the first and second amplified signals. The lower-stage differential amplifying pair includes first and second transistors. A supply voltage is supplied to the collectors of the first and second transistors. The first and second signals are supplied to the bases of the first and second transistors. The upper-stage differential amplifying pair includes third and fourth transistors. A supply voltage is supplied to the collectors of the third and fourth transistors. The emitters of the third and fourth transistors are grounded via the first and second inductors and are connected to the first and second transistors via the first and second capacitors.
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公开(公告)号：US20230299061A1
公开(公告)日：2023-09-21
申请号：US18323654
申请日：2023-05-25
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Yukiya YAMAGUCHI , Takanori UEJIMA , Motoji TSUDA , Yuji TAKEMATSU , Shunji YOSHIMI , Satoshi ARAYASHIKI , Mitsunori SAMATA , Satoshi GOTO , Masayuki AOIKE
CPC classification number: H01L25/16 , H01L25/18 , H01L24/13 , H01L24/16 , H01L2224/13082 , H01L2224/16225 , H01L24/29 , H01L2224/29186 , H01L2924/0504 , H01L24/32 , H01L2224/32145
Abstract: A radio frequency module includes a module substrate having major surfaces that face each other, a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed, a second base part that is at least partially comprised of a second semiconductor material different from the first semiconductor material and in which a power amplifier is formed, and a switch connected to an output terminal of the power amplifier. The first base part is disposed on or over the major surface; the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode; and the switch is disposed on or over the major surface.
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