公开(公告)号：US20180083159A1

公开(公告)日：2018-03-22

申请号：US15703480

申请日：2017-09-13

Applicant: NICHIA CORPORATION

Inventor： Naoki MUSASHI

IPC: H01L33/00 ,  B32B43/00 ,  B23K26/00

CPC classification number: H01L33/0079 ,  B23K26/0823 ,  B23K26/0853 ,  B23K26/0876 ,  B23K26/53 ,  B23K2101/40 ,  B32B43/006 ,  B32B2310/0843 ,  B32B2457/14 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44

Abstract: A method of manufacturing a light emitting element includes: providing a wafer including a substrate and a semiconductor layered body formed at an upper surface of the substrate; irradiating the wafer with laser light by performing first and second patterns of scanning; and separating the substrate from the semiconductor layered body. In the first pattern of scanning, the wafer is irradiated with the laser light outwardly from an inner side of the wafer or inwardly from an outer side of the wafer, so that a region irradiated with the laser light enlarges. In the second pattern of scanning, the wafer is irradiated with the laser light so that the laser light intersects with a circumferential edge of the wafer at a plurality of portions.