公开(公告)号：US20130078770A1

公开(公告)日：2013-03-28

申请号：US13631286

申请日：2012-09-28

Applicant: NITTO DENKO CORPORATION

Inventor： Takashi Oda ,  Kosuke Morita ,  Eiji Toyoda

IPC: H01L21/56

CPC classification number: H01L21/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2221/68336 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided. The method comprises: preparing a semiconductor chip having a first main surface on which an electroconductive member is formed; preparing a supporting structure in which, over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order; arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of the semiconductor chips opposite to the first main surface; laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips; and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer from the first thermosetting resin layer.

公开(公告)号：US20130078769A1

公开(公告)日：2013-03-28

申请号：US13631268

申请日：2012-09-28

Applicant: NITTO DENKO CORPORATION

Inventor： Takashi Oda ,  Kosuke Morita ,  Eiji Toyoda

IPC: H01L21/56

CPC classification number: H01L24/20 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3128 ,  H01L24/19 ,  H01L2221/68336 ,  H01L2224/12105 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A method for producing a semiconductor device for improving production efficiency and the flexibility of production design thereof is provided. The method includes preparing semiconductor chips having a first main surface on which an electroconductive member is formed, preparing a supporting structure in which over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order, arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to the first main surfaces of the semiconductor chips, laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips, and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer and the first thermosetting resin layer from each other.

Abstract translation: 提供一种制造用于提高生产效率的半导体器件的方法及其制造设计的灵活性。 该方法包括制备具有第一主表面的半导体芯片，其上形成有导电构件，制备支撑结构，其中在被配置为透射辐射的支撑件上，层叠可辐射固化压敏粘合剂层和第一热固性树脂层 将半导体芯片布置在第一热固性树脂层上以将第一热固性树脂层面向半导体芯片的第一主表面，在第一热固性树脂层上层叠第二热固性树脂层以覆盖半导体芯片，并固化 可辐射固化型粘合剂层通过从支撑侧照射而将可辐射固化压敏粘合剂层和第一热固性树脂层彼此剥离。

公开(公告)号：US20130288428A1

公开(公告)日：2013-10-31

申请号：US13931525

申请日：2013-06-28

Applicant: NITTO DENKO CORPORATION

Inventor： Takashi Oda ,  Kosuke Morita ,  Eiji Toyoda

IPC: H01L21/50

CPC classification number: H01L21/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/544 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2221/68336 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/00

Abstract: A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided. The method comprises: preparing a semiconductor chip having a first main surface on which an electroconductive member is formed; preparing a supporting structure in which, over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order; arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of the semiconductor chips opposite to the first main surface; laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips; and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer from the first thermosetting resin layer.

Abstract translation: 提供一种用于制造半导体器件的方法，该半导体器件包括半导体芯片，用于提高生产效率和生产设计的灵活性。 该方法包括：制备具有形成有导电构件的第一主表面的半导体芯片; 制备其中在被配置为透射辐射的支撑件上，可辐射固化压敏粘合剂层和第一热固性树脂层按顺序层压的支撑结构; 将第一热固性树脂层上的半导体芯片布置成与第一主表面相对的半导体芯片的第二主表面面对第一热固性树脂层; 在第一热固性树脂层上层叠第二热固性树脂层以覆盖半导体芯片; 并且通过从支撑侧照射从第一热固性树脂层剥离可辐射固化压敏粘合剂层来固化可辐射固化压敏粘合剂层。