公开(公告)号：US20130234164A1

公开(公告)日：2013-09-12

申请号：US13885467

申请日：2011-11-15

申请人： Hiroyuki Nagasawa ,  Takamitsu Kawahara ,  Kuniaki Yagi ,  Naoki Hatta

发明人： Hiroyuki Nagasawa ,  Takamitsu Kawahara ,  Kuniaki Yagi ,  Naoki Hatta

IPC分类号： H01L21/02 ,  H01L29/16

CPC分类号： H01L21/02529 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L29/1608

摘要： There is provided a silicon carbide substrate composed of silicon carbide, including encapsulated regions inside, which form incoherent boundaries between the silicon carbide and the encapsulated regions, wherein propagation of stacking faults in the silicon carbide is blocked.

摘要翻译： 提供由碳化硅组成的碳化硅衬底，其包括内部的封装区域，其在碳化硅和封装区域之间形成非相干边界，其中碳化硅中堆垛层错的传播被阻挡。

公开(公告)号：US20130228797A1

公开(公告)日：2013-09-05

申请号：US13885573

申请日：2011-11-15

申请人： Hiroyuki Nagasawa ,  Takamitsu Kawahara ,  Kuniaki Yagi ,  Naoki Hatta

发明人： Hiroyuki Nagasawa ,  Takamitsu Kawahara ,  Kuniaki Yagi ,  Naoki Hatta

IPC分类号： H01L29/16

CPC分类号： H01L21/02529 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02447 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L29/1608

摘要： To provide a silicon carbide substrate having at least one or more main surfaces, including: a plurality of encapsulated regions inside, wherein the plurality of encapsulated regions are distributed in a direction approximately parallel to one of the main surfaces, with each encapsulated region positioned at a distance of 100 nm or more and 100 μm or less from the main surfaces to inside a substrate, and each encapsulated region having a width of 100 nm or more and 100 μm or less in a direction parallel to the main surfaces.

摘要翻译： 为了提供具有至少一个或多个主表面的碳化硅衬底，包括：内部的多个封装区域，其中所述多个封装区域沿大致平行于主表面之一的方向分布，每个封装区域位于 从主表面到基板内的距离为100nm以上且100μm以下的距离，并且在与主表面平行的方向上具有100nm以上且100μm以下的宽度的每个封装区域。

公开(公告)号：US07815888B2

公开(公告)日：2010-10-19

申请号：US10485671

申请日：2002-07-31

申请人： Naoki Hatta ,  Shigeto Okada ,  Jun-Ichi Yamaki

发明人： Naoki Hatta ,  Shigeto Okada ,  Jun-Ichi Yamaki

IPC分类号： C01D1/02

CPC分类号： H01M4/136 ,  H01M4/133 ,  H01M4/5825 ,  H01M4/625 ,  H01M10/0525

摘要： Disclosed is a process for producing a secondary battery cathode material by calcining raw materials. The process is characterized by calcining the raw materials together with one or more substances, which are selected from the group consisting of hydrogen, water and water vapor, and conductive carbon and/or a substance, which can form conductive carbon by pyrolysis, added thereto. As crystals of the secondary battery cathode material obtained by this process have been controlled fine sizes, the secondary battery cathode material promotes movements of ions of an alkali metal led by lithium between the interiors of grains of the cathode material and an electrolyte to suppress polarization in an electrode reaction, and further, increases an area of contact between the positive material and a conductivity-imparting material to provide improved conductivity so that improvements are assured in voltage efficiency and specific battery capacity.

摘要翻译： 公开了通过煅烧原料制造二次电池正极材料的方法。 该方法的特征在于将原料与一种或多种选自氢，水和水蒸气的物质一起煅烧，以及可通过热解形成导电碳的导电碳和/或物质 。 由于通过该方法获得的二次电池正极材料的晶体已被控制为精细尺寸，所以二次电池正极材料促进在由阴极材料的晶粒和电解质的内部之间的由锂引导的碱金属的离子的移动以抑制极化 电极反应，并且进一步增加正材料和导电性赋予材料之间的接触面积，以提供改善的导电性，从而确保电压效率和特定电池容量的改进。

公开(公告)号：US07498098B2

公开(公告)日：2009-03-03

申请号：US10531191

申请日：2003-10-17

申请人： Shigeto Okada ,  Jun-ichi Yamaki ,  Yike Chen ,  Takafumi Yamamoto ,  Naoki Hatta

发明人： Shigeto Okada ,  Jun-ichi Yamaki ,  Yike Chen ,  Takafumi Yamamoto ,  Naoki Hatta

IPC分类号： H01M4/58

CPC分类号： H01M10/052 ,  C01B25/375 ,  H01M4/04 ,  H01M4/0471 ,  H01M4/5825 ,  H01M4/623 ,  H01M4/625 ,  H01M2004/028

摘要： A method for producing a cathode material for a lithium battery, characterized in that it comprises admixing a compound liberating a phosphate ion in a solution and metallic iron, and dissolving the metallic iron, followed by firing, thereby synthesizing ferric phosphate. The above method further comprising reacting a raw material mixture while grinding it down or refluxing can produce ferric phosphate cathode material having a fine particle diameter and exhibiting high activity, through a precursor before firing having a fine particle diameter.

摘要翻译： 一种锂电池用阴极材料的制造方法，其特征在于，将溶解有磷酸根离子的化合物与金属铁混合，并将金属铁溶解，进行烧成，由此合成磷酸铁。 上述方法进一步包括使原料混合物在下降或回流下进行反应，可以通过具有细粒径的焙烧前的前体产生具有细粒径并显示高活性的磷酸铁锂阴极材料。

公开(公告)号：US20060127750A1

公开(公告)日：2006-06-15

申请号：US10531191

申请日：2003-10-17

申请人： Shigeto Okada ,  Jun-Ichi Yamaki ,  Yike Chen ,  Takafumi Yamamoto ,  Naoki Hatta

发明人： Shigeto Okada ,  Jun-Ichi Yamaki ,  Yike Chen ,  Takafumi Yamamoto ,  Naoki Hatta

IPC分类号： H01M10/00 ,  H01M4/58

CPC分类号： H01M10/052 ,  C01B25/375 ,  H01M4/04 ,  H01M4/0471 ,  H01M4/5825 ,  H01M4/623 ,  H01M4/625 ,  H01M2004/028

摘要： A method for producing a cathode material for a lithium battery, characterized in that it comprises admixing a compound liberating a phosphate ion in a solution and metallic iron, and dissolving the metallic iron, followed by firing, thereby synthesizing ferric phosphate. The above method further comprising reacting a raw material mixture while grinding it down or refluxing can produce ferric phosphate cathode material having a fine particle diameter and exhibiting high activity, through a precursor before firing having a fine particle diameter.

摘要翻译： 一种锂电池用阴极材料的制造方法，其特征在于，将溶解有磷酸根离子的化合物与金属铁混合，并将金属铁溶解，进行烧成，由此合成磷酸铁。 上述方法进一步包括使原料混合物在下降或回流下进行反应，可以通过具有细粒径的焙烧前的前体产生具有细粒径并显示高活性的磷酸铁锂阴极材料。

公开(公告)号：US20110006310A1

公开(公告)日：2011-01-13

申请号：US12742398

申请日：2008-11-11

申请人： Hiroyuki Nagasawa ,  Naoki Hatta ,  Takamitsu Kawahara ,  Hikaru Kobayashi

发明人： Hiroyuki Nagasawa ,  Naoki Hatta ,  Takamitsu Kawahara ,  Hikaru Kobayashi

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L29/872 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/94

摘要： A semiconductor device comprises a semiconductor substrate made of silicon carbide, a gate insulating film formed on the semiconductor substrate, and a gate electrode formed on the gate insulating film. The junction surface of the semiconductor surface joined with the gate insulating film is macroscopically parallel to a nonpolar face and microscopically comprised of the nonpolar face and a polar face. In the polar face, either a Si face or a C face is dominant. A semiconductor device comprises a semiconductor substrate comprised of silicon carbide and a gate electrode formed on the semiconductor substrate. The junction surface of the semiconductor surface joined with the electrode is macroscopically parallel to a nonpolar face and microscopically comprised of the nonpolar face and a polar face. In the polar face, either a Si face or a C face is dominant. The present invention is a semiconductor device having a silicon carbide substrate, and the electrical characteristics and the stability of the interface between the electrode and the silicon carbide or between the oxide film (insulating film) and the silicon carbide in the nonpolar face of a silicon carbide epitaxial layer can be improved.

摘要翻译： 半导体器件包括由碳化硅制成的半导体衬底，形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 与栅极绝缘膜接合的半导体表面的接合表面在宏观上平行于非极性面并且显微地由非极性面和极面组成。 在极面中，Si面或C面是主要的。 半导体器件包括由碳化硅构成的半导体衬底和形成在半导体衬底上的栅电极。 与电极接合的半导体表面的结表面在宏观上平行于非极性面并且显微地由非极性面和极面组成。 在极面中，Si面或C面是主要的。 本发明是一种具有碳化硅衬底的半导体器件，以及电极和碳化硅之间或氧化膜（绝缘膜）和硅的非极性表面中的碳化硅之间的界面的电特性和稳定性 可以改善碳化物外延层。