公开(公告)号：US20200020775A1

公开(公告)日：2020-01-16

申请号：US16485496

申请日：2017-02-14

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Ryota TANAKA ,  Keisuke TAKEMOTO ,  Yasuaki HAYAMI

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66

Abstract: There are included a first conductivity-type first drift region formed on a first main surface of a substrate, and a first conductivity-type second drift region formed on the first main surface of the substrate, the second drift region formed to be reached to a deeper position of the substrate than a position of the first drift region. There are further included a second conductivity-type well region in contact with the second drift region, a first conductivity-type source region formed to extend in a direction perpendicular to a surface of the well region, and a first conductivity-type drain region separated from the well region, the drain region formed to extend in a direction perpendicular to a surface of the first drift region. Since a flow path of electrons after passing through a channel can be widened, a resistance can be reduced.

公开(公告)号：US20190181854A1

公开(公告)日：2019-06-13

申请号：US16310086

申请日：2016-06-17

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Taku SHIMOMURA ,  Tetsuya HAYASHI ,  Akinori OKUBO ,  Yuichi IWASAKI

IPC: H03K17/16 ,  H02M1/08

Abstract: A drive device wherein a main switching element is connected to a main current path, an input terminal of the switching element on the higher potential side and an output terminal of the switching element on the lower potential side are electrically connected to a control terminal of the main switching element, a first resistance is connected between an input terminal of the switching element on the lower potential side and a control terminal of the main switching element, a first capacitor is parallelly connected to the first resistance, and a second capacitor is connected between a connection point of the first resistance and a control terminal of the main switching element and a terminal on the higher potential side of the main switching element.

公开(公告)号：US20210183823A1

公开(公告)日：2021-06-17

申请号：US16758994

申请日：2017-10-27

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Kenta EMORI ,  Tetsuya HAYASHI

IPC: H01L25/07 ,  H01L23/00

Abstract: The semiconductor device includes at least three semiconductor elements disposed directly or indirectly on a planar member and constituting an upper arm and a lower arm which perform ON and OFF action at mutually differential times; an upper-surface voltage applied region of each semiconductor element is configured to be narrower than an area of the aforementioned whole semiconductor element in planar view; and each semiconductor element is disposed so that the shortest distance between the semiconductor elements constituting the upper arm is formed so as to be longer than the shortest distance between the semiconductor element constituting the upper arm and the semiconductor element constituting the lower arm.

公开(公告)号：US20210057995A1

公开(公告)日：2021-02-25

申请号：US16977876

申请日：2018-03-07

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Toshihiro KAI ,  Shigeharu YAMAGAMI ,  Tetsuya HAYASHI ,  Yusuke ZUSHI ,  Taku SHIMOMURA

IPC: H02M3/156 ,  H02M1/08

Abstract: The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L0, C0) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

公开(公告)号：US20190341178A1

公开(公告)日：2019-11-07

申请号：US16309544

申请日：2016-06-21

Applicant: Nissan Motor Co., Ltd.

Inventor： Yusuke ZUSHI ,  Tetsuya HAYASHI ,  Yasuaki HAYAMI ,  Wei NI ,  Akimitsu YAMAMOTO

IPC: H01F5/06 ,  H01F27/24 ,  H01F41/06 ,  H01F27/29 ,  H01F27/32 ,  H01F17/04

Abstract: An inductor includes a substrate as a base material, a core portion, a coil portion, an insulating portion formed between conductors of the coil portion, and a terminal portion connecting the core portion and the coil portion to the outside. A main direction of a magnetic field that is generated in accordance with current flowing through the coil portion extends in a planar direction of the substrate. In at least a portion of the coil portion, both width and thickness of a rectangular cross-sectional area of the coil portion are larger than the width of the insulating portion.

公开(公告)号：US20180152093A1

公开(公告)日：2018-05-31

申请号：US15575963

申请日：2015-05-22

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Yusuke ZUSHI ,  Tatsuhiro SUZUKI ,  Keiichiro NUMAKURA ,  Taku SHIMOMURA ,  Tetsuya HAYASHI

IPC: H02M1/08 ,  H02M7/48 ,  H02M7/217 ,  H03K17/567 ,  H02M5/458

CPC classification number: H02M1/08 ,  H02M1/088 ,  H02M5/4585 ,  H02M7/217 ,  H02M7/48 ,  H02M7/537 ,  H02M2001/0006 ,  H03K17/0822 ,  H03K17/122 ,  H03K17/165 ,  H03K17/567 ,  H03K2217/0081

Abstract: A power conversion device includes a gate voltage adjustment unit (a detection circuit 12) which acts on a drive signal from a gate drive circuit 11 that sends a drive signal to the respective gates of a plurality of semiconductor elements Q1 to Q2 provided in parallel, and which adjusts the gate voltages of the semiconductor elements. The gate voltage adjustment unit superimposes an induction voltage generated on the basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements.

公开(公告)号：US20180131178A1

公开(公告)日：2018-05-10

申请号：US15574975

申请日：2015-05-20

Applicant: NISSAN MOTOR CO., LTD.

Inventor： Taku SHIMOMURA ,  Tetsuya HAYASHI ,  Dai TSUGAWA ,  Takayuki IKARI

IPC: H02H9/00 ,  H01H9/54 ,  H02M7/48

CPC classification number: H02H9/001 ,  G01R31/3278 ,  G01R31/44 ,  H01H9/542 ,  H02M3/00 ,  H02M7/48

Abstract: A power supply control apparatus includes a DC power supply including a positive electrode and a negative electrode, a load electrically connected to the DC power supply, a relay connected to a current path from the positive electrode to the negative electrode through the load in series, a switching device connected to the current path in series, and a controller controlling the relay and the switching device. The controller, in a case in which the current path is to be electrically cut off, switches the switching device to an Off state and then switches the relay to the Off state.

公开(公告)号：US20240055475A1

公开(公告)日：2024-02-15

申请号：US18039610

申请日：2020-12-01

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Wei NI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Toshiharu MARUI ,  Ryouta TANAKA ,  Yuichi IWASAKI

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/0638 ,  H01L29/7835 ,  H01L29/4236 ,  H01L29/1608 ,  H01L29/66704

Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

公开(公告)号：US20230074093A1

公开(公告)日：2023-03-09

申请号：US17944853

申请日：2022-09-14

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

公开(公告)号：US20230013819A1

公开(公告)日：2023-01-19

申请号：US17944844

申请日：2022-09-14

Applicant: NISSAN MOTOR CO., LTD. ,  RENAULT s.a.s.

Inventor： Toshiharu MARUI ,  Tetsuya HAYASHI ,  Keiichiro NUMAKURA ,  Wei NI ,  Ryota TANAKA ,  Keisuke TAKEMOTO

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/16

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.