公开(公告)号：US07889255B2

公开(公告)日：2011-02-15

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US07855406B2

公开(公告)日：2010-12-21

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/062

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 提供了p型外延层和n型外延层已经沉积在p +型衬底上的n / p- / p +衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从衬底表面到达p型外延层。 在芯片切割部分还形成了p型半导体区域，用于将衬底分成各个器件，从衬底表面到达p型外延层。

公开(公告)号：US07709870B2

公开(公告)日：2010-05-04

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US20070108487A1

公开(公告)日：2007-05-17

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US20080012088A1

公开(公告)日：2008-01-17

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/103

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 其中p型+外延层和n型外延层已经沉积在p < SUP + +型衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从P型半导体区域到达p型半导体区域 基材表面。 在芯片切割部分也形成了p型半导体区域，用于将基板分离为各个器件，从而从衬底表面到达p +型外延层。

公开(公告)号：US20060082669A1

公开(公告)日：2006-04-20

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US07355158B2

公开(公告)日：2008-04-08

申请号：US11826926

申请日：2007-07-19

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

IPC分类号： H01L21/00 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。

公开(公告)号：US06642087B2

公开(公告)日：2003-11-04

申请号：US10339395

申请日：2003-01-10

申请人： Hidetoshi Nozaki ,  Ikuko Inoue ,  Hirofumi Yamashita

发明人： Hidetoshi Nozaki ,  Ikuko Inoue ,  Hirofumi Yamashita

IPC分类号： H01L2100

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14654

摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。