公开(公告)号：US20070108487A1

公开(公告)日：2007-05-17

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US07889255B2

公开(公告)日：2011-02-15

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US07855406B2

公开(公告)日：2010-12-21

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/062

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 提供了p型外延层和n型外延层已经沉积在p +型衬底上的n / p- / p +衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从衬底表面到达p型外延层。 在芯片切割部分还形成了p型半导体区域，用于将衬底分成各个器件，从衬底表面到达p型外延层。

公开(公告)号：US07709870B2

公开(公告)日：2010-05-04

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US20080012088A1

公开(公告)日：2008-01-17

申请号：US11776791

申请日：2007-07-12

申请人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

发明人： Tetsuya YAMAGUCHI ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Ikuko Inoue ,  Nagataka Tanaka ,  Hisanori Ihara

IPC分类号： H01L31/103

CPC分类号： H01L27/14609

摘要： An n/p−/p+ substrate where a p−-type epitaxial layer and an n-type epitaxial layer have been deposited on a p+-type substrate is provided. In the surface region of the n-type epitaxial layer, the n-type region of a photoelectric conversion part has been formed. Furthermore, a barrier layer composed of a p-type semiconductor region has been formed so as to enclose the n-type region of the photoelectric conversion part in a plane and reach the p−-type epitaxial layer from the substrate surface. A p-type semiconductor region has also been formed at a chip cutting part for dividing the substrate into individual devices so as to reach the p−-type epitaxial layer from the substrate surface.

摘要翻译： 其中p型+外延层和n型外延层已经沉积在p < SUP + +型衬底。 在n型外延层的表面区域中，形成了光电转换部的n型区域。 此外，已经形成了由p型半导体区域构成的阻挡层，以将光电转换部件的n型区域包围在平面内并从P型半导体区域到达p型半导体区域 基材表面。 在芯片切割部分也形成了p型半导体区域，用于将基板分离为各个器件，从而从衬底表面到达p +型外延层。

公开(公告)号：US20060082669A1

公开(公告)日：2006-04-20

申请号：US11251882

申请日：2005-10-18

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Nagataka Tanaka ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroshige Goto

IPC分类号： H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643

摘要： Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.

摘要翻译： 设置在固态成像器件的半导体衬底上的每个单元电池包括将半导体衬底隔离成n型光电转换区域的第一p型阱，形成在表面的第二p型阱 的光电转换区域，并且其中形成信号扫描电路部分的信号存储部分，以及形成在光电转换区域与第二p型光电转换区域的表面中的高掺杂n型层的信号存储部分 杂质浓度高于光电转换区。 信号存储部分，其部分放置在信号读出门的下面，适于将信号电荷的分组从存储部分传送到信号扫描电路部分，并且其部分位于读出栅极下方的最深处。

公开(公告)号：US06674470B1

公开(公告)日：2004-01-06

申请号：US08933975

申请日：1997-09-19

申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

公开(公告)号：US20060046369A1

公开(公告)日：2006-03-02

申请号：US11210681

申请日：2005-08-25

申请人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

发明人： Hisanori Ihara ,  Nagataka Tanaka ,  Hiroshige Goto

IPC分类号： H01L21/76 ,  H01L21/8238

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14689

摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.

摘要翻译： 一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。 或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在 在所述屏蔽区域和所述第一半导体区域之间。