-
1.发明授权Solid-state image sensor having a substrate with an impurity concentration gradient 失效具有杂质浓度梯度的衬底的固态图像传感器公开(公告)号：US06271554B1
公开(公告)日：2001-08-07
申请号：US09110074
申请日：1998-07-02
IPC分类号： H01L27146
CPC分类号： H01L27/14643
摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。
-
公开(公告)号：US07355158B2
公开(公告)日：2008-04-08
申请号：US11826926
申请日：2007-07-19
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
-
3.发明授权Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same 失效具有光电二极管和MOSFET的固态成像装置及其制造方法公开(公告)号：US06642087B2
公开(公告)日：2003-11-04
申请号：US10339395
申请日：2003-01-10
IPC分类号： H01L2100
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/14654
摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。
-
4.发明授权Solid-state image sensor having a substrate with an impurity concentration gradient 有权具有杂质浓度梯度的衬底的固态图像传感器公开(公告)号：US06441411B2
公开(公告)日：2002-08-27
申请号：US09728123
申请日：2000-12-04
IPC分类号： H01L27146
CPC分类号： H01L27/14643
摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。
-
公开(公告)号：US20070262241A1
公开(公告)日：2007-11-15
申请号：US11826927
申请日：2007-07-19
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
-
公开(公告)号：US07224003B2
公开(公告)日：2007-05-29
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/0328
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。
-
公开(公告)号：US07042061B2
公开(公告)日：2006-05-09
申请号：US10727515
申请日：2003-12-05
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06 , H01L27/148
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。
-
公开(公告)号：US06690423B1
公开(公告)日：2004-02-10
申请号：US09272337
申请日：1999-03-19
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。
-
公开(公告)号：US07482570B2
公开(公告)日：2009-01-27
申请号：US11826927
申请日：2007-07-19
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
-
公开(公告)号：US20070262240A1
公开(公告)日：2007-11-15
申请号：US11826926
申请日：2007-07-19
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
-
-
-
-
-
-
-
-
-
搜索结果
49 条记录 (耗时 0.024 秒)