公开(公告)号：US20220077210A1

公开(公告)日：2022-03-10

申请号：US17530358

申请日：2021-11-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wei-Feng Lin ,  Ying-Chih Kuo ,  Ying Chung

IPC: H01L27/146

Abstract: A method of image sensor package fabrication includes forming a recess in a transparent substrate, depositing conductive traces in the recess, inserting an image sensor in the recess so that the image sensor is positioned in the recess to receive light through the transparent substrate, and inserting a circuit board in the recess so that the image sensor is positioned between the transparent substrate and the circuit board.

公开(公告)号：US10985149B2

公开(公告)日：2021-04-20

申请号：US16248125

申请日：2019-01-15

Applicant: Omnivision Technologies, Inc.

Inventor： Chien Chan Yeh ,  Ying-Chih Kuo ,  Wei-Feng Lin

IPC: H01L25/16 ,  H01L23/31 ,  H01L23/00 ,  H01L23/538 ,  H01L21/56

Abstract: A semiconductor device package includes a transparent substrate, a photo detector and a first conductive layer. The transparent substrate has a first surface and a first cavity underneath the first surface. The photo detector is disposed within the first cavity. The photo detector has a sensing area facing toward a bottom surface of the first cavity of the transparent substrate. The first conductive layer is disposed over the transparent substrate and electrically connected to the photo detector.

公开(公告)号：US20180082937A1

公开(公告)日：2018-03-22

申请号：US15268169

申请日：2016-09-16

Applicant: OmniVision Technologies, Inc.

Inventor： Chi-Kuei Lee ,  Ying Chung ,  Ying-Chih Kuo ,  Wei-Feng Lin

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L21/02 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/02274 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/06 ,  H01L2224/0401

Abstract: A microchip includes a passivation layer formed over underlying circuitry, a redistribution layer formed over the passivation layer, and a cap layer formed over the redistribution conductors of the redistribution layer and in contact with the passivation layer. The passivation layer and the cap layer have one or more compatibilities that provide sufficient adhesion between those two layers to prevent metal migration from the conductors of the redistribution layer between the interfaces of the passivation and cap layers. In one embodiment, the passivation and cap layers are each formed from an inorganic oxide (e.g., SiO2) using a process (e.g., PECVD) that provides substantially-uniform step coverage by the cap layer in trench and via regions of underlying circuitry. The invention increases the reliability of the microchip, because it eliminates metal migration, and the electrical shorting caused therefrom, in the redistribution layer.

公开(公告)号：US09922922B1

公开(公告)日：2018-03-20

申请号：US15268169

申请日：2016-09-16

Applicant: OmniVision Technologies, Inc.

Inventor： Chi-Kuei Lee ,  Ying Chung ,  Ying-Chih Kuo ,  Wei-Feng Lin

IPC: H01L23/498 ,  H01L21/56 ,  H01L23/00 ,  H01L21/02 ,  H01L23/31

CPC classification number: H01L23/49838 ,  H01L21/02274 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/06 ,  H01L2224/0401

Abstract: A microchip includes a passivation layer formed over underlying circuitry, a redistribution layer formed over the passivation layer, and a cap layer formed over the redistribution conductors of the redistribution layer and in contact with the passivation layer. The passivation layer and the cap layer have one or more compatibilities that provide sufficient adhesion between those two layers to prevent metal migration from the conductors of the redistribution layer between the interfaces of the passivation and cap layers. In one embodiment, the passivation and cap layers are each formed from an inorganic oxide (e.g., SiO2) using a process (e.g., PECVD) that provides substantially-uniform step coverage by the cap layer in trench and via regions of underlying circuitry. The invention increases the reliability of the microchip, because it eliminates metal migration, and the electrical shorting caused therefrom, in the redistribution layer.