公开(公告)号：US20240073559A1

公开(公告)日：2024-02-29

申请号：US17893689

申请日：2022-08-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Young Woo Jung ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Zhiqiang Lin ,  Sang Joo Lee

IPC: H04N5/369 ,  H01L27/146

CPC classification number: H04N5/36961 ,  H01L27/14612 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/3698

Abstract: Electrical Phase Detection Auto Focus. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array disposed in a semiconductor material. Each pixel includes a plurality of photodiodes configured to receive incoming light through an illuminated surface of the semiconductor material. The plurality of pixels includes at least one autofocusing phase detection (PDAF) pixel having: a first subpixel without a light shielding, and a second subpixel without the light shielding. Autofocusing of the image sensor is at least in part determined based on different electrical outputs of the first subpixel and the second sub pixels.

公开(公告)号：US11502120B2

公开(公告)日：2022-11-15

申请号：US16721320

申请日：2019-12-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

IPC: H01L27/146

Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

公开(公告)号：US20190115388A1

公开(公告)日：2019-04-18

申请号：US15786874

申请日：2017-10-18

Applicant: OmniVision Technologies, Inc.

Inventor： Young Woo Jung ,  Lindsay Grant ,  Dyson Tai ,  Vincent Venezia ,  Wei Zheng

IPC: H01L27/148 ,  H01L27/146

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.