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    IMAGE SENSOR WITH MULTI-PIXEL DETECTOR AND PARTIAL ISOLATION STRUCTURE
    1.
    发明申请
    IMAGE SENSOR WITH MULTI-PIXEL DETECTOR AND PARTIAL ISOLATION STRUCTURE 有权

    公开(公告)号：US20210391363A1

    公开(公告)日：2021-12-16

    申请号：US16901894

    申请日：2020-06-15

    申请人： OmniVision Technologies, Inc.

    发明人： Chun-Yung Ai ,  Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia

    IPC分类号： H01L27/146 ,  G03B13/36

    摘要： A multi-pixel detector of an image sensor is described. The multi-pixel detector includes a first photodiode region disposed within a semiconductor substrate to form a first pixel, a second photodiode region disposed within the semiconductor substrate to form a second pixel adjacent to the first pixel, and a partial isolation structure extending from a first side of the semiconductor substrate towards a second side of the semiconductor substrate between the first photodiode region and the second photodiode region. A length of a lateral portion of the partial isolation structure between the first photodiode region and the second photodiode region is less than a lateral length of the first photodiode region.

    Source follower device for enhanced image sensor performance
    2.
    发明授权
    Source follower device for enhanced image sensor performance 有权

    公开(公告)号：US10304882B1

    公开(公告)日：2019-05-28

    申请号：US15828217

    申请日：2017-11-30

    申请人： OmniVision Technologies, Inc.

    发明人： Kazufumi Watanabe ,  Young Woo Jung ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC分类号： H01L21/336 ,  H01L27/146 ,  H04N5/3745 ,  H01L29/10 ,  H01L29/78 ,  H01L29/49

    摘要： An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.

    Self-aligned isolation structures and light filters
    6.
    发明授权
    Self-aligned isolation structures and light filters 有权
    自对准隔离结构和滤光片

    公开(公告)号：US09520431B2

    公开(公告)日：2016-12-13

    申请号：US14505923

    申请日：2014-10-03

    申请人： OMNIVISION TECHNOLOGIES, INC.

    发明人： Wei Zheng ,  Chia-Ying Liu ,  Chun-Yung Ai ,  Wu-Zang Yang ,  Chih-Wei Hsiung ,  Chen-Wei Lu

    IPC分类号： H01L27/00 ,  H01L27/146

    CPC分类号： H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

    摘要： An image sensor includes a semiconductor layer with a plurality of photodiodes. A plurality of isolation structures is disposed in the back side of the semiconductor layer between individual photodiodes in the plurality of photodiodes. The plurality of isolation structures extend into the back side of the semiconductor layer a first depth and extend out of the back side of the semiconductor layer a first length. A plurality of light filters is disposed proximate to the back side of the semiconductor layer such that the plurality of isolation structures is disposed between individual light filters in the plurality of light filters. An antireflection coating is also disposed between the semiconductor layer and the plurality of light filters.

    摘要翻译： 图像传感器包括具有多个光电二极管的半导体层。 多个隔离结构设置在多个光电二极管中的各个光电二极管之间的半导体层的背面。 多个隔离结构延伸到半导体层的背面第一深度并从半导体层的后侧延伸出第一长度。 多个滤光器设置在半导体层的背面附近，使得多个隔离结构设置在多个滤光器中的各个滤光器之间。 在半导体层和多个滤光器之间还设置防反射涂层。

    BLUE ENHANCED IMAGE SENSOR
    7.
    发明申请
    BLUE ENHANCED IMAGE SENSOR 有权
    蓝增强图像传感器

    公开(公告)号：US20160211295A1

    公开(公告)日：2016-07-21

    申请号：US14601010

    申请日：2015-01-20

    申请人： OMNIVISION TECHNOLOGIES, INC.

    发明人： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

    摘要： A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

    摘要翻译： 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。

    Stacked integrated circuit system with thinned intermediate semiconductor die
    8.
    发明授权
    Stacked integrated circuit system with thinned intermediate semiconductor die 有权
    具有薄型中间半导体芯片的堆叠集成电路系统

    公开(公告)号：US09391111B1

    公开(公告)日：2016-07-12

    申请号：US14820992

    申请日：2015-08-07

    申请人： OMNIVISION TECHNOLOGIES, INC.

    发明人： Keiji Mabuchi ,  Chih-Wei Hsiung

    IPC分类号： H01L23/02 ,  H01L27/146

    CPC分类号： H01L27/14634 ,  H01L27/14601 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645

    摘要： An intermediate integrated circuit die of a stacked integrated circuit system includes an intermediate semiconductor substrate including first polarity dopants is thinned from a second side. A first well including first polarity dopants is disposed in the intermediate semiconductor proximate to a first side. A second well including second polarity dopants is disposed in the intermediate semiconductor substrate proximate to the first side. A deep well having second polarity dopants is disposed in the intermediate semiconductor substrate beneath the first and second wells. An additional implant of first polarity dopants is implanted into the intermediate semiconductor substrate between the deep well and the second side of the intermediate semiconductor substrate to narrow a depletion region overlapped by the additional implant of first polarity dopants. The depletion region is between the deep well and the second side of the intermediate semiconductor substrate.

    摘要翻译： 堆叠集成电路系统的中间集成电路管芯包括中间半导体衬底，其包括第一极性掺杂剂从第二侧变薄。 包括第一极性掺杂剂的第一阱设置在靠近第一侧的中间半导体中。 包括第二极性掺杂剂的第二阱设置在靠近第一侧的中间半导体衬底中。 具有第二极性掺杂剂的深井设置在第一和第二阱下面的中间半导体衬底中。 将第一极性掺杂剂的另外的注入植入到中间半导体衬底的深阱和第二侧之间的中间半导体衬底中，以缩小由第一极性掺杂剂的附加注入重叠的耗尽区。 耗尽区位于中间半导体衬底的深阱和第二侧之间。