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    Negatively biased isolation structures for pixel devices
    2.
    发明授权
    Negatively biased isolation structures for pixel devices 有权

    公开(公告)号：US11502120B2

    公开(公告)日：2022-11-15

    申请号：US16721320

    申请日：2019-12-19

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Young Woo Jung ,  Geunsook Park ,  Lindsay Alexander Grant

    IPC: H01L27/146

    Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

    IMAGE SENSOR WITH SHARED GATE ARCHITECTURE FOR METAL LAYER REDUCTION
    3.
    发明申请
    IMAGE SENSOR WITH SHARED GATE ARCHITECTURE FOR METAL LAYER REDUCTION 有权

    公开(公告)号：US20240405039A1

    公开(公告)日：2024-12-05

    申请号：US18204261

    申请日：2023-05-31

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Yaxin Zheng ,  Takayuki Goto ,  Rui Wang ,  Kazufumi Watanabe

    IPC: H01L27/146

    Abstract: An image sensor comprising a semiconductor substrate, a first source region, a second source region, and a shared gate electrode is described. The semiconductor substrate includes a first side and a second side opposite the first side. The first source region and the second source region are each disposed within the semiconductor substrate proximate to the first side. The first source region is separated from the second source region by an isolation structure disposed within the semiconductor substrate between the first source region and the second source region. The shared gate electrode is disposed proximate to the first side of the semiconductor substrate and coupled to the first source region and the second source region to respectively form a first transistor and a second transistor.

    BACKSIDE DEEP TRENCH ISOLATION STRUCTURE FOR LEAKAGE SUPPRESSION
    4.
    发明申请
    BACKSIDE DEEP TRENCH ISOLATION STRUCTURE FOR LEAKAGE SUPPRESSION 有权

    公开(公告)号：US20240387567A1

    公开(公告)日：2024-11-21

    申请号：US18318482

    申请日：2023-05-16

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chun-Yung Ai ,  Kazufumi Watanabe ,  Chih-Wei Hsiung

    IPC: H01L27/146

    Abstract: A pixel array substrate includes a semiconductor substrate including a pixel array, a first side, and a second side opposite the first side, a guard ring region in the semiconductor substrate, formed of a doped semiconductor, enclosing the pixel array, and extending into the semiconductor substrate from the first side, and a peripheral region in the semiconductor substrate and enclosing the guard ring region. The peripheral region includes at least one device and a deep trench isolation (DTI) structure region disposed between the guard ring region and the at least one device and proximate to the second side of the semiconductor substrate. The DTI structure region is configured to block an electric current path between a P-N junction in the guard ring region and the at least one device.

    Cross talk reduction for high dynamic range image sensors
    5.
    发明授权
    Cross talk reduction for high dynamic range image sensors 有权

    公开(公告)号：US10204951B2

    公开(公告)日：2019-02-12

    申请号：US15882925

    申请日：2018-01-29

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Hsin-Chih Tai ,  Lindsay Alexander Grant

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

    Cross talk reduction for high dynamic range image sensors
    6.
    发明授权
    Cross talk reduction for high dynamic range image sensors 有权

    公开(公告)号：US10181490B2

    公开(公告)日：2019-01-15

    申请号：US15478085

    申请日：2017-04-03

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/378

    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

    IMAGE SENSOR WITH MULTI-PIXEL DETECTOR AND PARTIAL ISOLATION STRUCTURE
    8.
    发明申请
    IMAGE SENSOR WITH MULTI-PIXEL DETECTOR AND PARTIAL ISOLATION STRUCTURE 有权

    公开(公告)号：US20210391363A1

    公开(公告)日：2021-12-16

    申请号：US16901894

    申请日：2020-06-15

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chun-Yung Ai ,  Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia

    IPC: H01L27/146 ,  G03B13/36

    Abstract: A multi-pixel detector of an image sensor is described. The multi-pixel detector includes a first photodiode region disposed within a semiconductor substrate to form a first pixel, a second photodiode region disposed within the semiconductor substrate to form a second pixel adjacent to the first pixel, and a partial isolation structure extending from a first side of the semiconductor substrate towards a second side of the semiconductor substrate between the first photodiode region and the second photodiode region. A length of a lateral portion of the partial isolation structure between the first photodiode region and the second photodiode region is less than a lateral length of the first photodiode region.

    Source follower device for enhanced image sensor performance
    9.
    发明授权
    Source follower device for enhanced image sensor performance 有权

    公开(公告)号：US10304882B1

    公开(公告)日：2019-05-28

    申请号：US15828217

    申请日：2017-11-30

    Applicant: OmniVision Technologies, Inc.

    Inventor： Kazufumi Watanabe ,  Young Woo Jung ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

    IPC: H01L21/336 ,  H01L27/146 ,  H04N5/3745 ,  H01L29/10 ,  H01L29/78 ,  H01L29/49

    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.

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