公开(公告)号：US10727645B2

公开(公告)日：2020-07-28

申请号：US16075853

申请日：2017-03-13

Applicant: OSRAM OLED GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler

IPC: H01S5/06 ,  H01L33/50 ,  F21K9/64 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  H01L33/18 ,  F21Y115/30

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.