公开(公告)号：US20220208816A1

公开(公告)日：2022-06-30

申请号：US17695422

申请日：2022-03-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji HIRASE ,  Masaaki YANAGIDA ,  Kazuko NISHIMURA ,  Yoshinori TAKAMI

IPC: H01L27/146

Abstract: An imaging apparatus comprises a semiconductor substrate, a photoelectric converter, a charge storage region, and an amplification transistor. The photoelectric converter includes a pixel electrode, a counter electrode, and a photoelectric conversion layer. The photoelectric conversion layer is positioned above the semiconductor substrate and is disposed between the pixel electrode and the counter electrode. Charge generated by the photoelectric converter is stored in the charge storage region. The amplification transistor includes a source, a drain, and a gate electrode. The gate electrode is electrically connected to the charge storage region. In a plan view, the width of the drain of the amplification transistor is less than the width of the source of the amplification transistor.

公开(公告)号：US20190273880A1

公开(公告)日：2019-09-05

申请号：US16410893

申请日：2019-05-13

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Junji HIRASE ,  Yoshihiro SATO ,  Yoshinori TAKAMI ,  Masayuki TAKASE ,  Masashi MURAKAMI

IPC: H04N5/361 ,  H04N5/363 ,  H04N5/359 ,  H04N5/3745 ,  H04N5/369 ,  H01L27/146

Abstract: An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

公开(公告)号：US20240387570A1

公开(公告)日：2024-11-21

申请号：US18787407

申请日：2024-07-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masashi MURAKAMI ,  Kazuko NISHIMURA ,  Yutaka ABE ,  Yoshiyuki MATSUNAGA ,  Yoshihiro SATO ,  Junji HIRASE

IPC: H01L27/146 ,  H10K30/00

Abstract: A camera system including a lens; and an imaging device that receives a light through the lens. The imaging device includes: a semiconductor substrate; a photoelectric converter that is configured to convert the light into a signal charge and that is stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first state and a second state, a sensitivity in the first state being different from a sensitivity in the second state, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

公开(公告)号：US20220094868A1

公开(公告)日：2022-03-24

申请号：US17539938

申请日：2021-12-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro SATO ,  Junji HIRASE

IPC: H04N5/363 ,  H04N5/378 ,  H04N5/361 ,  H04N5/374 ,  H01L27/146

Abstract: An imaging device including: a semiconductor substrate; pixels arranged in a first direction; and a signal line that extends in the first direction. Each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a region into which the signal charge is input, a first transistor that outputs a signal to the signal line according to an amount of the signal charge input into the region, and a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and a first insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. Further, the signal line is located closer to the semiconductor substrate than the first capacitive element is.

公开(公告)号：US20220059584A1

公开(公告)日：2022-02-24

申请号：US17518058

申请日：2021-11-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Junji HIRASE ,  Yoshinori TAKAMI ,  Yoshihiro SATO

IPC: H01L27/146 ,  H04N5/369 ,  H01L27/30

Abstract: An imaging device, including a photoelectric converter that generates a signal charge by photoelectric conversion of light; and a semiconductor substrate. The semiconductor substrate includes: a charge accumulation region that is an impurity region of a first conductivity type, and configured to accumulate the signal charge; a first impurity region of the first conductivity type, the first impurity region being one of a source or a drain of a first transistor and adjacent to the charge accumulation region; and a blocking structure located between the charge accumulation region and the first impurity region. The blocking structure includes a second impurity region of a second conductivity type different from the first conductivity type, a part of the second impurity region located on a surface of the semiconductor substrate, and the second impurity region is not in contact with the first impurity region on the surface of the semiconductor substrate.

公开(公告)号：US20180166479A1

公开(公告)日：2018-06-14

申请号：US15878902

申请日：2018-01-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Masashi MURAKAMI ,  Kazuko NISHIMURA ,  Yutaka ABE ,  Yoshiyuki MATSUNAGA ,  Yoshihiro SATO ,  Junji HIRASE

IPC: H01L27/146 ,  H01L51/42

CPC classification number: H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L51/42

Abstract: An imaging device includes a unit pixel cell including: a photoelectric converter that generates a signal charge through photoelectric conversion of incident light, and a signal detection circuit that detects an electric signal according to an amount of the signal charge, wherein the signal detection circuit includes: a first transistor that amplifies the electric signal, a gate of the first transistor being connected to the photoelectric converter, a second transistor having a source and a drain, one of the source and the drain being connected to the photoelectric converter, and a first capacitor having a first end and a second end, the first end being connected to the other of the source and the drain of the second transistor, the second end being connected to a first voltage source.

公开(公告)号：US20190166319A1

公开(公告)日：2019-05-30

申请号：US16243921

申请日：2019-01-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro SATO ,  Junji HIRASE

IPC: H04N5/363 ,  H04N5/374 ,  H04N5/361 ,  H01L27/146 ,  H04N5/378

Abstract: An imaging device includes first and second pixels, arranged in a first direction, each of which includes: a photoelectric converter converting incident light into signal charge; an impurity region, in a semiconductor substrate, coupled to the photoelectric converter; a first transistor having a first gate coupled to the impurity region, and first source and drain; and a second transistor having second gate, source and drain. One of the second source and the second drain is the impurity region, and another is coupled to the first source or the first drain. The imaging device further includes a signal line, coupled to the first source or the first drain, and extends along the first direction and overlaps with both of the first and second pixels. The signal line is located on an opposite side from the impurity region across a center line of the first pixel.

公开(公告)号：US20190081099A1

公开(公告)日：2019-03-14

申请号：US16186243

申请日：2018-11-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko TAMAKI ,  Junji HIRASE ,  Shigeo YOSHII

IPC: H01L27/146

Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.

公开(公告)号：US20180331149A1

公开(公告)日：2018-11-15

申请号：US16045557

申请日：2018-07-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro SATO ,  Junji HIRASE

IPC: H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14665 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/307

Abstract: An imaging device including a semiconductor substrate having a surface, the semiconductor substrate including a first region of a first conductivity type and a pixel. The pixel includes a photoelectric converter; a first transistor including a second region of a second conductivity type different from the first conductivity type as a source or a drain and a first electrode as a gate, the second region being located in the semiconductor substrate and being adjacent to the first region, the first electrode being located above the surface; a contact plug coupled to the second region; and a second electrode located above the surface; wherein when seen in a direction perpendicular to the surface, a contact point between the contact plug and the second region is located between the first electrode and the second electrode.

公开(公告)号：US20180114811A1

公开(公告)日：2018-04-26

申请号：US15850645

申请日：2017-12-21

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Yoshihiro SATO ,  Ryohei MIYAGAWA ,  Tokuhiko TAMAKI ,  Junji HIRASE ,  Yoshiyuki OHMORI ,  Yoshiyuki MATSUNAGA

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/363 ,  H01L21/266 ,  H01L21/8234

CPC classification number: H01L27/14643 ,  H01L21/266 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14665 ,  H01L27/14689 ,  H04N5/363 ,  H04N5/378

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.