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11.
公开(公告)号:US20230078828A1
公开(公告)日:2023-03-16
申请号:US17913089
申请日:2020-03-31
Inventor: Yutaka HIROSE , Yusuke YUASA , Shigeru SAITOU , Shinzo KOYAMA , Akihiro ODAGAWA , Masayuki SAWADA
Abstract: An information processing system includes an object information generator and an output unit. The object information generator generates object information. A piece of the object information indicates a feature of an object present in a target distance section. The target distance section is one selected from a plurality of distance sections defined by dividing the distance measurable range in accordance with differences in elapsed times from a point of time when a light emitting unit emits a measuring light. The object information generator generates the piece of the object information based on a distance section signal associated with the target distance section. The output unit outputs the object information.
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公开(公告)号:US20180190706A1
公开(公告)日:2018-07-05
申请号:US15909413
申请日:2018-03-01
Inventor: Mitsuyoshi MORI , Ryohei MIYAGAWA , Yoshiyuki OHMORI , Yoshihiro SATO , Yutaka HIROSE , Yusuke SAKATA , Toru OKINO
IPC: H01L27/146 , H01L27/30
CPC classification number: H01L27/14636 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/307
Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.
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公开(公告)号:US20170345865A1
公开(公告)日:2017-11-30
申请号:US15678790
申请日:2017-08-16
Inventor: Yusuke SAKATA , Mitsuyoshi MORI , Yutaka HIROSE , Hiroshi MASUDA , Hitoshi KURIYAMA , Ryohei MIYAGAWA
IPC: H01L27/148 , H01L27/146 , H01L21/768 , H01L23/485
CPC classification number: H01L27/14806 , H01L21/76886 , H01L23/485 , H01L27/1463 , H01L27/14643 , H01L27/14665 , H01L2924/00 , H01L2924/0002
Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.
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公开(公告)号:US20170229599A1
公开(公告)日:2017-08-10
申请号:US15328648
申请日:2015-07-09
Inventor: Yusuke SAKATA , Manabu USUDA , Mitsuyoshi MORI , Yutaka HIROSE , Yoshihisa KATO
IPC: H01L31/107 , H01L27/146
CPC classification number: H01L31/1075 , H01L27/14609 , H01L27/1461 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14647 , H01L31/107 , H02S40/44
Abstract: A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p− type semiconductor layer having interfaces; an n+ type semiconductor region located inside the p− type semiconductor layer and in contact with the interface; an n+ type semiconductor region located inside the p− type semiconductor layer and connected to the n+ type semiconductor region; and a p type semiconductor region located between the n+ type semiconductor region and the interface, wherein the n+ type semiconductor region, the n+ type semiconductor region, and the p type semiconductor region each have a higher impurity concentration than the p− type semiconductor layer, the avalanche region is a region between the n+ type semiconductor region and the p type semiconductor region inside the p− type semiconductor layer, and the n+ type semiconductor region has a smaller area than the n+ type semiconductor region in planar view.
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公开(公告)号:US20170094206A1
公开(公告)日:2017-03-30
申请号:US15377613
申请日:2016-12-13
Inventor: Keisuke YAZAWA , Motonori ISHII , Yutaka HIROSE , Yoshihisa KATO , Yoshiyuki MATSUNAGA
CPC classification number: H04N5/363 , H01L27/307 , H04N5/374 , H04N5/3741 , H04N5/3745 , H04N5/378
Abstract: A solid-state imaging apparatus includes a pixel including: a photoelectric converter that generates a signal charge corresponding to incident light; a charge storage section that is connected to the photoelectric converter and accumulates signal charge; a reset transistor; an amplifying transistor; and a cutoff transistor, wherein the amplifying transistor and the cutoff transistor form a negative feedback amplifying circuit.
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公开(公告)号:US20240284072A1
公开(公告)日:2024-08-22
申请号:US18650988
申请日:2024-04-30
Inventor: Yutaka HIROSE
IPC: H04N25/773 , G01S7/4863
CPC classification number: H04N25/773 , G01S7/4863
Abstract: An imaging element includes a light source and a plurality of pixels. Each of the plurality of pixels includes: a light-receiving element; a first capacitor, and a charge emitter provided in each of the plurality of pixels, the charge emitter being configured to emit a charge to the first capacitor for a certain period of time ΔT when the light-receiving element detects light emitted from the light source and reflected by a subject.
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公开(公告)号:US20230353897A1
公开(公告)日:2023-11-02
申请号:US18212037
申请日:2023-06-20
Inventor: Motonori ISHII , Yoshiyuki MATSUNAGA , Yutaka HIROSE
IPC: H04N25/65 , H04N25/75 , H04N25/77 , H04N25/767
CPC classification number: H04N25/65 , H04N25/75 , H04N25/77 , H04N25/767
Abstract: An imaging device including a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second transistor.
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公开(公告)号:US20230299114A1
公开(公告)日:2023-09-21
申请号:US18325709
申请日:2023-05-30
Inventor: Akito INOUE , Yutaka HIROSE
IPC: H01L27/146 , G01S7/481
CPC classification number: H01L27/14645 , H01L27/14636 , H01L27/14616 , G01S7/4816
Abstract: A photodetector includes: a single-photon avalanche diode (SPAD); and a first resistor connected in series to the SPAD. In a recharge period in which an electric charge is discharged from the SPAD via the first resistor, an electric charge disappears from a multiplication region in the SPAD.
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公开(公告)号:US20220109800A1
公开(公告)日:2022-04-07
申请号:US17551720
申请日:2021-12-15
Inventor: Yoshiaki SATOU , Shota YAMADA , Masashi MURAKAMI , Yutaka HIROSE
Abstract: An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.
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公开(公告)号:US20220011437A1
公开(公告)日:2022-01-13
申请号:US17486863
申请日:2021-09-27
Inventor: Shinzo KOYAMA , Yutaka HIROSE , Toru OKINO , Shigeru SAITOU , Motonori ISHII , Akihiro ODAGAWA
IPC: G01S17/894 , G01S17/36 , G01S7/4865
Abstract: A distance measuring device includes a control unit and a measuring unit. The control unit controls a photodetector unit. The photodetector unit includes a photoelectric transducer element and an output unit. The photoelectric transducer element generates electrical charges on receiving light reflected from a target as a part of measuring light emitted from a light-emitting unit. The output unit outputs an electrical signal representing a quantity of the electrical charges generated by the photoelectric transducer element. The measuring unit calculates, in accordance with the electrical signal, a distance to the target within a measurable range. The control unit sets, in each of a plurality of intervals that form the measurable range, a conversion ratio of the quantity of the electrical charges generated by the photoelectric transducer element to a quantity of the light received by the photoelectric transducer element.
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