公开(公告)号：US20220191424A1

公开(公告)日：2022-06-16

申请号：US17683465

申请日：2022-03-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shota YAMADA ,  Motonori ISHII ,  Shigetaka KASUGA ,  Masato TAKEMOTO ,  Yutaka HIROSE

IPC: H04N5/3745 ,  H04N5/357

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a signal processing part configured to process a detection signal outputted from each of the pixel cells. The pixel cells each include an avalanche photodiode and output a voltage corresponding to a count number of photons received by the avalanche photodiode as the detection signal. The signal processing part includes a variation calculation part configured to calculate a variation between the pixel cells in the detection signal outputted from each of the pixel cells, and a correction calculation part configured to correct the detection signal outputted from each of the pixel cells, on the basis of the variation calculated by the variation calculation part.

公开(公告)号：US20220182572A1

公开(公告)日：2022-06-09

申请号：US17679942

申请日：2022-02-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shota YAMADA ,  Shigetaka KASUGA ,  Motonori ISHII ,  Akito INOUE ,  Yutaka HIROSE

IPC: H04N5/3745 ,  G01S17/894 ,  G01S7/4865 ,  G01S7/481

Abstract: An imaging device includes: a solid-state imaging element having a plurality of pixel cells arranged in a matrix; and a control part configured to control the solid-state imaging element. The pixel cells each include an avalanche photodiode, a floating diffusion part configured to accumulate electric charges, a transfer transistor connecting a cathode of the avalanche photodiode and the floating diffusion part, and a reset transistor for resetting electric charges accumulated in the floating diffusion part. The control part controls the reset transistor to discharge electric charges exceeding a predetermined electric charge amount, of electric charges accumulated in the floating diffusion part from the cathode of the avalanche photodiode via the transfer transistor.

公开(公告)号：US20210092316A1

公开(公告)日：2021-03-25

申请号：US17111219

申请日：2020-12-03

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Motonori ISHII ,  Yoshiyuki MATSUNAGA ,  Yutaka HIROSE

IPC: H04N5/363 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/378

Abstract: An imaging device including: a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a second transistor that, has a source and a drain, an output of the first transistor being fed back to one of the source and the drain and being supplied to the charge storage region from the other of the source and the drain; and voltage supply circuitry that supplies voltages varying with time. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies the voltages to a gate of the second. transistor so that the second transistor gradually changes from an OFF state to an ON state.

公开(公告)号：US20190013349A1

公开(公告)日：2019-01-10

申请号：US16109473

申请日：2018-08-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke SAKATA ,  Mitsuyoshi MORI ,  Yutaka HIROSE ,  Hiroshi MASUDA ,  Hitoshi KURIYAMA ,  Ryohei MIYAGAWA

IPC: H01L27/148 ,  H01L27/146 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L27/14806 ,  H01L21/76886 ,  H01L23/485 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14665 ,  H01L2924/00 ,  H01L2924/0002

Abstract: A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.

公开(公告)号：US20180292347A1

公开(公告)日：2018-10-11

申请号：US16005995

申请日：2018-06-12

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Toru OKINO ,  Yutaka HIROSE ,  Yoshihisa KATO ,  Akio OKI

IPC: G01N27/403

Abstract: A gas sensor includes: a cell array which includes a plurality of cells disposed in rows and columns; a read-out circuit which reads out signals from the plurality of cells; and a signal processor which processes the signals read out. Each of the plurality of cells includes: a gas molecule detector which is electrically isolated between adjacent ones of the plurality of cells; and an amplifier circuit which is electrically connected to the gas molecule detector.

公开(公告)号：US20170170226A1

公开(公告)日：2017-06-15

申请号：US15441568

申请日：2017-02-24

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Mitsuyoshi MORI ,  Ryohei MIYAGAWA ,  Yoshiyuki OHMORI ,  Yoshihiro SATO ,  Yutaka HIROSE ,  Yusuke SAKATA ,  Toru OKINO

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/307

Abstract: A solid-state imaging device according to the present disclosure includes: a charge storage region that stores a signal charge obtained through photoelectric conversion in a photoelectric conversion film; an amplification transistor that amplifies the signal charge stored in the charge storage region in a corresponding pixel; a contact plug that is electrically connected to the charge storage region and contains a semiconductor material; and a line that is disposed above the contact plug and contains a semiconductor material. The contact plug and the charge storage region are electrically connected, and the contact plug and a gate electrode of the amplification transistor are electrically connected via the line.

公开(公告)号：US20250080870A1

公开(公告)日：2025-03-06

申请号：US18951132

申请日：2024-11-18

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Motonori ISHII ,  Yoshiyuki MATSUNAGA ,  Yutaka HIROSE

IPC: H04N25/65 ,  H04N25/75 ,  H04N25/767 ,  H04N25/77

Abstract: An imaging device including a photoelectric converter that generates signal charge; a charge storage region that stores the signal charge; a first transistor that has a gate coupled to the charge storage region and reads out the signal charge; a feedback amplifier that feeds back an output of the first transistor in a negative feedback manner to the charge storage region, the feedback amplifier having two input terminals, the output of the first transistor being input to a first input terminal, a reference voltage being input to a second input terminal; and voltage supply circuitry. In a reset operation for discharging the signal charge stored in the charge storage region, the voltage supply circuitry supplies voltages to the second input terminal of the feedback amplifier, and the voltages include at least three voltages different from each other.

公开(公告)号：US20230164462A1

公开(公告)日：2023-05-25

申请号：US18100401

申请日：2023-01-23

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naoki TORAZAWA ,  Tatsuya KABE ,  Yutaka HIROSE

IPC: H04N25/77 ,  H01L27/146

CPC classification number: H04N25/77 ,  H01L27/14643

Abstract: A photodetector includes a semiconductor substrate; a photoelectric converter in the semiconductor substrate; and a condenser light-transmissive and opposed to the photoelectric converter. The condenser includes: an inorganic material layer at least partially overlapping the photoelectric converter in a plan view; and an inorganic material layer covering the inorganic material layer and having a refractive index lower than a refractive index of the inorganic material layer.

公开(公告)号：US20210368119A1

公开(公告)日：2021-11-25

申请号：US17274133

申请日：2019-09-05

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yutaka HIROSE ,  Akihiro ODAGAWA ,  Shinzo KOYAMA

IPC: H04N5/378 ,  H04N5/3745 ,  H04N5/351

Abstract: A solid-state image sensor capable of detecting a photon and having smaller circuit scale is provided. The solid-state image sensor includes a pixel array including a plurality of pixel cells, a pixel driving circuit configured to drive the plurality of pixel cells, a readout circuit, and a plurality of readout wires corresponding to respective columns of the pixel cell. Each of the plurality of pixel cells includes an avalanche photodiode configured to detect a photon by avalanche multiplication occurring when one photon enters, and a transfer transistor configured to transfer a detection result of the photon to the corresponding readout wire. The readout circuit determines whether a photon is detected or not, and outputs a determination result.

公开(公告)号：US20200152690A1

公开(公告)日：2020-05-14

申请号：US16744010

申请日：2020-01-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yusuke SAKATA ,  Mitsuyoshi MORI ,  Yutaka HIROSE ,  Hiroshi MASUDA ,  Hitoshi KURIYAMA ,  Ryohei MIYAGAWA

IPC: H01L27/148 ,  H01L27/146

Abstract: An imaging device includes: a photoelectric converter which converts light into signal charges; a charge accumulation region which is electrically connected to the photoelectric converter, and accumulates the signal charges; a transistor having a gate electrode which is electrically connected to the charge accumulation region; and a contact plug which electrically connects the photoelectric converter to the charge accumulation region, is in direct contact with the charge accumulation region, and comprises a semiconductor material.