Method for making elemental semiconductor mirror for vehicles
    11.
    发明授权
    Method for making elemental semiconductor mirror for vehicles 失效
    制造车辆元素半导体镜的方法

    公开(公告)号:US5535056A

    公开(公告)日:1996-07-09

    申请号:US700760

    申请日:1991-05-15

    摘要: A elemental mirror for vehicles having a luminous reflectance of at least about 30% includes a substrate coated with a thin layer of elemental semiconductor having an index of refraction of at least 3 and an optical thickness of at least about 275 angstroms. Preferably, the elemental semiconductor coating is sputter coated silicon or germanium and a light absorbing coating is included therebehind. The mirror is spectrally nonselective with elemental semiconductor optical thicknesses of about 275 to 2400 angstroms on the front substrate surface. Spectrally selective mirrors are provided by adding an interference coating to the elemental semiconductor layer coating, preferably of a dielectric such as silicon dioxide or silicon nitride, on either the front or rear substrate surface, or by using a thicker, single elemental semiconductor layer. Instead of an absorbing coating behind the mirror, additional elemental semiconductor and dielectric thin layers may be included to reduce secondary reflections. The method includes coating the thin elemental semiconductor layer on flat glass and heating to harden the layer and make it more scratch resistant, or heating and bending the glass without destroying the reflective properties of the mirror. The thin interference layer, secondary reflection reducing layers, and/or light absorbing coating may be coated before or after heating and bending.

    摘要翻译: 具有至少约30%的光反射率的车辆的元素反射镜包括涂覆有折射率至少为3并且至少约275埃的光学厚度的元素半导体薄层的基底。 优选地,元素半导体涂层是溅射涂覆的硅或锗,并且包括光吸收涂层。 镜子是光谱非选择性的,在前衬底表面上的元素半导体光学厚度为约275至2400埃。 通过在衬底表面或后衬底表面上添加干涉涂层来提供元素半导体层涂层,优选电介质如二氧化硅或氮化硅,或通过使用较厚的单个元素半导体层来提供光谱选择性反射镜。 代替反射镜后面的吸收涂层,可以包括另外的元素半导体和电介质薄层以减少次级反射。 该方法包括在平板玻璃上涂覆薄的元素半导体层并加热以使层硬化,使其更具耐擦伤性,或加热和弯曲玻璃而不破坏反射镜的反射特性。 可以在加热和弯曲之前或之后涂覆薄的干涉层,二次反射减少层和/或光吸收涂层。

    Elemental semiconductor mirror
    12.
    发明授权
    Elemental semiconductor mirror 失效
    元素半导体镜

    公开(公告)号:US6065840A

    公开(公告)日:2000-05-23

    申请号:US313152

    申请日:1999-05-17

    IPC分类号: B60R1/08 G02B5/08

    摘要: An elemental mirror having a high luminous reflectance of at least about 60% of incident light at the wavelength region of about 550 nanometers and being acromatic includes a substrate coated with a reflector comprising a multilayer thin film stack. The thin film stack comprises a first thin film layer of an elemental semiconductor which is closest to the first surface of the glass substrate and has a refractive index of greater than 3.0, a second thin film layer which is farthest from the first surface of the glass substrate, and a third thin film layer disposed between the first thin film layer and the second thin film layer, the third thin film layer having a refractive index between about 1.3 and 2.7, the second thin film layer having a refractive index greater than the third thin film layer. A light absorbing coating is included on at least one surface of the substrate and a layer of the reflector, the light absorbing coating absorbing light transmitted by the reflector coated substrate. Alternately, the multilayer thin film stack may be coated on the second surface of the glass substrate with the light absorbing coating disposed on the reflector coated second surface of the glass substrate. The elemental semiconductor may comprise silicon or germanium. The light absorbing coating may comprise one of a paint, a lacquer, a tape, a ceramic, a hot melt plastic, a resinous plastic, a plastisol, or an epoxy material.

    摘要翻译: 具有至少约60%入射光的波长区域约为550纳米且为芳香族的具有高光反射率的元素反射镜包括涂覆有包括多层薄膜叠层的反射器的基底。 薄膜叠层包括最靠近玻璃基板的第一表面并具有大于3.0的折射率的元素半导体的第一薄膜层,距离玻璃的第一表面最远的第二薄膜层 衬底和设置在第一薄膜层和第二薄膜层之间的第三薄膜层,第三薄膜层的折射率在约1.3和2.7之间,第二薄膜层具有大于第三薄膜层的折射率 薄膜层。 在基板的至少一个表面和反射器的一个表面上包括光吸收涂层,光吸收涂层吸收由反射器涂覆的基板透射的光。 或者,多层薄膜堆叠可以涂覆在玻璃基板的第二表面上,其中光吸收涂层设置在玻璃基板的反射器涂覆的第二表面上。 元素半导体可以包括硅或锗。 光吸收涂层可以包括涂料,漆,胶带,陶瓷,热熔塑料,树脂塑料,增塑溶胶或环氧材料中的一种。

    Iridium oxide film for electrochromic device
    13.
    发明授权
    Iridium oxide film for electrochromic device 失效
    电致变色器件氧化铱膜

    公开(公告)号:US5798860A

    公开(公告)日:1998-08-25

    申请号:US782992

    申请日:1997-01-14

    CPC分类号: C09K9/00 G02F1/1527

    摘要: Describes an electrochromically active iridium oxide film of iridium, oxygen and nitrogen, wherein the ratio of atomic oxygen to iridium is from 3.2:1 to 3.4:1 and the amount of nitrogen in the film is from 11 to 13 atomic percent. Describes also an electrochromic article, e.g., a plastic article such as a plastic lens, in which the aforedescribed iridium oxide film is paired with a cathodically coloring electrochromic film, such as tungsten oxide.

    摘要翻译: 描述了铱,氧和氮的电致变色氧化铱膜,其中原子氧与铱的比例为3.2:1至3.4:1,并且膜中氮的量为11至13原子%。 还描述了电致变色制品,例如塑料制品,例如塑料透镜,其中上述氧化铱膜与阴极着色电致变色膜如氧化钨配对。

    Iridium oxide film for electrochromic device
    14.
    发明授权
    Iridium oxide film for electrochromic device 失效
    电致变色器件氧化铱膜

    公开(公告)号:US5520851A

    公开(公告)日:1996-05-28

    申请号:US337783

    申请日:1994-11-14

    摘要: A method of depositing a nitrogen-containing electrochromic iridium oxide film by sputtering iridium in an atmosphere comprising oxygen and nitrogen is disclosed for use in producing a transparent electrochromic article. The article includes electroconductive films, e.g., ITO, on two substrates, one of which has a superimposed electrochromic film, e.g., tungsten oxide, and the other of which has superimposed the iridium oxide film of the invention. An ion conductive layer between the electrochromic films completes the article.

    摘要翻译: 公开了一种通过在包含氧和氮的气氛中溅射铱来沉积含氮电致变色氧化铱膜的方法,用于制备透明电致变色制品。 该物品在两个基板上包括导电膜,例如ITO,其中一个具有叠加的电致变色膜,例如氧化钨,另一个叠加有本发明的氧化铱膜。 电致变色膜之间的离子传导层完成了制品。

    Elemental semiconductor mirror for vehicles and method for making same
    16.
    发明授权
    Elemental semiconductor mirror for vehicles and method for making same 失效
    用于车辆的元素半导体镜及其制造方法

    公开(公告)号:US06286965B1

    公开(公告)日:2001-09-11

    申请号:US09074810

    申请日:1998-05-08

    IPC分类号: G02B508

    摘要: A elemental mirror for vehicles having a luminous reflectance of at least about 30% includes a substrate coated with a thin layer of elemental semiconductor having an index of refraction of at least 3 and an optical thickness of at least about 275 angstroms. Preferably, the elemental semiconductor coating is sputter coated silicon or germanium and a light absorbing coating is included therebehind. The mirror is spectrally nonselective with elemental semiconductor optical thicknesses of about 275 to 2400 angstroms on the front substrate surface. Spectrally selective mirrors are provided by adding an interference coating to the elemental semiconductor layer coating, preferably of a dielectric such as silicon dioxide or silicon nitride, on either the front or rear substrate surface, or by using a thicker, single elemental semiconductor layer. Instead of an absorbing coating behind the mirror, additional elemental semiconductor and dielectric thin layers may be included to reduce secondary reflections. The method includes coating the thin elemental semiconductor layer on flat glass and heating to harden the layer and make it more scratch resistant, or heating and bending the glass without destroying the reflective properties of the mirror. The thin interference layer, secondary reflection reducing layers, and/or light absorbing coating may be coated before or after heating and bending.

    摘要翻译: 具有至少约30%的光反射率的车辆的元素反射镜包括涂覆有折射率至少为3并且至少约275埃的光学厚度的元素半导体薄层的基底。 优选地,元素半导体涂层是溅射涂覆的硅或锗,并且包括光吸收涂层。 镜子是光谱非选择性的,在前衬底表面上的元素半导体光学厚度为约275至2400埃。 通过在衬底表面或后衬底表面上添加干涉涂层来提供元素半导体层涂层,优选电介质如二氧化硅或氮化硅,或通过使用较厚的单个元素半导体层来提供光谱选择性反射镜。 代替反射镜后面的吸收涂层,可以包括另外的元素半导体和电介质薄层以减少次级反射。 该方法包括在平板玻璃上涂覆薄的元素半导体层并加热以使层硬化,使其更具耐擦伤性,或加热和弯曲玻璃而不破坏反射镜的反射特性。 可以在加热和弯曲之前或之后涂覆薄的干涉层,二次反射减少层和/或光吸收涂层。

    Method and apparatus for depositing thin films on vertical surfaces
    17.
    发明授权
    Method and apparatus for depositing thin films on vertical surfaces 有权
    用于在垂直表面上沉积薄膜的方法和装置

    公开(公告)号:US06210540B1

    公开(公告)日:2001-04-03

    申请号:US09518743

    申请日:2000-03-03

    申请人: Bryant P. Hichwa

    发明人: Bryant P. Hichwa

    IPC分类号: C23C1404

    CPC分类号: C23C14/044

    摘要: A mask is placed over a center portion of a deposition source to limit angle of the flux from the source. A substrate or device with a vertical surface (referenced to a major surface of the substrate or device) is rotated past the deposition source to coat the vertical surface with material from the source. In a particular embodiment, the source is a gold sputtering target and a mirror is formed on a vertical surface of a MEMS structure having a depth of about 70-75 microns and a set-back of about 200-250 microns by sputtering about 1000 Angstroms of gold onto the vertical surface.

    摘要翻译: 掩模放置在沉积源的中心部分上以限制来自源的通量的角度。 具有垂直表面(参考基底或装置的主表面)的基底或装置经过沉积源旋转以用来自源的材料涂覆垂直表面。 在特定实施例中,源是金溅射靶,并且通过溅射约1000埃,在具有约70-75微米的深度和约200-250微米的回退的MEMS结构的垂直表面上形成反射镜 的金子在垂直的表面上。

    Elemental semiconductor mirror
    18.
    发明授权
    Elemental semiconductor mirror 失效
    元素半导体镜

    公开(公告)号:US06196688B1

    公开(公告)日:2001-03-06

    申请号:US09533156

    申请日:2000-03-23

    IPC分类号: G02B508

    摘要: A mirror having a high luminous reflectance of at least about 60% of incident light at the wavelength region of about 550 nanometers and being acromatic includes a substrate coated with a reflector comprising a multilayer thin film stack. The thin film stack comprises a first thin film layer of an elemental semiconductor which is closest to the first surface of the glass substrate and has a refractive index of greater than 3.0, a second thin film layer which is farthest from the first surface of the glass substrate, and a third thin film layer disposed between the first thin film layer and the second thin film layer, the third thin film layer having a refractive index between about 1.3 and 2.7, the second thin film layer having a refractive index greater than the third thin film layer. A light absorbing coating is included on at least one surface of the substrate and a layer of the reflector, the light absorbing coating absorbing light transmitted by the reflector coated substrate. The elemental semiconductor may comprise silicon or germanium. The light absorbing coating may comprise one of a paint, a lacquer, a tape, a ceramic, a hot melt plastic, a resinous plastic, a plastisol, or an epoxy material.

    摘要翻译: 在约550纳米的波长区域具有至少约60%的入射光的高反射率的反射镜,其为芳香族,包括涂覆有包含多层薄膜叠层的反射器的基底。 薄膜叠层包括最靠近玻璃基板的第一表面并具有大于3.0的折射率的元素半导体的第一薄膜层,距玻璃的第一表面最远的第二薄膜层 衬底和设置在第一薄膜层和第二薄膜层之间的第三薄膜层,第三薄膜层的折射率在约1.3和2.7之间,第二薄膜层具有大于第三薄膜层的折射率 薄膜层。 在基板的至少一个表面和反射器的一个表面上包括光吸收涂层,光吸收涂层吸收由反射器涂覆的基板透射的光。 元素半导体可以包括硅或锗。 光吸收涂层可以包括涂料,漆,胶带,陶瓷,热熔塑料,树脂塑料,增塑溶胶或环氧材料中的一种。

    Variably adjustable contrast enhancement electrochromic panel adapted
for curved display screens and methods of making and using same
    19.
    发明授权
    Variably adjustable contrast enhancement electrochromic panel adapted for curved display screens and methods of making and using same 失效
    适用于弯曲显示屏的可变的对比度增强型电致变色面板及其制造和使用方法

    公开(公告)号:US5959762A

    公开(公告)日:1999-09-28

    申请号:US965000

    申请日:1997-11-05

    摘要: A flexible panel is provided that is easily and conformingly applied to a curved display screen of a VDU to afford, in a lightweight manner, variably adjustable contrast enhancement of the VDU while simultaneously providing a decrease in the amount of ambient light reflected from the curved display screen. The flexible panel is a glass microsheet layered, on one side thereof, with an antireflection coating and, on the other side, with an electrochromic device. The electrochrmic device allows for variable adjustment of the contrast of the VDU as a function of the voltage applied across the electrochromic device. The flexible glass microsheet dually possesses the advantages of conventional rigid glass panels, such as excellent optical performance, high durability, capability of being coated with various optical coatings under extreme temperature, pressure and chemical conditions and the additional benfeit of physical flexibility. This flexibility allows for easy application to variously sized and shaped curved VDU display screens. The electrochromic device is a six-layered structure deposited, in order from the layer adjacent the panel: a 1 quarter wavelength (QW) alumina layer; a first indium-tin-oxide (ITO) layer; a tungsten trioxide (WO.sub.3) layer; a tantalum pentoxide (Ta.sub.2 O.sub.5) layer; a nickel-oxide (NiO) layer; and a second indium-tin-oxide (ITO) layer.

    摘要翻译: 提供了一种灵活的面板,其容易且顺应地应用于VDU的弯曲显示屏,以轻便的方式提供VDU的可变的对比度增强,同时提供从弯曲显示器反射的环境光的量的减少 屏幕。 柔性面板是玻璃微片,其一侧上具有抗反射涂层,另一侧层叠有电致变色装置。 电磁装置允许根据施加在电致变色装置上的电压的函数可变地调整VDU的对比度。 柔性玻璃微片具有传统刚性玻璃面板的优点,例如优异的光学性能,高耐久性,在极端温度,压力和化学条件下涂覆各种光学涂层的能力以及额外的物理柔性。 这种灵活性允许轻松应用于各种尺寸和形状的弯曲VDU显示屏幕。 电致变色器件是从邻近面板的层顺序淀积的六层结构:四分之一波长(QW)氧化铝层; 第一铟锡氧化物(ITO)层; 三氧化钨(WO3)层; 五氧化二钽(Ta2O5)层; 氧化镍(NiO)层; 和第二铟锡氧化物(ITO)层。