公开(公告)号：US20100282307A1

公开(公告)日：2010-11-11

申请号：US12463226

申请日：2009-05-08

申请人： Paul Sharps ,  Fred Newman

发明人： Paul Sharps ,  Fred Newman

IPC分类号： H01L31/00

CPC分类号： H01L31/1844 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1812 ,  Y02E10/544

摘要： A solar cell including a substrate; a first solar subcell composed of GeSiSn disposed over the substrate and having a first band gap; a second solar subcell composed of GaAs, InGaAsP, or InGaP and disposed over the first solar subcell having a second band gap greater than the first band gap and lattice matched to said first solar subcell; and a third solar subcell composed of GaInP and disposed over the second solar subcell having a third band gap greater than the second band gap and lattice matched with respect to the second subcell.

摘要翻译： 一种包括基板的太阳能电池; 第一太阳能子电池，由设置在所述衬底上并具有第一带隙的GeSiSn组成; 由GaAs，InGaAsP或InGaP组成的第二太阳能子电池，并且设置在第一太阳能子电池上，第二太阳能子电池具有大于第一带隙的第二带隙并与所述第一太阳能子电池匹配; 以及第三太阳能子电池，其由GaInP组成并且设置在第二太阳能子电池上方，具有大于第二带隙的第三带隙，并且与第二子电池相匹配。

公开(公告)号：US20080257405A1

公开(公告)日：2008-10-23

申请号：US11788315

申请日：2007-04-18

申请人： Paul Sharps

发明人： Paul Sharps

IPC分类号： H01L31/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0725 ,  Y02E10/50

摘要： A multijunction photovoltaic cell including a top subcell; a second subcell disposed immediately adjacent to the top subcell and producing a first photo-generated current; and including a sequence of first and second different semiconductor layers with different lattice constant; and a lower subcell disposed immediately adjacent to the second subcell and producing a second photo-generated current substantially equal in amount to the first photo-generated current density.

摘要翻译： 一种包括顶部子电池的多结光伏电池; 第二子电池，其紧邻所述顶部子电池并且产生第一光生电流; 并且包括具有不同晶格常数的第一和第二不同半导体层的序列; 以及下部子电池，其紧邻所述第二子电池设置并且产生基本上等于所述第一光生电流密度的第二光生电流。

公开(公告)号：US20050227464A1

公开(公告)日：2005-10-13

申请号：US11143516

申请日：2005-06-02

申请人： Mark Stan ,  Nein Li ,  Frank Spadafora ,  Hong Hou ,  Paul Sharps ,  Navid Fatemi

发明人： Mark Stan ,  Nein Li ,  Frank Spadafora ,  Hong Hou ,  Paul Sharps ,  Navid Fatemi

IPC分类号： H01L21/20 ,  H01L21/22 ,  H01L21/38 ,  H01L31/00 ,  H01L31/078 ,  H01L31/18

CPC分类号： H01L31/078 ,  H01L21/02381 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/2205 ,  H01L31/1852 ,  Y02E10/544

摘要： In a preferred embodiment, an indium gallium phosphide (InGaP) nucleation layer is disposed between the germanium (Ge) substrate and the overlying dual-junction epilayers for controlling the diffusion depth of the n-doping in the germanium junction. Specifically, by acting as a diffusion barrier to arsenic (As) contained in the overlying epilayers and as a source of n-type dopant for forming the germanium junction, the nucleation layer enables the growth time and temperature in the epilayer device process to be minimized without compromising the integrity of the dual-junction epilayer structure. This in turn allows the arsenic diffusion into the germanium substrate to be optimally controlled by varying the thickness of the nucleation layer. An active germanium junction formed in accordance with the present invention has a typical diffused junction depth that is ⅕ to ½ of that achievable in prior art devices. Furthermore, triple junction solar cells incorporating a shallow n-p germanium junction of the present invention can attain 1 sun AM0 efficiencies in excess of 26%.

摘要翻译： 在优选实施例中，铟锗磷（InGaP）成核层设置在锗（Ge）衬底和上覆的双结外延层之间，用于控制锗结中的n掺杂的扩散深度。 具体地说，通过作为包含在上覆外延层中的砷（As）的扩散阻挡层，并且作为用于形成锗结的n型掺杂剂的源，成核层使外延层器件工艺中的生长时间和温度最小化 而不损害双结外延层结构的完整性。 这又允许通过改变成核层的厚度来最佳地控制砷扩散到锗衬底中。 根据本发明形成的活性锗结具有典型的扩散结深度，其为现有技术装置中可实现的1/5至1/2。 此外，结合本发明的浅n-p锗结的三结太阳能电池可以获得超过26％的1次太阳AM0效率。

公开(公告)号：US20100282305A1

公开(公告)日：2010-11-11

申请号：US12463205

申请日：2009-05-08

申请人： Paul Sharps ,  Fred Newman

发明人： Paul Sharps ,  Fred Newman

IPC分类号： H01L31/00 ,  H01L21/20

CPC分类号： H01L31/1812 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of manufacturing a solar cell comprising providing a growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell, including at least one subcell composed of a group IV/III-V hybrid alloy such as GeSiSn; and removing the semiconductor substrate.

摘要翻译： 一种制造太阳能电池的方法，包括提供生长衬底; 在所述生长衬底上沉积形成太阳能电池的半导体材料层序列，包括至少一个由IV / III-V族混合合金如GeSiSn组成的至少一个子电池; 并移除半导体衬底。

公开(公告)号：US20100229926A1

公开(公告)日：2010-09-16

申请号：US12401157

申请日：2009-03-10

申请人： Fred Newman ,  Benjamin Cho ,  Mark A. Stan ,  Paul Sharps

发明人： Fred Newman ,  Benjamin Cho ,  Mark A. Stan ,  Paul Sharps

IPC分类号： H01L31/00 ,  H01L21/02

CPC分类号： H01L31/0735 ,  H01L31/06875 ,  H01L31/0725 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell; the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A lower fourth solar subcell is provided adjacent to the third subcell and lattice matched thereto, the lower fourth subcell having a fifth band gap smaller than the fourth band gap.

摘要翻译： 一种多结太阳能电池，包括具有第一带隙的上部第一太阳能子电池; 与第一太阳能子电池相邻并且具有小于第一带隙的第二带隙的第二太阳能子电池; 邻近第二太阳能子电池的梯度中间层; 所述第一梯度中间层具有大于所述第二带隙的第三带隙; 以及与所述渐变中间层相邻的第三太阳能子电池，所述第三子电池具有小于所述第二带隙的第四带隙，使得所述第三子电池相对于所述第二子电池晶格失配。 第四太阳能子电池被设置为与第三子电池相邻并且与其匹配，下部第四子电池具有小于第四带隙的第五带隙。