公开(公告)号：US4816881A

公开(公告)日：1989-03-28

申请号：US208444

申请日：1988-06-17

申请人： John B. Boos ,  Nicolas A. Papanicolaou ,  Tung H. Weng

发明人： John B. Boos ,  Nicolas A. Papanicolaou ,  Tung H. Weng

IPC分类号： H01L29/45 ,  H01L29/80

CPC分类号： H01L29/452

摘要： A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices.

摘要翻译： 一种低金属电阻欧姆接触，与接触中具有TiW的p InP材料合金化，作为AuZn衬底和Au覆盖层之间的扩散阻挡层。 制造包含各自AuZn，TiW和Au层的栅极接触以及与半导体栅极区域的p InP材料合金化的栅极接触的InP JFET的工艺提供了一种改进的InP JFET，其具有低电阻金属合金欧姆接触 门区域。 在与InP材料合金化的多层接触中使用TiW层导致独特的加工和改进的InP半导体器件。

公开(公告)号：US08652959B2

公开(公告)日：2014-02-18

申请号：US13756566

申请日：2013-02-01

申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

IPC分类号： H01L21/28

CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

公开(公告)号：US5471072A

公开(公告)日：1995-11-28

申请号：US165617

申请日：1993-12-13

申请人： Nicolas A. Papanicolaou

发明人： Nicolas A. Papanicolaou

IPC分类号： H01L21/04 ,  H01L29/47 ,  H01L29/48

CPC分类号： H01L29/6606 ,  H01L21/0495 ,  H01L29/47 ,  Y10S148/148 ,  Y10S438/931 ,  Y10S438/974

摘要： Gold, which is the commonly used metallization on .beta.-silicon carbide, is known to degrade at temperatures above 450.degree. C. It also exhibits poor adhesion to silicon carbide. Schottky contacts with platinum metallization have rectifying characteristics similar to contacts with gold metallization. The platinum Schottky contacts remain stable up to 800.degree. C. Adhesion of the platinum deposited at slightly elevated temperatures is also superior to that for gold. Platinum provides a metallization that is physically more rugged and thermally more stable than conventional gold metallization.

摘要翻译： 已知在β-碳化硅上常用的金属化的金属在450℃以上的温度下降解，同时对碳化硅的附着力也差。 与铂金属化的肖特基接触具有与金金属化接触相似的整流特性。 白金肖特基接触保持稳定至800℃。在稍微升高的温度下沉积的铂的附着力也优于金。 铂金提供金属化，其物理上比常规金金属化更坚固，热稳定。

公开(公告)号：US5270252A

公开(公告)日：1993-12-14

申请号：US920738

申请日：1992-07-28

申请人： Nicolas A. Papanicolaou

发明人： Nicolas A. Papanicolaou

IPC分类号： H01L21/04 ,  H01L29/47 ,  H01L21/283

CPC分类号： H01L29/6606 ,  H01L21/0495 ,  H01L29/47 ,  Y10S148/148 ,  Y10S438/931 ,  Y10S438/974

摘要： Platinum Schottky contacts remaining stable up to 800.degree. C. have been produced. The adhesion of the platinum deposited at slightly elevated temperatures is good. Platinum provides a metallization that is physically rugged and thermally stable. The Schottky contacts are made on B-Silicon carbide.

摘要翻译： 白金肖特基接触点稳定在800°C以下。 在稍微升高的温度下沉积的铂的粘附性良好。 铂金提供物理坚固耐热稳定的金属化。 肖特基触点是用B碳化硅制成的。

公开(公告)号：US4640003A

公开(公告)日：1987-02-03

申请号：US781560

申请日：1985-09-30

申请人： Nicolas A. Papanicolaou

发明人： Nicolas A. Papanicolaou

IPC分类号： H01L21/285 ,  H01L21/306 ,  H01L21/329 ,  H01L29/872 ,  H01L29/56 ,  H01L21/283

CPC分类号： H01L29/66212 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L21/30617 ,  H01L29/872 ,  Y10S148/084 ,  Y10S148/14 ,  Y10S438/978

摘要： A Schottky diode and method of making same in which a n+ doped layer, an noped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecutively on a semi-insulating substrate made of the same material. A mesa with acute angled sides is etched on the undoped layer to such a depth that the n doped layer is exposed. A Schottky and ohmic contact are then deposited on opposite sides of the mesa. The exposed n layer is then bombarded with protons at normal incidence.

摘要翻译： 一种肖特基二极管及其制造方法，其中在半导体上连续生长选自由砷化镓，砷化镓铝和磷化铟组成的组中的n +掺杂层，n掺杂层和半绝缘材料的未掺杂层， - 由相同材料制成的绝缘衬底。 在非掺杂层上刻蚀具有锐角侧面的台面，以使n掺杂层露出的深度。 然后将肖特基和欧姆接触沉积在台面的相对侧上。 然后暴露的n层在正常入射时用质子轰击。