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    n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits
    1.
    发明申请
    n- and p-Channel Field Effect Transistors with Single Quantum Well for Complementary Circuits 有权
    具有单量子阱的n沟道场效应晶体管和p沟道场效应晶体管用于互补电路

    公开(公告)号：US20130149845A1

    公开(公告)日：2013-06-13

    申请号：US13756566

    申请日：2013-02-01

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits
    2.
    发明申请
    N-and P-Channel Field-Effect Transistors with Single Quantum Well for Complementary Circuits 有权
    具有单量子阱的N沟道场效应晶体管和P沟道场效应晶体管用于互补电路

    公开(公告)号：US20110297916A1

    公开(公告)日：2011-12-08

    申请号：US13115453

    申请日：2011-05-25

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L27/092 ,  H01L21/8238

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    n- and p-channel field effect transistors with single quantum well for complementary circuits
    3.
    发明授权
    n- and p-channel field effect transistors with single quantum well for complementary circuits 有权
    具有用于互补电路的单量子阱的n沟道场效应晶体管和p沟道场效应晶体管

    公开(公告)号：US08652959B2

    公开(公告)日：2014-02-18

    申请号：US13756566

    申请日：2013-02-01

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A. Papanicolaou

    IPC分类号： H01L21/28

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    N- and p-channel field-effect transistors with single quantum well for complementary circuits
    4.
    发明授权
    N- and p-channel field-effect transistors with single quantum well for complementary circuits 有权
    具有用于互补电路的单量子阱的N沟道场效应晶体管和p沟道场效应晶体管

    公开(公告)号：US08461664B2

    公开(公告)日：2013-06-11

    申请号：US13115453

    申请日：2011-05-25

    申请人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

    发明人： Brian R. Bennett ,  John Bradley Boos ,  Mario Ancona ,  James G. Champlain ,  Nicolas A Papanicolaou

    IPC分类号： H01L29/20

    CPC分类号： H01L21/02398 ,  H01L21/02395 ,  H01L21/02466 ,  H01L21/02505 ,  H01L21/02549 ,  H01L27/0605

    摘要： A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

    摘要翻译： 在同一器件中单个In x Ga 1-x Sb量子阱用作n沟道和p沟道的互补金属氧化物半导体（CMOS）器件及其制造方法。 In x Ga 1-x Sb层是异质结构的一部分，其在结构的一部分上包括在In x Ga 1-x Sb层上方的Te-δ掺杂的Al y Ga 1-y Sb。 可以通过使用适当的源极，栅极和漏极端子将不具有Te-δ掺杂的AlI y Ga 1-y Sb阻挡层的部分结构制成p-FET，并且保留Te-δ掺杂的Al y Ga 1 -ySb层可以制造成n-FET，使得该结构形成CMOS器件，其中单个In x Ga 1-x Sb量子阱用作异质结构的n-FET部分和p-FET部分的传输沟道。

    Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices
    9.
    发明申请
    Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices 审中-公开
    低功耗电子器件的低电阻率p型GaSb量子阱

    公开(公告)号：US20140339501A1

    公开(公告)日：2014-11-20

    申请号：US13895388

    申请日：2013-05-16

    申请人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    发明人： Brian R. Bennett ,  Theresa F. Chick ,  Mario G. Ancona ,  John Bradley Boos

    IPC分类号： H01L29/12

    CPC分类号： H01L29/122 ,  H01L29/201 ,  H01L29/7783

    摘要： A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1−wAs on a semi-insulating (100) InP substrate, where the InwAl1−wAs is lattice matched to InP, followed by an AlAsxSb1−x buffer layer on the InwAl1−wAs layer, an AlAsxSb1−x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1−x barrier layer on the quantum well layer, an InyAl1−ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

    摘要翻译： 提供包括具有至少一个低电阻率p型GaSb量子阱的异质结构的半导体器件。 异质结构包括在半绝缘（100）InP衬底上的InwAl1-wAs层，其中InwAl1-wAs与InP晶格匹配，随后是InwAl1-wAs层上的AlAsxSb1-x缓冲层，AlAsxSb1-x 缓冲层上的间隔层，间隔层上的GaSb量子阱层，量子阱层上的AlAs x Sb 1-x势垒层，势垒层上的In y Al 1-y Sb层和InAs帽。 半导体器件适用于诸如场效应晶体管的低功率电子器件。

    Modified InAs hall elements
    10.
    发明授权
    Modified InAs hall elements 失效
    修改的InAs大厅元素

    公开(公告)号：US06316124B1

    公开(公告)日：2001-11-13

    申请号：US09482053

    申请日：2000-01-13

    申请人： John Bradley Boos ,  Walter Kruppa ,  Brian R. Bennett ,  Ming-Jey Yang

    发明人： John Bradley Boos ,  Walter Kruppa ,  Brian R. Bennett ,  Ming-Jey Yang

    IPC分类号： B32B1500

    CPC分类号： B32B15/01 ,  Y10T428/12528 ,  Y10T428/12681 ,  Y10T428/12736 ,  Y10T428/2495

    摘要： This invention pertains to more sensitive and more stable electronic devices which can sense electrical and magnetic fields. The devices are characterized by InAs channels confined on both sides thereof by a wide band gap AlSb material; protective layers above the AlSb material; modulation doping above the AlSb material; and layers of the InAs channel material containing 1 to 99 mol percent antimony, with the channel material being deposited in the form of alternating monolayers of InSb and InAs, of a ternary mixture of InAsSb.

    摘要翻译： 本发明涉及可感测电场和磁场的更敏感和更稳定的电子装置。 这些器件的特征在于通过宽带隙AlSb材料限制在其两侧的InAs通道; AlSb材料上方的保护层; AlSb材料上的调制掺杂; 和含有1至99mol％锑的InAs通道材料的层，其中通道材料以InAsb的三元混合物的InSb和InAs的交替单层形式沉积。