公开(公告)号：US10409146B2

公开(公告)日：2019-09-10

申请号：US16306966

申请日：2017-06-08

Applicant: QD Laser, Inc.

Inventor： Mitsuru Sugawara ,  Makoto Suzuki ,  Kinya Hasegawa

IPC: G03B21/20 ,  G02B27/02 ,  G09G5/38 ,  G16H50/00 ,  A61B3/024 ,  A61B3/032 ,  H04N9/31 ,  G02B27/01 ,  G02B26/12 ,  G09G3/02

Abstract: A terminal device (300) includes a projection target holding unit that holds projection information to be projected by an image projection device (200), a storage unit that stores position information indicating a position on the retina of a user (P) at which the projection information is to be projected, a position information acquisition unit that acquires the position information from the storage unit, an image data generation unit that generates image data (D) of an image (202G) that projects the projection information at the position indicated by the position information, and an image output processing unit that outputs the image data (D) to the image projection device (200). The image projection device (200) includes a light source unit that emits a light beam, an image input unit that inputs the image data (D) from the terminal device (300), a control unit that generates an image light beam based on the input image data (D) and controls emission of the image light beam from the light source unit, a scanning mirror that scans the image light beam, and a projection unit that projects the image light beam on the retina of the eyeball of the user (P) as the image (202G) represented by the image data (D).

公开(公告)号：US09865771B2

公开(公告)日：2018-01-09

申请号：US15110991

申请日：2015-01-07

Applicant: QD LASER, INC. ,  UNIVERSITY OF SHEFFIELD

Inventor： Kenichi Nishi ,  Takeo Kageyama ,  Keizo Takemasa ,  Mitsuru Sugawara ,  Richard Hogg ,  Siming Chen

IPC: H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

Abstract: A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.