公开(公告)号：US20170365570A1

公开(公告)日：2017-12-21

申请号：US15184841

申请日：2016-06-16

Applicant: QUALCOMM Incorporated

Inventor： Daeik Kim ,  Chengjie Zuo ,  Mario Velez ,  Changhan Yun ,  Jonghae Kim

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/48 ,  H01L21/683

CPC classification number: H01L21/6836 ,  H01L21/4846 ,  H01L21/78 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/05647 ,  H01L2224/32265 ,  H01L2224/94 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19102 ,  H01L2224/83 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00014

Abstract: Some implementations provide a device that includes a passive component and a substrate coupled to the passive component, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate. Some implementations provide an integrated device that includes a device layer and a substrate coupled to the device layer, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate.

公开(公告)号：US20170279469A1

公开(公告)日：2017-09-28

申请号：US15080472

申请日：2016-03-24

Applicant: QUALCOMM Incorporated

Inventor： Yunfei Ma ,  Chengjie Zuo ,  David Berdy ,  Daeik Kim ,  Changhan Yun ,  Je-Hsiung Lan ,  Mario Velez ,  Niranjan Sunil Mudakatte ,  Robert Mikulka ,  Jonghae Kim

IPC: H04B1/00 ,  H04B1/40 ,  H04L5/14 ,  H04B1/04 ,  H04B1/3827

CPC classification number: H04B1/0057 ,  H03H7/09 ,  H03H7/463 ,  H04B1/04 ,  H04B1/3827 ,  H04B1/40 ,  H04B2001/0416 ,  H04L5/14

Abstract: An RF diplexer is provided with an integrated diplexer that shares a primary inductor included in a channel within the RF diplexer.