公开(公告)号：US20210242127A1

公开(公告)日：2021-08-05

申请号：US16779192

申请日：2020-01-31

Applicant: QUALCOMM Incorporated

Inventor： Sinan GOKTEPELI ,  Farid AZZAZY ,  Ravi Pramod Kumar VEDULA

IPC: H01L23/522 ,  H01L49/02

Abstract: An integrated circuit (IC) is described. The IC includes a substrate and a plurality of back-end-of-line (BEOL) layers on the substrate. The IC also includes a trench having tapered sidewalls and a base in a BEOL layer of the plurality of BEOL layers on the substrate. The IC further includes a metal-insulator-metal (MIM) capacitor on the tapered sidewalls and the base of the trench in the BEOL layer. The MIM capacitor includes a first conductive layer to line the tapered sidewalls and the base of the trench. The MIM capacitor also includes a dielectric layer to line the first conductive layer on the tapered sidewalls and the base of the trench. The MIM capacitor further includes a second conductive layer on the dielectric layer and filling the trench in the BEOL layer.

公开(公告)号：US20190109152A1

公开(公告)日：2019-04-11

申请号：US16000501

申请日：2018-06-05

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Sinan GOKTEPELI ,  Jarred MOORE

IPC: H01L27/12 ,  H01L29/06 ,  H01L23/66

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET), including a source region, a drain region, a body region, and a gate. The RFIC also includes a body bypass resistor coupled between the gate and the body region. The RFIC further includes a gate isolation resistor coupled between the gate and the body region. The RFIC also includes a diode coupled between the body bypass resistor and the gate isolation resistor.

公开(公告)号：US20250072059A1

公开(公告)日：2025-02-27

申请号：US18455500

申请日：2023-08-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Abhijeet PAUL ,  Hyunchul JUNG

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A radio frequency (RF) device is described. The RF device includes a semiconductor-on-insulator (SOI) substrate having a first-type diffusion region. The RF device also includes a transistor including a source region and a drain region in the first-type diffusion region, a gate region between the source region and the drain region, and a body region. The RF device further includes a second-type diffusion region, comprising a gate overlap region partially overlapped by the gate region to define the body region and a second-type diffusion encroachment region in the source region and adjoining the gate overlap region to form a body terminal region, in which a silicidation layer shorts the body terminal region to the source region.

公开(公告)号：US20240063790A1

公开(公告)日：2024-02-22

申请号：US18104409

申请日：2023-02-01

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Abhijeet PAUL ,  Hyunchul JUNG

IPC: H03K17/687

CPC classification number: H03K17/6872 ,  H03K17/6874 ,  H03K2217/0036

Abstract: A radio frequency (RF) device is described. The RF device includes a switch field effect transistor (FET), having a source region, a drain region, a body region, and a gate region. The RF device also includes a dynamic bias control circuit. The dynamic bias control circuit includes a first transistor coupled to the gate region of the switch FET by a gate resistor. The dynamic bias control circuit also includes a second transistor coupled to the first transistor and coupled to the body region of the switch FET by a body resistor. The dynamic bias control circuit further includes a capacitor coupled to the body region of the switch FET by the body resistor, and the gate region of the switch FET, by the gate resistor.

公开(公告)号：US20240063787A1

公开(公告)日：2024-02-22

申请号：US17892800

申请日：2022-08-22

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Abhijeet PAUL ,  Hyunchul JUNG

IPC: H03K17/687

CPC classification number: H03K17/687 ,  H01L27/1203

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET). The switch FET includes a source region, a drain region, a body region, and a gate region. The RFIC also includes a dynamic bias control circuit. The dynamic bias control circuit includes at least one transistor coupled between the body region and the gate region of the switch FET.

公开(公告)号：US20190393340A1

公开(公告)日：2019-12-26

申请号：US16156729

申请日：2018-10-10

Applicant: QUALCOMM Incorporated

Inventor： Qingqing LIANG ,  Ravi Pramod Kumar VEDULA ,  Sivakumar KUMARASAMY ,  George Pete IMTHURN ,  Sinan GOKTEPELI

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66 ,  H01L29/08 ,  H01L29/49 ,  H01L21/28

Abstract: An integrated circuit is described. The integrated circuit includes a metal oxide semiconductor field effect transistor (MOSFET). The MOSFET is on a first surface of an insulator layer of the integrated circuit. The MOSFET including a source region, a drain region, and a front gate. The MOSFET also includes an extended drain region between the drain region and a well proximate the front gate. The integrated circuit also includes back gates on a second surface opposite the first surface of the insulator layer. The back gates are overlapped by the extended drain region.

公开(公告)号：US20190189801A1

公开(公告)日：2019-06-20

申请号：US15988987

申请日：2018-05-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA

IPC: H01L29/78 ,  H01L29/423 ,  H01L27/12 ,  H01L29/06 ,  H01L21/84 ,  H01L29/66 ,  H01L21/683 ,  H01L23/66 ,  H01L23/528 ,  H01L23/522

Abstract: A radio frequency (RF) integrated circuit (RFIC) switch multi-finger transistor includes a first dual gate transistor having a first gate with a first gate length on a first side of a substrate, and a second gate with a second gate length on a second side of the substrate. The RFIC also includes a second dual gate transistor having a third gate with a third gate length on the first side of the substrate, and a fourth gate with a fourth gate length on the second side of the substrate. The second gate length is different than the fourth gate length, and the second dual gate transistor is coupled in series with the first dual gate transistor in the RFIC switch multi-finger transistor.