公开(公告)号：US09130529B2

公开(公告)日：2015-09-08

申请号：US14157553

申请日：2014-01-17

Applicant: QUALCOMM Incorporated

Inventor： Ehab Ahmed Sobhy Abdel Ghany ,  Sang Hyun Woo ,  Wingching Vincent Leung ,  Zhang Jin ,  Li-Chung Chang

IPC: H04B1/18 ,  H04B1/10 ,  H03G3/30 ,  H03F3/19 ,  H03F1/26 ,  H03F3/193 ,  H03F3/68

CPC classification number: H03G3/3036 ,  H03F1/26 ,  H03F3/19 ,  H03F3/193 ,  H03F3/68 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/451

Abstract: A device includes a first and a second low noise amplifier (LNA), a first degenerative inductance coupled between the first LNA and ground by a first ground connection, and a second degenerative inductance coupled between the second LNA and ground by a second ground connection, the first and second degenerative inductances configured to establish negative inductive coupling between the first and second degenerative inductances.

Abstract translation: 器件包括第一和第二低噪声放大器（LNA），通过第一接地连接耦合在第一LNA和地之间的第一退化电感，以及通过第二接地连接耦合在第二LNA与地之间的第二退化电感， 第一和第二退化电感被配置为在第一和第二退化电感之间建立负电感耦合。