公开(公告)号：US20160080534A1

公开(公告)日：2016-03-17

申请号：US14947748

申请日：2015-11-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takayuki SHINOHARA ,  Masatoshi KIMURA

IPC: H04M1/02 ,  H04M1/725

CPC classification number: G06F9/4403 ,  G06F3/061 ,  G06F3/0655 ,  G06F3/0679 ,  G06F7/725 ,  G06F13/385 ,  G06F13/4068 ,  G06F17/30091 ,  G06F2207/7228 ,  G06F2213/3806 ,  H04L9/003 ,  H04L9/3066 ,  H04L2209/08 ,  H04L2209/56 ,  H04M1/026 ,  H04M1/6505 ,  H04M1/72522 ,  H04M2201/36 ,  H04M2250/14

Abstract: A memory system is constituted of a file storage flash memory storing a control program required for a control portion and a large amount of data, and a random access memory storing a program used by the control portion and functioning as a buffer memory for received data. Thus, a memory system for a portable telephone capable of storing a large amount of received data at high-speed and allowing reading of the stored data at high-speed is provided.

公开(公告)号：US20160064447A1

公开(公告)日：2016-03-03

申请号：US14833605

申请日：2015-08-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Masatoshi KIMURA

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14685 ,  H01L27/14689

Abstract: The invention improves performance of a solid-state image sensor in which each of the pixels arranged in a pixel array part includes a microlens and plural photodiodes. The locations of the opposing sides between the photodiodes arranged side by side in each pixel are self-alignedly defined by a gate pattern. The location over wiring where the microlens is to be formed is checked and determined using as a superposition mark a check pattern of the same layer as a gate layer.

Abstract translation: 本发明改进了其中布置在像素阵列部分中的每个像素包括微透镜和多个光电二极管的固态图像传感器的性能。 在每个像素中并排布置的光电二极管之间的相对侧的位置由栅极图案自对准地限定。 使用与栅极层相同的层的检查图案作为叠加标记来检查和确定要形成微透镜的布线上的位置。

公开(公告)号：US20150357365A1

公开(公告)日：2015-12-10

申请号：US14716125

申请日：2015-05-19

Applicant: Renesas Electronics Corporation

Inventor： Masatoshi KIMURA

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14689

Abstract: A semiconductor device is reduced in power consumption, the semiconductor device including a solid-state imaging device that includes pixels each having a plurality of light receiving elements. A pixel having first and second photodiodes is provided with a first transfer transistor that transfers charge in the first photodiode to a floating diffusion capacitance section, and a second transfer transistor that combines charge in the first photodiode and charge in the second photodiode, and transfers the combined charge to the floating diffusion capacitance section. Consequently, the semiconductor device is reduced in power required for activation of each transfer transistor in operation such as imaging with the solid-state imaging device.

Abstract translation: 半导体器件的功耗降低，该半导体器件包括固态成像器件，其包括各自具有多个光接收元件的像素。 具有第一和第二光电二极管的像素设置有将第一光电二极管中的电荷传送到浮动扩散电容部分的第一传输晶体管，以及组合第一光电二极管中的电荷并在第二光电二极管中充电的第二传输晶体管， 组合电荷到浮动扩散电容部分。 因此，半导体器件在诸如利用固态成像器件的成像的操作中激活每个传输晶体管所需的功率降低。