公开(公告)号：US20130320560A1

公开(公告)日：2013-12-05

申请号：US13903323

申请日：2013-05-28

Applicant: Rambus Inc.

Inventor： David Secker ,  Ling Yang ,  Chanh Tran ,  Ying Ji

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/5286 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06541 ,  H01L2924/00014 ,  H03K5/1252 ,  H01L2224/0401

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.