公开(公告)号：US5335243A

公开(公告)日：1994-08-02

申请号：US971383

申请日：1992-11-04

申请人： Randy L. Kubena ,  Frederic P. Stratton ,  Gary M. Atkinson ,  Hugh McNulty, Jr. ,  James W. Ward

发明人： Randy L. Kubena ,  Frederic P. Stratton ,  Gary M. Atkinson ,  Hugh McNulty, Jr. ,  James W. Ward

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/42 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/18 ,  H01S3/08

CPC分类号： G02B6/122 ,  G02B6/42 ,  H01S5/18 ,  G02B2006/12104 ,  G02B2006/12176 ,  G02B6/4214 ,  H01S5/02248

摘要： A 3-dimensional opto-electronic system employs an optical communications channel between spaced circuit substrates. The beam from an in-line laser on one substrate is deflected by a turning mirror that is monolithically integrated on the substrate along with the laser and its associated electronic circuitry, and directed to an optical detector on another substrate. The deflection is accomplished with a turning mirror that is specially fabricated with a focused ion beam (FIB) so that it focuses or collimates as well as deflects the laser beam onto the photodetector. The mirror is initially formed with a flat surface, and is thereafter processed with the FIB to produce focusing curvatures in both x and y directions. The mirror is preferably spaced away from the laser, and is illuminated over substantially the full laser height to maximize its focal length for a given reflected spot size. For a rectangular laser beam, the mirror curvature can be different along the mirror width than along its height to produce a smaller, more rounded spot. The mirror curvature is preferably established by raster scanning the mirror area in multiple series of FIB scans, with each series encompassing a different proportion of the mirror surface, and repeating each series a number of times that generally increases with its area. The area-dependent repetition pattern is preferably followed for two sets of scans, one with the scanning area's x dimension progressively reduced and the other with its y dimension progressively reduced.

摘要翻译： 三维光电系统在间隔的电路基板之间采用光通信通道。 在一个衬底上的来自在线激光器的光束通过与激光器及其相关联的电子电路一体地集成在衬底上的转向镜偏转，并被引导到另一个衬底上的光学检测器。 偏转通过专门用聚焦离子束（FIB）制造的转向镜完成，使得其聚焦或准直以及将激光束偏转到光电检测器上。 镜子最初形成有平坦表面，然后用FIB处理以在x和y方向上产生聚焦曲率。 反射镜优选地与激光器间隔开，并且在基本上全激光高度上照射，以使给定反射光斑尺寸的焦距最大化。 对于矩形激光束，反射镜的曲率可以沿着反射镜的宽度而不同于其高度，以产生更小，更圆的光斑。 反射镜曲率优选通过在多个FIB扫描系列中对镜面区域进行光栅扫描来建立，其中每个系列包含镜面的不同比例，并且重复每个系列通常随其面积而增加的次数。 对于两组扫描，优选地遵循面积依赖的重复图案，一组扫描区域的x维度逐渐减小，另一个扫描区域的y维度逐渐减小。

公开(公告)号：US5155053A

公开(公告)日：1992-10-13

申请号：US705870

申请日：1991-05-28

申请人： Gary M. Atkinson

发明人： Gary M. Atkinson

IPC分类号： H01L21/28 ,  H01L21/027 ,  H01L21/285 ,  H01L21/335 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L29/66462 ,  H01L21/0272 ,  H01L21/28587 ,  Y10S438/909 ,  Y10S438/949 ,  Y10S438/951

摘要： A T-gate structure (28a) is fabricated on a microelectronic device substrate (10) using a trilevel resist system in combination with a two-step reactive ion etching (RIE) technique utilizing an oxygen plasma. The trilevel resist consists of a planarizing resist layer (12), masking layer (14) and imaging resist layer (16), which are formed on the surface (10a) of the substrate (10). A focused ion beam (18) is then used to expose the uppermost imaging layer (16) with an image having a width equal to the desired gate length of the T-gate structure (28a). The imaged area is developed and etched to form an opening (14a,16a) of the same width through the imaging layer (16) and also through the masking layer (14). In the first oxygen RIE step, the planarizing resist layer (12) is etched isotropically through the opening (14a,16a), partially down to the substrate surface (10a) to form a cavity (12a) having a width which is larger than the width of the opening (14a,16a). The second oxygen RIE step is used to etch the planarizing resist layer (12) through the opening (14a,16a) completely down to the substrate surface (10a) to form a notch (12a) underneath the cavity (12a) having a width substantially equal to the width of the opening (14a,16a) and thereby the gate length of the T-gate structure (28a). The imaging layer (16) and masking layer (14) are removed, and metal (28) is evaporated onto the substrate (10) to fill the cavity (12a) and notch (12b) and thereby form the T-gate structure (28a). The first resist layer (12) and overlying metal (28) are lifted off, leaving the T-gate structure (28a) on the surface (10a) of the substrate (10).