公开(公告)号：US20170162683A1

公开(公告)日：2017-06-08

申请号：US15437559

申请日：2017-02-21

Applicant: Renesas Electronics Corporation

Inventor： Tatsuo NAKAYAMA ,  Hironobu MIYAMOTO ,  Yasuhiro OKAMOTO ,  Yoshinao MIURA ,  Takashi INOUE

IPC: H01L29/778 ,  H01L29/15 ,  H01L29/423 ,  H01L29/40 ,  H01L23/535 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/027 ,  H01L29/205 ,  H01L29/06

CPC classification number: H01L29/7787 ,  H01L21/0274 ,  H01L21/3065 ,  H01L23/535 ,  H01L29/0649 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

Abstract: A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer, a third nitride semiconductor layer formed over the second nitride semiconductor layer, a fourth nitride semiconductor layer formed over the third nitride semiconductor layer, a trench that penetrates the fourth nitride semiconductor layer and reaches as far as the third nitride semiconductor layer, a gate electrode disposed by way of a gate insulation film in the trench, a first electrode and a second electrode formed respectively over the fourth nitride semiconductor layer on both sides of the gate electrode, and a coupling portion for coupling the first electrode and the first nitride semiconductor layer.

公开(公告)号：US20160240648A1

公开(公告)日：2016-08-18

申请号：US15142601

申请日：2016-04-29

Applicant: Renesas Electronics Corporation

Inventor： Yasuhiro OKAMOTO ,  Tatsuo NAKAYAMA ,  Takashi INOUE

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L21/28 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/7787 ,  H01L21/28264 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/42368 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7789

Abstract: A semiconductor device includes a first nitride semiconductor layer formed above a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap larger than that of the first nitride semiconductor layer, a trench passing through the second nitride semiconductor layer and into the first nitride semiconductor layer, a gate insulation film formed in the trench, and a gate electrode disposed by way of the gate insulation film in an inside of the trench. The corner of the trench between a side wall of the trench and a bottom of the trench includes a rounded shape, and a corner of the gate insulation film in contact with the corner of the trench includes a rounded shape.

Abstract translation: 半导体器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上并且具有比第一氮化物半导体层的带隙大的带隙的第二氮化物半导体层，穿过第二氮化物半导体层 并且形成在沟槽中的第一氮化物半导体层，栅极绝缘膜以及沟槽内部通过栅极绝缘膜设置的栅电极。 沟槽的侧壁和沟槽的底部之间的沟槽的角部包括圆形形状，并且与沟槽的角部接触的栅极绝缘膜的角部包括圆形。