公开(公告)号：US10270244B2

公开(公告)日：2019-04-23

申请号：US15059251

申请日：2016-03-02

Applicant: RICHWAVE TECHNOLOGY CORP.

Inventor： Chuan-Chen Chao

IPC: H02H9/04 ,  H01L29/861 ,  H01L49/02 ,  H01L27/02 ,  H01L29/06 ,  H01L27/06 ,  H01L29/737

Abstract: An ESD protection circuit includes an input port, a resistor, a BJT, and a diode. The BJT has an emitter, a base, and a collector. The emitter of the BJT is coupled to the input port. The base of the BJT is coupled through the resistor to the input port. The diode has a first terminal and a second terminal. The first terminal of the diode is the collector of the BJT. The second terminal of the diode is coupled to a supply voltage.

公开(公告)号：US11705725B2

公开(公告)日：2023-07-18

申请号：US17083323

申请日：2020-10-29

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Ching-Yao Pai

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0288

Abstract: An integrated circuit includes a signal pad, receiving an input signal during a normal mode, and receive an ESD signal during an ESD mode; an internal circuit, processing the input signal during the normal mode; a variable impedance circuit, comprising a first end coupled to the signal pad, a second end coupled to the internal circuit, wherein the variable impedance circuit provides a low or high impedance path between the signal pad and the internal circuit during the normal or ESD mode; and a switch circuit, comprising a first end coupled to a control end of the variable impedance circuit, a second end coupled to a reference voltage terminal, and a control end receiving a node voltage, wherein the switch circuit switches the control end of the variable impedance circuit to have a first specific voltage or be electrically floating during the normal or ESD mode.

公开(公告)号：US11476816B2

公开(公告)日：2022-10-18

申请号：US17128212

申请日：2020-12-21

Applicant: RichWave Technology Corp.

Inventor： Yu-Chun Donald Lie ,  Chuan-Chen Chao

IPC: H03F3/45 ,  H03F3/195 ,  H04B1/04

Abstract: An amplifier device and a duplexer circuit are provided. The amplifier device includes a first differential amplifier circuit and a controller. The first differential amplifier circuit includes first and second radio frequency (RF) input terminals, first and second transistors, first and second adjustable capacitor circuits, and first and second RF output terminals. The controller adjusts capacitance values of the first adjustable capacitor circuit of the first differential amplifier circuit and the second adjustable capacitor circuit of the first differential amplifier circuit according to at least one of a characteristic related to a first RF input signal of the first differential amplifier circuit, a characteristic related to the second RF input signal of the first differential amplifier circuit, a matching deviation between the first transistor and the second transistor of the first differential amplifier circuit, and a characteristic of the amplifier device.

公开(公告)号：US11050245B2

公开(公告)日：2021-06-29

申请号：US16168845

申请日：2018-10-24

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao

IPC: H02H9/04 ,  H03K17/693 ,  H02H9/02 ,  G05F3/18 ,  H04B3/46

Abstract: A switch apparatus is provided. The switch apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipation circuit. The signal control switch and the switch circuit are respectively controlled by a first control signal and a second control signal to be turned on or off. The blocking capacitor is serially coupled between the switch circuit and a reference voltage end. The surge current dissipation circuit includes a Zener diode circuit or at least one diode circuit, and the at least one diode circuit has one or more diodes coupled in series. The one or more diodes coupled in series are coupled between two ends of the surge current dissipation circuit according to a first polarity direction.

公开(公告)号：US20200168705A1

公开(公告)日：2020-05-28

申请号：US16551713

申请日：2019-08-26

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Po-Hsiang Yang

IPC: H01L29/08 ,  H01L29/737

Abstract: A bipolar transistor includes a collector layer, a base layer on the collector layer, and a first elongated emitter mesa on the base layer having a long side and a short side, wherein the long side is parallel with a first direction, and n separate first emitter-contact structures disposed along the first direction on the first elongated emitter mesa, where n is an integer greater than one.

公开(公告)号：US20190221530A1

公开(公告)日：2019-07-18

申请号：US15956760

申请日：2018-04-19

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  E-Jen Lien

IPC: H01L23/66 ,  H05K1/02

CPC classification number: H01L23/66 ,  H05K1/0239

Abstract: An integrated circuit and a transmission circuit thereof are provided. The transmission circuit includes an input buffer and a voltage holding circuit. The voltage holding circuit has a first end coupled to the input end of the input buffer, and a second end coupled to a reference voltage end. The voltage holding circuit includes a switch and a diode apparatus coupled in series between the first end and the second end of the voltage holding circuit. The switch is configured to receive a mode signal, and is turned on or cut off according to the mode signal.