摘要:
A programmable logic device is presented comprising a global interconnect array whose lines are fed via programmable multiplexers to logic array blocks. The global interconnect array lines are fed to the multiplexers in a specific pattern which maximizes the user's ability to route a selected line to the output of a selected multiplexer, while at the same time maintaining higher speed and lower power consumption, and using less chip array than prior art programmable logic devices using programmable interconnect arrays based on erasable programmable read-only memories.
摘要:
A variable-path-length voltage-controlled oscillator circuit is provided. The oscillator circuit has a ring oscillator formed from a series of voltage-controlled inverter stages. The path length (i.e., the number of inverter stages) in the ring is selected based on path length configuration data stored in memory. The selected path length determines the nominal or center frequency of operation of the ring oscillator. The output frequency of the oscillator circuit is voltage-tuned about this center frequency by varying the delay of each inverter stage in the ring oscillator path. Various types of voltage-controlled inverter stages may be used, including current-starved inverter stages, variable-capacitive-load inverter stages, and differential-delay inverter stages. The voltage-controlled oscillator circuit may be used in a phase-locked loop on a programmable logic device for frequency synthesis or to eliminate clock skew.
摘要:
Circuitry is provided to individually configure each I/O of an integrated circuit to be compatible with a different LVTTL I/O standards. This can be done with only one I/O supply voltage, where that voltage is the highest of the I/O voltages needed in a particular application. The circuitry operates by regulating the output voltage of the I/O cell so that it is above the VOH and below the maximum VIH for the LVTTL standard for which it will comply with. Since each I/O cell is individually configurable, any I/O can drive out to any LVTTL specification.
摘要:
Circuitry is provided to individually configure each I/O of an integrated circuit to be compatible with a different LVTTL I/O standards. This can be done with only one I/O supply voltage, where that voltage is the highest of the I/O voltages needed in a particular application. The circuitry operates by regulating the output voltage of the I/O cell so that it is above the VOH and below the maximum VIH for the LVTTL standard for which it will comply with. Since each I/O cell is individually configurable, any I/O can drive out to any LVTTL specification.
摘要:
Circuitry is provided to individually configure each I/O of an integrated circuit to be compatible with a different LVTTL I/O standards. This can be done with only one I/O supply voltage, where that voltage is the highest of the I/O voltages needed in a particular application. The circuitry operates by regulating the output voltage of the I/O cell so that it is above the VOH and below the maximum VIH for the LVTTL standard for which it will comply with. Since each I/O cell is individually configurable, any I/O can drive out to any LVTTL specification.
摘要:
Circuitry is provided to individually configure each I/O of an integrated circuit to be compatible with a different LVTTL I/O standards. This can be done with only one I/O supply voltage, where that voltage is the highest of the I/O voltages needed in a particular application. The circuitry operates by regulating the output voltage of the I/O cell so that it is above the VOH and below the maximum VIH for the LVTTL standard for which it will comply with. Since each I/O cell is individually configurable, any I/O can drive out to any LVTTL specification.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE−Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
Redundant circuitry for a logic circuit such as a programmable logic device is provided. The redundant circuitry allows the logic circuit to be repaired by replacing a defective logic area on the circuit with a redundant logic circuit. Rows and columns of logic areas may be logically remapped by row and column swapping. The logic circuit contains dynamic control circuitry for directing programming data to various logic areas on the circuit in an order defined by redundancy configuration data. Redundancy may be implemented using either fully or partially redundant logic areas. Logic areas may be swapped to remap a partially redundant logic area onto a logic area containing a defect. The defect may then be repaired using row or column swapping or shifting. A logic circuit containing folded rows of logic areas may be repaired by replacing a defective half-row with a redundant half-row.
摘要:
A programmable logic array device in which programmable logic regions are arranged in groups of four is provided. The device includes direct connect conductors for carrying signals totally within one group of four regions as well as to certain adjacent programmable logic regions, local conductors for carrying signals within groups and among adjacent groups, and global conductors for carrying device-wide signals. Connections among the various conductors, and between conductors and programmable logic regions, are provided to optimize the connection resources by avoiding switched conductor paths wherever possible.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.