公开(公告)号：US20050087761A1

公开(公告)日：2005-04-28

申请号：US10692606

申请日：2003-10-24

申请人： Robert Steinhoff

发明人： Robert Steinhoff

IPC分类号： H01L23/62 ,  H01L27/02 ,  H01L29/00 ,  H01L29/74

CPC分类号： H01L27/0262

摘要： The present invention provides a system for electrostatic discharge protection in a semiconductor device, utilizing a silicon-controlled rectifier (502). The system includes the silicon controlled rectifier, which has a first p-type region (508) coupled to a voltage node (504), a first n-type region (512) having a first side adjoining the first p-type region, a second p-type region (510) having a first side adjoining a second side of the first n-type region, and a second n-type region (514) having a first side adjoining a second side of the second p-type region. A clamping structure (506) is intercoupled between the second n-type region and ground, to prevent the junction between the second p-type region and the second n-type region from retaining a forward bias. A switching structure (518) is intercoupled between the second p-type region and ground to ground the second p-type region during normal operation of the semiconductor device.

公开(公告)号：US06624481B1

公开(公告)日：2003-09-23

申请号：US10407037

申请日：2003-04-04

申请人： Sameer P. Pendharkar ,  Philip L. Hower ,  Robert Steinhoff

发明人： Sameer P. Pendharkar ,  Philip L. Hower ,  Robert Steinhoff

IPC分类号： H01L2362

CPC分类号： H01L27/0259 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： An ESD robust bipolar transistor (200) that includes first and second bipolar elements (210, 220), wherein a first trigger voltage of the first bipolar element (210) is proximate a second sustaining voltage of the second bipolar element (220). The first and second bipolar elements (210, 220) include first and second bases (214, 224), emitters (216, 226) and collectors (212, 222), respectively. The first and second bases (214, 224) are coupled and the first and second collectors (212, 222) are coupled. The ESD robust bipolar transistor (200) also includes an emitter resistor (250) and a base resistor (260), wherein the emitter resistor (250) couples the first and second emitters (216, 226) and the base resistor (260) couples the second emitter (226) and the first and second bases (214, 224).

摘要翻译： 包括第一和第二双极元件（210,220）的ESD坚固的双极晶体管（200），其中第一双极元件（210）的第一触发电压接近第二双极元件（220）的第二维持电压。 第一和第二双极元件（210,220）分别包括第一和第二基极（214,224），发射极（216,226）和集电极（212,222）。 耦合第一和第二基极（214,224），并且耦合第一和第二集电极（212,222）。 ESD稳健双极晶体管（200）还包括发射极电阻（250）和基极电阻（260），其中发射极电阻（250）将第一和第二发射极（216,226）和基极电阻（260）耦合 第二发射器（226）和第一和第二基极（214,224）。

公开(公告)号：US20050087808A1

公开(公告)日：2005-04-28

申请号：US10951968

申请日：2004-09-28

申请人： Robert Steinhoff

发明人： Robert Steinhoff

IPC分类号： H01L23/62 ,  H01L27/02 ,  H01L29/00 ,  H01L29/74

CPC分类号： H01L27/0262

摘要： The present invention provides a system for electrostatic discharge protection in a semiconductor device, utilizing a silicon-controlled rectifier (502). The system includes the silicon controlled rectifier, which has a first p-type region (508) coupled to a voltage node (504), a first n-type region (512) having a first side adjoining the first p-type region, a second p-type region (510) having a first side adjoining a second side of the first n-type region, and a second n-type region (514) having a first side adjoining a second side of the second p-type region. A clamping structure (506) is intercoupled between the second n-type region and ground, to prevent the junction between the second p-type region and the second n-type region from retaining a forward bias. A switching structure (518) is intercoupled between the second p-type region and ground to ground the second p-type region during normal operation of the semiconductor device.

摘要翻译： 本发明提供一种利用硅可控整流器（502）的半导体器件中的静电放电保护系统。 该系统包括可控硅整流器，其具有耦合到电压节点（504）的第一p型区域（508），具有邻接第一p型区域的第一侧的第一n型区域（512）， 具有邻接第一n型区域的第二侧的第一侧的第二p型区域（510）和与第二p型区域的第二侧邻接的第一侧面的第二n型区域（514）。 夹持结构（506）在第二n型区域和地之间相互配合，以防止第二p型区域和第二n型区域之间的结合保持正向偏压。 在半导体器件的正常操作期间，开关结构（518）在第二p型区域和地之间相互耦合以对准第二p型区域。

公开(公告)号：US20050083619A1

公开(公告)日：2005-04-21

申请号：US10690011

申请日：2003-10-21

申请人： Robert Steinhoff

发明人： Robert Steinhoff

IPC分类号： H01L27/02 ,  H02H9/00

CPC分类号： H01L27/0262

摘要： An ESD protection device can include a silicon-controlled rectifier (SCR) and an external pumping circuit. The external pumping circuit can be used to forward bias a junction of the SCR. The external pumping circuit can comprise a transistor that can be coupled to a region of the SCR to pump the region.

摘要翻译： ESD保护器件可以包括硅控整流器（SCR）和外部泵浦电路。 外部泵浦电路可用于将SCR的接点向前偏置。 外部泵浦电路可以包括可以耦合到SCR的区域以泵浦该区域的晶体管。

公开(公告)号：US08384127B1

公开(公告)日：2013-02-26

申请号：US09498677

申请日：2000-02-07

申请人： Robert Steinhoff ,  Jonathan S. Brodsky ,  Thomas A. Vrotsos

发明人： Robert Steinhoff ,  Jonathan S. Brodsky ,  Thomas A. Vrotsos

IPC分类号： H01L29/747

CPC分类号： H01L27/0277 ,  H01L27/0274 ,  H01L29/0692 ,  H01L29/1083 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/78

摘要： A structure is designed with an external terminal (100) and a reference terminal (102). A first transistor (106) is formed on a substrate. The first transistor has a current path coupled between the external terminal and the reference terminal. A second transistor (118) has a current path coupled between the external terminal and the substrate. A third transistor (120) has a current path coupled between the substrate and the reference terminal.

公开(公告)号：US20070008667A1

公开(公告)日：2007-01-11

申请号：US11177755

申请日：2005-07-08

申请人： Robert Steinhoff

发明人： Robert Steinhoff

IPC分类号： H02H9/00

CPC分类号： H01L27/0262 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/87

摘要： Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for which ESD protection is desired. The SCR used in the ESD cell of the invention is provided with a full guardring for shielding the SCR from triggering by fast transients. A resistor is provided at the guardring for use in triggering the SCR at the onset of an ESD event. Exemplary preferred embodiments of the invention are disclosed with silicide-block resistors within the range of about 2-1000 Ohms or less.

摘要翻译： 公开了用于使用SCR ESD单元来保护电子电路免受ESD损坏的方法和电路。 SCR电路耦合到期望ESD保护的相关微电子电路的端子。 在本发明的ESD电池中使用的SCR设置有用于屏蔽SCR不受快速瞬变触发的完整防护。 在ESD事件开始时，在防护装置处提供用于触发SCR的电阻器。 公开了本发明的示例性优选实施例，硅化物阻挡电阻在约2-1000欧姆或更小的范围内。

公开(公告)号：US20050104613A1

公开(公告)日：2005-05-19

申请号：US10870773

申请日：2004-06-17

申请人： Charvaka Duvvury ,  John Kunz ,  Robert Steinhoff

发明人： Charvaka Duvvury ,  John Kunz ,  Robert Steinhoff

IPC分类号： G01R31/00 ,  G01R31/12 ,  G01R31/14 ,  G01R31/26

CPC分类号： G01R31/002 ,  G01R31/129 ,  G01R31/14

摘要： An equipment (400) for testing semiconductor device performance under high energy pulse conditions, which comprises a high voltage generator (401) and an on/off switch relay (403). The relay is resistively connected by a first resistor (402) to the generator and by a second resistor (404) to the socket (405a) for the device-under-test (406); the relay is operable in a partially ionized ambient. A capacitor (407) is connected to the relay, to the generator, and to the device, and is operable to discharge high energy pulses through the device. A third resistor (410) is in parallel with the capacitor and the device, and is operable to suppress spurious pulses generated by the relay. This third resistor has a value between about 1 kΩ and 1 MΩ, preferably about 10 kΩ, several orders of magnitude greater than the on-resistance of the device-under-test.

摘要翻译： 一种用于在高能量脉冲条件下测试半导体器件性能的设备（400），其包括高压发生器（401）和开/关开关继电器（403）。 继电器由第一电阻器（402）通过第二电阻器（404）电阻连接到用于被测器件（406）的插座（405a）; 继电器可在部分电离的环境中操作。 电容器（407）连接到继电器，发电机和设备，并且可操作地将高能脉冲放电通过该装置。 第三电阻器（410）与电容器和器件并联，并且可操作以抑制由继电器产生的寄生脉冲。 该第三电阻器具有大约1kOmega和1Memega之间的值，优选约10kΩ，比被测器件的导通电阻大几个数量级。

公开(公告)号：US06424013B1

公开(公告)日：2002-07-23

申请号：US09586637

申请日：2000-06-05

申请人： Robert Steinhoff ,  Jonathan S. Brodsky ,  Thomas A. Vrotsos

发明人： Robert Steinhoff ,  Jonathan S. Brodsky ,  Thomas A. Vrotsos

IPC分类号： H01L2362

CPC分类号： H01L27/0277

摘要： A protection circuit is designed with an external terminal (300), a reference terminal (126) and a substrate (342). A semiconductor body (338) is formed by an isolation region (332, 340) formed between the substrate and the semiconductor body, thereby enclosing the semiconductor body. A plurality of transistors is formed in the semiconductor body. Each transistor has a respective control terminal (354) connected to a common control terminal (321) and a respective current path connected between the external terminal and the reference terminal. A capacitor (314) is connected between the semiconductor body and the external terminal. A resistor (318) is connected between the semiconductor body and the reference terminal.

摘要翻译： 保护电路设计有外部端子（300），参考端子（126）和基板（342）。 半导体本体（338）由形成在衬底和半导体本体之间的隔离区（332,340）形成，从而包围半导体本体。 在半导体本体中形成多个晶体管。 每个晶体管具有连接到公共控制端子（321）的相应控制端子（354）和连接在外部端子与参考端子之间的相应电流路径。 电容器（314）连接在半导体本体和外部端子之间。 电阻器（318）连接在半导体本体和参考端子之间。

公开(公告)号：US20050275028A1

公开(公告)日：2005-12-15

申请号：US10852967

申请日：2004-05-25

申请人： Robert Steinhoff

发明人： Robert Steinhoff

IPC分类号： H01L23/62

CPC分类号： H01L29/78 ,  H01L27/0266 ,  H01L29/4238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to electro static discharge (ESD) protection circuitry. Multiple techniques are presented to adjust one or more ends of one or more fingers of an ESD protection device so that the ends of the fingers have a reduced initial trigger or breakdown voltage as compared to other portions of the fingers, and in particular to central portions of the fingers. In this manner, most, if not all, of the adjusted ends of the fingers are likely to trigger or fire before any of the respective fingers completely enter a snapback region and begin to conduct ESD current. Consequently, the ESD current is more likely to be distributed among all or substantially all of the plurality of fingers rather than be concentrated within one or merely a few fingers. As a result, potential harm to the ESD protection device (e.g., from current crowding) is mitigated and the effectiveness of the device is improved.

摘要翻译： 本发明涉及静电放电（ESD）保护电路。 提出了多种技术来调整ESD保护装置的一个或多个手指的一个或多个端部，使得与手指的其它部分相比，指状物的端部具有减小的初始触发或击穿电压，并且特别是与中心部分 的手指。 以这种方式，大多数（如果不是全部）手指的调整的端部可能在任何相应的手指完全进入快速恢复区域并开始导通ESD电流之前触发或触发。 因此，ESD电流更可能分布在所有或基本上所有多个指状物中，而不是集中在一个或仅几个手指内。 结果，减轻了对ESD保护装置的潜在危害（例如，来自当前拥挤），并且改善了装置的有效性。