公开(公告)号：US5647917A

公开(公告)日：1997-07-15

申请号：US525423

申请日：1995-09-07

Applicant: Kazuhiko Oida ,  Ryusuke Nakai

Inventor： Kazuhiko Oida ,  Ryusuke Nakai

IPC: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205 ,  H01L29/12

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  Y10S117/902

Abstract: When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .THETA. from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle .THETA. of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle .THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality .THETA..ltoreq.1.times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle .THETA. for preventing hillocks. More precisely, the inequlity is expressed as .THETA..ltoreq.1.26.times.10.sup.-3 D.sup.1/2.

Abstract translation: 当化合物半导体膜在具有接近（100）取向的表面的InP晶片上生长时，倾向于在膜上产生小丘。 为了抑制小丘的发生，已经采用偏角晶片作为基板。 然而，来自（100）平面的偏角THETA不是确定电影上形成的小丘的唯一因素。 有一个隐藏的参数决定了小丘的产生。 在生长中的薄膜上引起小丘的缺陷是底物本身的缺陷。 没有小丘起源于对应于InP晶片的部分而没有位错的部分薄膜。 衬底的斜角THETA的作用是防止位错对膜的传输的影响。 衬底上缺陷的较小密度D允许较小的偏角THETA用于抑制小丘的产生。 缺陷的较大密度D需要较大的基板偏离角度，以防止小丘起源。 不等式THETA

公开(公告)号：US5105628A

公开(公告)日：1992-04-21

申请号：US455332

申请日：1989-12-27

Applicant: Ryusuke Nakai

Inventor： Ryusuke Nakai

IPC: H01L21/02 ,  H01L21/673

CPC classification number: H01L21/67366 ,  H01L21/67376 ,  H01L21/67386 ,  H01L21/67389 ,  H01L21/67393

Abstract: A method for storing a semiconductor substrate preserves the semiconductor substrate at a temperature not more than 10.degree. C. in a sealed manner. After the surface of the semiconductor substrate has been cleaned by etching or the like, the semiconductor substrate is put in a bag of a synthetic resin sheet. An inert gas is introduced into the bag or the bag is brought into a vacuum state, the bag is sealed, and then maintained at the above temperature, whereby the cleaned surface is not recontaminated for a prolonged period of time.

Abstract translation: PCT No.PCT / JP88 / 00404 Sec。 371日期1989年12月27日第 102（e）日期1989年12月27日PCT提交1988年4月25日PCT公布。 出版物WO89 / 日期：1989年1月12日。一种用于存储半导体衬底的方法，以密封的方式将半导体衬底保持在不高于10℃的温度。 在通过蚀刻等清洁了半导体衬底的表面之后，将半导体衬底放入合成树脂片的袋中。 将惰性气体引入袋中或将袋子置于真空状态，将袋密封，然后保持在上述温度，从而清洁表面不会被长时间再污染。