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    Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
    1.
    发明授权
    Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth 失效
    用于生长化合物半导体的外延和用于外延生长的InP衬底

    公开(公告)号：US5647917A

    公开(公告)日：1997-07-15

    申请号：US525423

    申请日：1995-09-07

    Applicant: Kazuhiko Oida ,  Ryusuke Nakai

    Inventor： Kazuhiko Oida ,  Ryusuke Nakai

    IPC: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  H01L21/205 ,  H01L29/12

    CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/40 ,  Y10S117/902

    Abstract: When compound semiconductor films are grown on an InP wafer having a surface near a (100) orientation hillocks tend to arise on the films. Off-angle wafers have been adopted for substrates in order to suppress the occurrence of hillocks. The off-angle .THETA. from a (100) plane, however, is not the sole factor for determing wheather hillocks will be formed on the film. There is a concealed parameter which determines the generation of hillocks. What induces hillocks on the growing film are the defects on the substrate itself. No hillocks originate on portions of the film that correspond to the portions of the InP wafer without dislocations. The role of the off-angle .THETA. of the substrate is preventing the influence of the dislocations from transmitting to the films. A smaller density D of the defects on the substrate allows a smaller off-angle .THETA. for suppressing the hillocks from arising. A larger density D of the defects demands a larger off-angle for the substrate so as to prevents the hillocks from originating. An inequality .THETA..ltoreq.1.times.10.sup.-3 D.sup.1/2 allows calculation of the off-angle .THETA. for preventing hillocks. More precisely, the inequlity is expressed as .THETA..ltoreq.1.26.times.10.sup.-3 D.sup.1/2.

    Abstract translation: 当化合物半导体膜在具有接近（100）取向的表面的InP晶片上生长时，倾向于在膜上产生小丘。 为了抑制小丘的发生，已经采用偏角晶片作为基板。 然而，来自（100）平面的偏角THETA不是确定电影上形成的小丘的唯一因素。 有一个隐藏的参数决定了小丘的产生。 在生长中的薄膜上引起小丘的缺陷是底物本身的缺陷。 没有小丘起源于对应于InP晶片的部分而没有位错的部分薄膜。 衬底的斜角THETA的作用是防止位错对膜的传输的影响。 衬底上缺陷的较小密度D允许较小的偏角THETA用于抑制小丘的产生。 缺陷的较大密度D需要较大的基板偏离角度，以防止小丘起源。 不等式THETA

    GaAs single crystal substrate and epitaxial wafer using the same
    5.
    发明授权
    GaAs single crystal substrate and epitaxial wafer using the same 有权
    GaAs单晶衬底和使用其的外延晶片

    公开(公告)号：US06180269B2

    公开(公告)日：2001-01-30

    申请号：US09334215

    申请日：1999-06-16

    Applicant: Yoshiaki Hagi ,  Ryusuke Nakai

    Inventor： Yoshiaki Hagi ,  Ryusuke Nakai

    IPC: B32B900

    CPC classification number: H01L21/0262 ,  C30B11/00 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  Y10T428/265

    Abstract: A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2×104 cm−2, a carbon concentration of 2.5 to 20.0×1015 cm−3, a boron concentration of 2.0 to 20.0×1016 cm−3, an impurity concentration other than carbon and boron of at most 1×1017 cm−3, an EL2 concentration of 5.0 to 10.0×1015 cm−3, resistivity of 1.0 to 5.0×108 &OHgr;·cm and a mean residual strain measured by photoelastic analysis of at most 1.0×10−5.

    Abstract translation: GaAs单晶衬底和使用其的外延晶片抑制外延层生长期间的滑移的产生，并且改善在这种衬底上制造的器件的击穿耐受特性。 GaAs单晶基板的平面位错密度为2×104cm-2以下，碳浓度为2.5〜20.0×10 15 cm -3，硼浓度为2.0〜20.0×10 16 cm -3，碳以外的杂质浓度 和至多1×10 17 cm -3的硼，EL 2浓度为5.0至10.0×10 15 cm -3，电阻率为1.0至5.0×10 8ΩEGA.cm，通过光弹性分析测量的平均残余应变为至多1.0×10 -5。

    Method of monitoring single crystal during growth
    7.
    发明授权
    Method of monitoring single crystal during growth 失效
    生长过程中监测单晶的方法

    公开(公告)号：US4634490A

    公开(公告)日：1987-01-06

    申请号：US679895

    申请日：1984-12-10

    Applicant: Masami Tatsumi ,  Shin-ichi Sawada ,  Ryusuke Nakai

    Inventor： Masami Tatsumi ,  Shin-ichi Sawada ,  Ryusuke Nakai

    IPC: C30B15/26 ,  G01N23/207

    CPC classification number: C30B15/26 ,  G01N23/207

    Abstract: Single crystal during growth is irradiated by an slitted X-ray beam and the diffracted X-ray beam from the crystal is monitored by an image amplifier with a two dimensional manner so that the diffracted X-ray can be monitored by the image amplifier even if there occurs change of the diameter of the crystal. A half portion of the single crystal during growth is irradiated by a slitted X-ray beam and the other half portion of the crystal is irradiated by the X-ray beam over the entire height of the crystal so that the Laue spots of the crystal growth is displayed on one half portion of the display of the image amplifier and a shape of the crystal being pulled up is monitored in another half portion of the display of the image amplifier.

    Abstract translation: 生长期间的单晶由切割的X射线束照射，并且来自晶体的衍射X射线束以二维方式由图像放大器监测，使得衍射的X射线可被图像放大器监测，即使 发生晶体直径的变化。 生长期间单晶的一半部分被切割的X射线束照射，并且晶体的另一半部分在晶体的整个高度上被X射线束照射，使得晶体生长的Laue斑点 被显示在图像放大器的显示器的一半部分上，并且在图像放大器的显示器的另一半部分中监视被上拉的晶体的形状。

    Method for controlling vertically arranged heaters in a crystal pulling device
    8.
    发明授权
    Method for controlling vertically arranged heaters in a crystal pulling device 失效
    用于在拉晶装置中控制垂直排列的加热器的方法

    公开(公告)号：US4556784A

    公开(公告)日：1985-12-03

    申请号：US539905

    申请日：1983-10-07

    Applicant: Ryusuke Nakai

    Inventor： Ryusuke Nakai

    IPC: C30B15/14 ,  C30B15/20 ,  C30B27/02 ,  F27B14/00

    CPC classification number: C30B15/14 ,  C30B15/20

    Abstract: In the pulling of a single crystal from a melt by the Czochralski method the temperature of the melt and the crystal is controlled by a plurality of heaters surrounding the crucible in vertically disposed relation relative to each other. The lowermost heater is controlled by an automatic temperature controller in response to the temperature of the bottom of the crucible and the remaining heaters are controlled by the selectring a specific ratio for the power supply of each of the remaining heaters with respect to the power supply of the lowermost heater.

    Abstract translation: 在通过切克劳斯基法从熔体中拉出单晶时，熔体和晶体的温度由围绕坩埚的多个加热器以彼此垂直设置的关系来控制。 最低的加热器由自动温度控制器控制，响应于坩埚底部的温度，剩余的加热器通过选择来控制每个剩余加热器的电源相对于电源的电源的特定比例 最低的加热器。

    CLEANING METHOD FOR FILTRATION MEMBRANE AND MEMBRANE FILTRATION APPARATUS
    9.
    发明申请
    CLEANING METHOD FOR FILTRATION MEMBRANE AND MEMBRANE FILTRATION APPARATUS 审中-公开
    用于过滤膜和膜过滤装置的清洁方法

    公开(公告)号：US20120074059A1

    公开(公告)日：2012-03-29

    申请号：US13242528

    申请日：2011-09-23

    Applicant: Shuji HAHAKURA ,  Hideki Kashihara ,  Satoshi Yahagi ,  Ryusuke Nakai

    Inventor： Shuji HAHAKURA ,  Hideki Kashihara ,  Satoshi Yahagi ,  Ryusuke Nakai

    IPC: B01D65/06 ,  B01D71/32 ,  B01D71/26

    CPC classification number: C02F1/44 ,  B01D65/02 ,  B01D2313/12 ,  B01D2321/04 ,  B01D2321/168 ,  B01D2321/185 ,  C02F1/441 ,  C02F1/444 ,  C02F2103/008 ,  C02F2103/08 ,  C02F2303/16

    Abstract: There is provided a cleaning method for a hydrophobic filtration membrane used for membrane filtration of water to be treated such as seawater, discharged water and ballast water including a jelly-like suspended substance and clogged with the suspended substance in the water to be treated, the filtration membrane being brought into contact with limonene-containing water, or backwashing of the filtration membrane with a cleaning liquid being done, and then, a flow having air taken therein being applied onto a surface of the filtration membrane or a water stream from an eductor nozzle being sprayed onto the filtration membrane. There is also provided a membrane filtration apparatus capable of efficiently performing the above-mentioned cleaning method.

    Abstract translation: 本发明提供一种用于对被处理水进行膜过滤的疏水性过滤膜的清洗方法，例如海水，排出水和包含果冻状悬浮物质的压载水，并将被悬浮物质堵塞在被处理水中， 过滤膜与含柠檬烯的水接触，或者用完成的清洗液对过滤膜进行反冲洗，然后将其中吸入的空气的流量施加到过滤膜的表面或来自喷射器的水流 喷嘴喷射到过滤膜上。 还提供了能够有效地进行上述清洗方法的膜过滤装置。

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