公开(公告)号：US09673303B2

公开(公告)日：2017-06-06

申请号：US14820564

申请日：2015-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Kim ,  Donghyun Kim ,  Myeongcheol Kim ,  Daeyong Kim ,  Chulsung Kim

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L29/6681 ,  H01L21/31116 ,  H01L21/76897 ,  H01L29/6656

Abstract: Provided are a semiconductor device and a fabrication method thereof. The semiconductor device may include a fin-shaped active pattern and a gate electrode provided on a substrate, first and second spacers provided on a sidewall of the gate electrode, impurity regions provided at both sides of the gate electrode, a contact plug electrically connected to one of the impurity regions, and a third spacer enclosing the contact plug and having a top surface positioned at substantially the same level as a top surface of the contact plug.