公开(公告)号：US09673303B2

公开(公告)日：2017-06-06

申请号：US14820564

申请日：2015-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol Kim ,  Donghyun Kim ,  Myeongcheol Kim ,  Daeyong Kim ,  Chulsung Kim

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L29/6681 ,  H01L21/31116 ,  H01L21/76897 ,  H01L29/6656

Abstract: Provided are a semiconductor device and a fabrication method thereof. The semiconductor device may include a fin-shaped active pattern and a gate electrode provided on a substrate, first and second spacers provided on a sidewall of the gate electrode, impurity regions provided at both sides of the gate electrode, a contact plug electrically connected to one of the impurity regions, and a third spacer enclosing the contact plug and having a top surface positioned at substantially the same level as a top surface of the contact plug.

公开(公告)号：US11133392B2

公开(公告)日：2021-09-28

申请号：US16243564

申请日：2019-01-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoseok Choi ,  Hwichan Jun ,  Yoonhae Kim ,  Chulsung Kim ,  Heungsik Park ,  Doo-Young Lee

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/66

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

公开(公告)号：US20240274677A1

公开(公告)日：2024-08-15

申请号：US18370249

申请日：2023-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gunho Jo ,  Chulsung Kim ,  Bomi Kim ,  Heesub Kim ,  Eunho Cho

IPC: H01L29/417 ,  H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L23/481 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes fin-type active regions protruding from a substrate and extending lengthwise in a first horizontal direction, source/drain regions respectively arranged on the fin-type active regions, a device isolation film covering both sidewalls of each fin-type active region, an insulating structure covering the source/drain regions and the device isolation film, source/drain contacts respectively arranged on and connected to the source/drain regions and apart from each other in a second horizontal direction perpendicular to the first horizontal direction, and a contact isolation insulating film arranged between the source/drain contacts in the second horizontal direction and having a lower surface closer to the substrate than a lower surface of each source/drain contact. At least one of the source/drain contacts includes a first portion extending in a vertical direction toward the substrate along a surface of the contact isolation insulating film.

公开(公告)号：US10199471B2

公开(公告)日：2019-02-05

申请号：US15059519

申请日：2016-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyoseok Choi ,  Hwichan Jun ,  Yoonhae Kim ,  Chulsung Kim ,  Heungsik Park ,  Doo-Young Lee

IPC: H01L29/417 ,  H01L29/78 ,  H01L29/66

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.