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11.
公开(公告)号:US10937970B2
公开(公告)日:2021-03-02
申请号:US16176422
申请日:2018-10-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taejin Choi , Sang Mo Kim , Sung Young Yun , Youn Hee Lim , Katsunori Shibata , Hiromasa Shibuya , Gae Hwang Lee , Norihito Ishii , Dong-Seok Leem , Yong Wan Jin , Yeong Suk Choi , Jong Won Choi , Hyesung Choi
IPC: H01L51/00 , H01L27/30 , C07D293/10 , C07D421/04 , C07C225/22 , C07D333/46 , H01L51/44 , H01L51/42
Abstract: A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
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公开(公告)号:US20200373356A1
公开(公告)日:2020-11-26
申请号:US16596265
申请日:2019-10-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung Jun PARK , Kyng Bae Park , Sung Young Yun , Gae Hwang Lee , Seon-Jeong Lim , Yong Wan Jin
IPC: H01L27/30 , H01L51/42 , H04B10/114 , H04B10/66 , H04B10/50
Abstract: An optical wireless communication system includes an optical wireless transmitter configured to emit a discrete-time signal of first light, second light, and third light having different wavelength spectra; and a light-receiving sensor including an optical wireless receiver including first, second, and third photoelectric conversion devices configured to convert discrete-time signals of the first, second, and third light beams into first, second, and third photoelectric conversion signals, respectively, wherein the second photoelectric conversion device at least partially overlaps the first photoelectric conversion device, and the third photoelectric conversion device at least partially overlaps at least one photoelectric conversion device of the first photoelectric conversion device or the second photoelectric conversion device, and at least one photoelectric conversion device of the first photoelectric conversion device, the second photoelectric conversion device, or the third photoelectric conversion device includes an organic light absorbing material, a quantum dot, or a combination thereof.
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公开(公告)号:US10734593B2
公开(公告)日:2020-08-04
申请号:US16249055
申请日:2019-01-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ryuichi Satoh , Kyusik Kim , Kyung Bae Park , Yong Wan Jin , Chuljoon Heo
Abstract: An organic electronic device includes an organic device including an organic material, a first protective film on the organic device, a second protective film on the first protective film and including a same material as the first protective film, and a third protective film on the second protective film.
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公开(公告)号:US10457694B2
公开(公告)日:2019-10-29
申请号:US15850317
申请日:2017-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Moon Gyu Han , Seon-Jeong Lim , Takkyun Ro , Kwang Hee Lee , Dong-Seok Leem , Yong Wan Jin , Kyung Bae Park , Sung Young Yun , Gae Hwang Lee , Chul Joon Heo
Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.
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公开(公告)号:US20190214591A1
公开(公告)日:2019-07-11
申请号:US16178692
申请日:2018-11-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung Bae PARK , Chul Joon Heo , Moon Gyu Han , Yong Wan Jin
CPC classification number: H01L51/4213 , H01L27/14621 , H01L27/307 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0077 , H01L51/0078 , H01L51/0091 , H01L51/4253 , H01L51/441 , H01L2251/552
Abstract: A photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode and configured to convert light in a particular wavelength spectrum of light of a visible wavelength spectrum of light into an electric signal. The photoelectric conversion layer may include a p-type semiconductor configured to selectively absorb light in a first wavelength spectrum and an n-type semiconductor having a peak absorption wavelength in a second wavelength spectrum of greater than or equal to about 750 nm, an image sensor. The photoelectric conversion layer may include a first semiconductor of an absorption spectrum of a first peak absorption wavelength, and a second semiconductor of an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by at least about 100 nm.
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公开(公告)号:US10186544B2
公开(公告)日:2019-01-22
申请号:US15283698
申请日:2016-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang Lee , Kwang Hee Lee , Kyu Sik Kim , Sung Young Yun , Dong-Seok Leem , Yong Wan Jin
IPC: H01L31/00 , H01L27/146
Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.
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17.
公开(公告)号:US20180282303A1
公开(公告)日:2018-10-04
申请号:US15934069
申请日:2018-03-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Moon Gyu Han , Kyung Bae Park , Dongseon Lee , Yong Wan Jin , Chul Joon Heo
IPC: C07D401/14 , C07D401/04 , C07D403/04 , C07C211/54 , C09B57/00 , G02B5/20 , H04N5/225
Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.
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公开(公告)号:US10084018B2
公开(公告)日:2018-09-25
申请号:US15374550
申请日:2016-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang Lee , Kwang Hee Lee , Dong-Seok Leem , Yong Wan Jin
IPC: H01L27/30 , H01L51/44 , H01L27/146
CPC classification number: H01L27/307 , H01L27/14625 , H01L27/14632 , H01L27/14647 , H01L51/441
Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.
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公开(公告)号:US09871079B2
公开(公告)日:2018-01-16
申请号:US14657133
申请日:2015-03-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang Lee , Kwang Hee Lee , Dong-Seok Leem , Yong Wan Jin
CPC classification number: H01L27/307 , H01L51/442 , H01L2251/305 , H01L2251/306 , H01L2251/308 , Y02E10/549
Abstract: An image sensor includes a semiconductor substrate integrated with at least a photo-sensing device, a plurality of first electrodes disposed on the semiconductor substrate, an organic photoelectric conversion layer disposed on the first electrodes, and a second electrode disposed on the organic photoelectric conversion layer. The first electrodes include a light-transmitting electrode and a metal layer interposed between the semiconductor substrate and the light-transmitting electrode. The organic photoelectric conversion layer disposed on the first electrodes and the photo-sensing device absorb and/or sense light in different wavelength regions from each other. An electronic device including the image sensor is also provided.
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公开(公告)号:US09786847B2
公开(公告)日:2017-10-10
申请号:US14942562
申请日:2015-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seon-Jeong Lim , Sung Young Yun , Takkyun Ro , Yong Wan Jin
IPC: C07D421/06 , C07D409/06 , H01L27/30 , H01L51/00 , H01L51/42
CPC classification number: H01L51/0061 , C07D409/06 , C07D421/06 , H01L27/307 , H01L51/006 , H01L51/0062 , H01L51/0067 , H01L51/0068 , H01L51/4253
Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device include the same.
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