公开(公告)号：US20170247794A1

公开(公告)日：2017-08-31

申请号：US15219571

申请日：2016-07-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yusuke MUKAE ,  Fumitaka AMANO ,  Naoki TAKEGUCHI

IPC: C23C16/455

CPC classification number: C23C16/45529 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/042 ,  C23C28/42

Abstract: A process chamber includes multiple partitions within a single continuous vacuum enclosure. Each of the multiple partitions is defined by respective distinct volumes within the single continuous vacuum enclosure that are connected thereamongst for unhindered movement of a substrate therethrough. The multiple partitions are configured to provide different process gases or purge gases to the substrate as the substrate cycles through the multiple positions. The process can cycle through a first deposition step that deposits a first material on the substrate in a first position and a second deposition step that deposits a second material on the substrate in a second position within each cycle. Alternatively or additionally, the process spaces can include at least one precursor treatment space and at least one reaction space.