公开(公告)号：US20170155386A1

公开(公告)日：2017-06-01

申请号：US14955008

申请日：2015-11-30

Applicant: Silicon Laboratories Inc.

Inventor： Gang Yuan ,  Shouli Yan ,  Matthew Powell

IPC: H03K17/687 ,  H03F3/45 ,  H03F1/02

CPC classification number: H03K17/687 ,  H03F1/0205 ,  H03F3/45179 ,  H03F3/45278 ,  H03F3/45726 ,  H03F3/45892 ,  H03F2203/45038 ,  H03F2203/45212 ,  H03F2203/45696 ,  H03F2203/45726

Abstract: An apparatus includes a first field effect transistor (FET) that has a body and is coupled in a circuit. The apparatus also includes a second FET that has a body and is coupled in the circuit. The circuit has an offset because of a mismatch. The apparatus further includes an offset correction circuit coupled to the body of the first FET and to the body of the second FET. The offset correction circuit provides a first offset correction signal to the body of the first FET and provides a second offset correction signal to the body of the second FET.

公开(公告)号：US20170133931A1

公开(公告)日：2017-05-11

申请号：US14933285

申请日：2015-11-05

Applicant: SILICON LABORATORIES INC.

Inventor： Mohamed Mostafa Elsayed ,  Kenneth W. Fernald ,  Matthew Powell

IPC: H02M3/158

CPC classification number: H02M3/158 ,  H02M2001/0029

Abstract: A technique includes switching a supply rail from receiving a first voltage to receiving a second voltage; and regulating a slew rate associated with the switching.