公开(公告)号：US11251265B2

公开(公告)日：2022-02-15

申请号：US16080279

申请日：2017-02-23

Applicant: Centre National de la Recherche Scientifique ,  Universite Claude Bernard Lyon 1 ,  Soitec

Inventor： Christophe Figuet ,  Oleg Kononchuk ,  Kassam Alassaad ,  Gabriel Ferro ,  Véronique Souliere ,  Christelle Veytizou ,  Taguhi Yeghoyan

IPC: H01L29/06 ,  H01L21/02 ,  H01L21/762 ,  H01L29/16

Abstract: A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main layer and, interposed in the main layer or between the main layer and the base substrate, at least one intermediate polycrystalline layer composed of a silicon and carbon alloy or carbon. The intermediate layer has a resistivity greater than 1000 ohm·cm.

公开(公告)号：US20170331501A1

公开(公告)日：2017-11-16

申请号：US15531976

申请日：2015-09-17

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Didier Landru ,  Christophe Figuet

IPC: H04B1/03 ,  H01M4/66 ,  H01L21/02 ,  H01L21/762 ,  H01L41/047 ,  H01L21/28

CPC classification number: H04B1/03 ,  H01L21/02167 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28282 ,  H01L21/76254 ,  H01L21/76297 ,  H01L41/0477 ,  H01M4/663

Abstract: A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower 10,000 ohm·cm over a temperature range extending from −20° C. to 120° C.

公开(公告)号：US20160368259A1

公开(公告)日：2016-12-22

申请号：US15256265

申请日：2016-09-02

Applicant: Soitec

Inventor： Didier Landru ,  Christophe Figuet

IPC: B32B43/00 ,  H01L21/683 ,  H01L21/762

CPC classification number: B32B43/006 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.

公开(公告)号：US09437473B2

公开(公告)日：2016-09-06

申请号：US14424311

申请日：2013-09-04

Applicant: Soitec

Inventor： Didier Landru ,  Christophe Figuet

IPC: H01L21/30 ,  H01L21/762 ,  H01L21/20 ,  H01L21/67 ,  H01L21/683

CPC classification number: B32B43/006 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.

Abstract translation: 沿着所述接口之一分离包括至少两个分离界面的至少两个基板的方法包括在将所述基板之间插入刀片之前损坏所选择的一个界面的外围区域的至少一部分，然后将所述刀片 并且部分地分离基底，并且在叶片保持插入其间的同时在分离的基底之间的空间中施加流体，并且通过涉及破坏界面处的硅氧烷键的应力腐蚀来降低所选界面的断裂能。

公开(公告)号：US20150221544A1

公开(公告)日：2015-08-06

申请号：US14424311

申请日：2013-09-04

Applicant: Soitec

Inventor： Didier Landru ,  Christophe Figuet

IPC: H01L21/762

CPC classification number: B32B43/006 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/76251 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A process for separating at least two substrates comprising at least two separation interfaces along one of the interfaces includes, before inserting a blade between the substrate, damaging at least one portion of a peripheral region of a chosen one of the interfaces, then inserting the blade and partially parting the substrates, and applying a fluid in a space between the parted substrates while the blade remains inserted therebetween, and decreasing a rupture energy of the chosen interface by stress corrosion involving breaking of siloxane bonds present at the interface.

Abstract translation: 沿着所述接口之一分离包括至少两个分离界面的至少两个基板的方法包括在将所述基板之间插入刀片之前损坏所选择的一个界面的外围区域的至少一部分，然后将所述刀片 并且部分地分离基底，并且在叶片保持插入其间的同时在分离的基底之间的空间中施加流体，并且通过涉及破坏界面处的硅氧烷键的应力腐蚀来降低所选界面的断裂能。