公开(公告)号：US20150237272A1

公开(公告)日：2015-08-20

申请号：US14703213

申请日：2015-05-04

Applicant: Sony Corporation

Inventor： Yusuke Oike ,  Yorito Sakano ,  Keiji Mabuchi

IPC: H04N5/353 ,  H04N5/369

CPC classification number: H04N5/3535 ,  H01L27/14612 ,  H01L27/14656 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/3698 ,  H04N5/37452

Abstract: A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.

Abstract translation: CMOS图像传感器具有作为单位像素的矩阵的图像阵列，每个单元像素至少包括光电二极管，用于保持存储在光电二极管中的电荷的存储器，用于将存储器中的电荷转换为电压的浮动扩散区域，第一转移 用于将电荷从光电二极管转移到存储器的栅极，用于将电荷从存储器传送到浮动扩散区域的第二传输栅极，以及用于复位浮置扩散区域中的电荷的复位晶体管。 驱动单位像素以将存储器和浮动扩散区域之间的边界处的势垒的电势设置为电位，使得当第一传输门被导通时，溢出存储器的电荷被传送到浮动扩散区域 。 CMOS图像传感器以全局快门模式运行，用于捕获运动图像。

公开(公告)号：US20150041871A1

公开(公告)日：2015-02-12

申请号：US14492335

申请日：2014-09-22

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Takashi Abe ,  Keiji Mabuchi ,  Ryoji Suzuki ,  Hiroyuki Mori ,  Yoshiharu Kudoh ,  Fumihiko Koga ,  Takeshi Yanagita ,  Kazunobu Ota

IPC: H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/2176 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

Abstract: A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode.

Abstract translation: 提供了一种固态成像装置，其包括：光电二极管，其具有为每个像素分割形成的第一导电类型半导体区域; 在与所述光电二极管相邻的区域经由栅极绝缘层在所述半导体衬底上形成的第一导电型转移栅电极，以及发射并累积在所述光电二极管中的信号电荷; 读取对应于信号电荷或信号电荷的电压的信号读取单元; 以及反射层感应电极，其在覆盖所述光电二极管的一部分或全部的区域中，经由所述栅极绝缘层在所述半导体衬底上形成，并且由具有功函数的导体或半导体构成。 通过反转层感应电极在半导体区域的反型层感应电极侧的表面上积累第二导电型载体而形成反转层。

公开(公告)号：US20140077059A1

公开(公告)日：2014-03-20

申请号：US13969097

申请日：2013-08-16

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H04N5/378

CPC classification number: H04N5/378 ,  H04N5/35518 ,  H04N5/3745

Abstract: There is provided a solid state imaging device including a photoelectric conversion unit that performs photoelectric conversion of converting incident light into charges and accumulates the charges, a charge-voltage conversion unit that converts the charges which have been subjected to the photoelectric conversion by the photoelectric conversion unit into a voltage, a charge transfer unit that transfers charges to the charge-voltage conversion unit, a charge reset unit that resets charges of the charge-voltage conversion unit, and a driving unit that performs driving such that a potential of a drain of the charge reset unit is controlled so that the charges are accumulated in the photoelectric conversion unit and the charge-voltage conversion unit up to a saturation level, and then the photoelectric conversion unit is subject to light exposure.

Abstract translation: 提供了一种固态成像装置，其包括光电转换单元，该光电转换单元执行将入射光转换成电荷并积累电荷的光电转换;电荷 - 电压转换单元，其通过光电转换转换经过光电转换的电荷 单元转换为电压，将电荷转移到充电电压转换单元的电荷转移单元，重置充电电压转换单元的电荷的电荷重置单元和执行驱动的驱动单元，使得漏极的电位 控制电荷重置单元，使电荷累积在光电转换单元和电荷 - 电压转换单元中达到饱和水平，然后光电转换单元进行曝光。

公开(公告)号：US11322534B2

公开(公告)日：2022-05-03

申请号：US17102238

申请日：2020-11-23

Applicant: SONY CORPORATION

Inventor： Masaaki Takizawa ,  Yasushi Tateshita ,  Takahiro Toyoshima ,  Takuya Toyofuku ,  Yorito Sakano ,  Motonobu Torii

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/3745

Abstract: The present disclosure relates to a solid-state imaging device and an electronic apparatus which allow reduction of optical crosstalk. In an example of FIG. 5B, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. In an example of FIG. 5C, a charge storage unit is formed by a method in which a hole is bored in a substrate, a diffusion layer is formed in a half (one side) of a surface of the hole, and an insulating film and an upper electrode are formed so as to fill the hole. The present disclosure can be applied to a CMOS solid-state imaging device used for an imaging apparatus such as a camera, for example.

公开(公告)号：US10609318B2

公开(公告)日：2020-03-31

申请号：US15522119

申请日：2015-10-23

Applicant: SONY CORPORATION

Inventor： Masaki Sakakibara ,  Yorito Sakano

IPC: H04N5/378 ,  H04N5/3745 ,  H04N5/355 ,  H04N5/374 ,  H01L27/146

Abstract: The present technology relates to an imaging device, a driving method, and an electronic apparatus capable of more quickly acquiring a high-quality image. In a pixel of a solid-state imaging device, a photoelectric conversion unit that performs a photoelectric conversion of incident light is disposed. An electric charge/voltage converting unit converts electric charge acquired by the photoelectric conversion unit into a voltage signal. A signal comparator compares a supplied reference signal with the voltage signal acquired by the electric charge/voltage converting unit and outputs a result of the comparison. A storage unit adaptively changes the conversion efficiency of the electric charge/voltage converting unit on the basis of a control signal acquired on the basis of a result of the comparison output from the signal comparator. The present technology can be applied to a solid-state imaging device.

公开(公告)号：US09769406B2

公开(公告)日：2017-09-19

申请号：US14781338

申请日：2014-03-26

Applicant: SONY CORPORATION

Inventor： Yorito Sakano

IPC: H04N5/335 ,  H04N5/228 ,  H04N5/374 ,  H01L27/146 ,  H04N5/361 ,  H04N5/3745

CPC classification number: H04N5/3742 ,  H01L27/14609 ,  H04N5/361 ,  H04N5/37452

Abstract: A photoelectric conversion element that generates charges according to a light quantity of incident light and accumulates the charges in the inside thereof, a transfer transistor (TRG) that transfers the charges accumulated by the photoelectric conversion element, a first charge voltage conversion section that converts the charges transferred by the transfer transistor (TRG) into a voltage, and a substrate electrode of a MOS capacitor (a region of a second charge voltage conversion section facing a gate electrode) that connects the first charge voltage conversion section via a connection transistor (FDG). The gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the first charge voltage conversion section and in a period other than the read period. The present disclosure can also be applied to a CMOS image sensor or the like.

公开(公告)号：US20160260757A1

公开(公告)日：2016-09-08

申请号：US15135749

申请日：2016-04-22

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/335 ,  H04N5/359 ,  H04N5/37452 ,  H04N5/37457

Abstract: There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s).

公开(公告)号：US09117728B2

公开(公告)日：2015-08-25

申请号：US14272335

申请日：2014-05-07

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Keiji Mabuchi

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1464

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate.

Abstract translation: 固态成像装置包括多个光电转换单元，被配置为接收光并产生信号电荷，所述多个光电转换单元以与半导体基板的像素区域中的多个像素对应的方式设置 ; 以及被配置为将由光电转换单元生成的信号电荷作为电信号输出的像素晶体管。 每个像素晶体管至少包括传输晶体管，其将在光电转换单元中产生的信号电荷传送到对应于漏极的浮动扩散。 转移晶体管的栅电极以从沟道形成区域到在半导体衬底的表面上形成光电转换单元的部分之间的栅极绝缘膜延伸的方式形成。

公开(公告)号：US20140084143A1

公开(公告)日：2014-03-27

申请号：US14119271

申请日：2012-07-05

Applicant: Sony Corporation

Inventor： Yorito Sakano ,  Keiji Mabuchi ,  Takashi Machida

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/14689 ,  H04N5/353 ,  H04N5/3559 ,  H04N5/3591 ,  H04N5/37452

Abstract: A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.

Abstract translation: 固态成像装置包括被配置为产生光电荷的光电转换部分和将光电荷转移到半导体区域的传输门。 用于驱动单位像素的方法包括在光电转换部分中累积光电荷的步骤和在半导体区域中积累光电荷的步骤。 形成固态成像装置的方法包括通过掩模中的开口将离子注入阱层，通过另一掩模中的开口将额外的离子注入到阱层中，并通过其中的开口将其它离子注入到阱层中 又一个面具。 电子设备包括固态成像装置。

公开(公告)号：US20140077058A1

公开(公告)日：2014-03-20

申请号：US13961616

申请日：2013-08-07

Applicant: Sony Corporation

Inventor： Yorito Sakano

IPC: H01L27/146

CPC classification number: H01L27/14601 ,  H01L27/14612 ,  H01L27/14616 ,  H04N5/3559 ,  H04N5/37452

Abstract: There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region.

Abstract translation: 提供一种固态图像传感器，其包括多个单位像素，每个单位像素包括产生与入射光量相对应的电荷并在其中积累电荷的光电变换器，转移积累在光电变换器中的电荷的第一传输门， 电荷保持区域，传送电荷的第二传输栅极，保持电荷的浮动扩散区域作为信号被读出，电荷放电栅极将电荷转移到电荷放电部分，以及结构 包括形成在光电变换器和电荷保持区域之间的边界部分中的溢流路径。