公开(公告)号：USD720310S1

公开(公告)日：2014-12-30

申请号：US29439581

申请日：2012-12-12

Applicant: Soraa, Inc.

Designer： Rajat Sharma ,  Andrew Felker

公开(公告)号：US20130270516A1

公开(公告)日：2013-10-17

申请号：US13623788

申请日：2012-09-20

Applicant: Soraa, Inc.

Inventor： Mark P. D'Evelyn ,  Rajat Sharma ,  Eric M. Hall ,  Daniel F. Feezell

IPC: H01L33/50 ,  H01L33/32

CPC classification number: H01L33/50 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L33/505 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.

Abstract translation: 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。