公开(公告)号：US10186841B1

公开(公告)日：2019-01-22

申请号：US15887217

申请日：2018-02-02

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/30 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32

Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

公开(公告)号：US09590392B1

公开(公告)日：2017-03-07

申请号：US14883137

申请日：2015-10-14

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  You-Da Lin ,  Christiane Elsass

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343 ,  H01S5/32

CPC classification number: H01S5/34333 ,  H01L21/0274 ,  H01L21/042 ,  H01L21/28123 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/469 ,  H01L21/4828 ,  H01L33/08 ,  H01L33/16 ,  H01L41/332 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3214 ,  H01S5/3216 ,  H01S5/3401

Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

Abstract translation: 光学装置包括含镓和氮的衬底，其包括以（20-2-1）取向配置的表面区域，（30-3-1）取向或（30-31）取向，在+/- 10 朝向朝向c平面和/或a平面的角度。 还公开了具有超过表面区域的量子阱区的光学器件。

公开(公告)号：US09502859B1

公开(公告)日：2016-11-22

申请号：US14593259

申请日：2015-01-09

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

IPC: H01S5/343 ,  H01S5/323 ,  H01S5/32 ,  H01S5/22 ,  H01S5/30 ,  H01S5/042

CPC classification number: H01S5/3202 ,  H01S5/0422 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/34386 ,  H01S2301/173

Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

公开(公告)号：US08971370B1

公开(公告)日：2015-03-03

申请号：US13651291

申请日：2012-10-12

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  You-Da Lin ,  Christiane Elsass

IPC: H01S5/00 ,  H01S5/343

CPC classification number: H01S5/34333 ,  H01L21/0274 ,  H01L21/042 ,  H01L21/28123 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/469 ,  H01L21/4828 ,  H01L33/08 ,  H01L33/16 ,  H01L41/332 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3214 ,  H01S5/3216 ,  H01S5/3401

Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.